PTP88N07/PTY88N07
65V/88A N-Chnnel MOSFET
Features
D
65V/88A
RDS(ON)=7.0m @ VGS=10V
◀
Lead free and Green Device Available
Low Rds-on to Minimize Conductive Loss
High avalanche Current
100% Avalanche Tested
G
S
D
Application
Power Supply
DC-DC Converters
UPS
Battery Manageme
ent System
G
TO-220
S
TO-263
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
S
VDSS
VGSS
ID3
IDP4
EAS5
PD
TJ, TSTG
Parame
eter
D
Drain-to-Source Voltag
ge
G
Gate-to-Sou
urce Voltage
e
C
Continuous Drain Curre
ent
P
Pulsed Drain Current
A
Avalanche energy
e
M
Maximum Power
P
Dissip
pation
JJunction & Storage
S
Tem
mperature R
Range
TC=25°C
C
TC=100°°C
TC=25°C
C
TC=25°C
C
Maximum
m
Unitt
65
±25
88
70
352
288
174
-55~175
V
V
mJ
W
°C
Typical
Unit
0.72
62.5
℃/W
A
Thermal Characteristics
Symbol
Rθ jc
Rθja
Parameter
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
- 1-
2018-6-12
PTP88N07/PTY88N07
65V/88A N-Chnnel MOSFET
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(on)1
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-Resistance
Test Conditions
Min.
Typ
Max. Unit
VGS=0V,ID=250uA
VDS=65V,VGS=0V
TJ=125°C
VDS=VGS,ID=250uA
65
—
—
2
—
—
—
3
—
1
100
4
VGS=±25V, VDS=0V
VGS=10V, ID=40A
—
—
—
—
7
—
±100
7.8
—
ISD=40A,VGS=0V
—
—
—
—
—
—
50
90
1.3
—
—
—
—
—
—
—
3000
430
250
17
15
62
32
—
—
—
—
—
—
—
—
—
—
76
14
25
—
—
—
V
uA
V
nA
mΩ
Diode Characteristics
VSD1
IS3
trr
Qrr
Diode Forward Voltage
Diode Continuous Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Dynamic Characteristics2
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Gate Charge Characteristics2
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
IF=40A,
dI/dt=100A/us
VGS=0V, VDS=30V
Frequency=1MHz
VDD=30V,ID=40A,
VGS=10V,RG=6Ω
VDS=30V,VGS=10V
ID=40A
80
—
—
V
A
nS
nC
pF
nS
nC
Note: 1: Pulse test; pulse width ≦ 300us, duty cycle ≦ 2%.
2: Guaranteed by design, not subject to production testing.
3: Package limitation current is 55A.Calculated continuous current based on maximum allowable junction temperature.
4: Repetitive rating, pulse width limited by max junction temperature.
5: Starting TJ = 25°C,L = 1mH,IAS = 24A.
- 2-
2018-6-12
PTP88N07/PTY88N07
65V/88A N-Chnnel MOSFET
Typical Operating Characteristics
- 3-
2018-6-12
PTP88N07/PTY88N07
65V/88A N-Chnnel MOSFET
Typical Operating Characteristics
- 4-
2018-6-12
PTP88N07/PTY88N07
65V/88A N-Chnnel MOSFET
Typical Operating Characteristics
- 5-
2018-6-12
PTP88N07/PTY88N07
65V/88A N-Chnnel MOSFET
Test Circuit
1) EAS test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
- 6-
2018-6-12
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