LSGE10R042

LSGE10R042 Lonten N-channel 100V, 145A, 4.35mΩ Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS effect transistors are using shielded gate trench RDS(on).max@ VGS=10V 4.35mΩ DMOS technology. This advanced technology has ID 145A 100V been especially tailored to minimize on-state resistance,provide superior switching performance, Pin Configuration and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features  100V,145A,RDS(on).max=4.35mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green device available TO-263 D Applications  Motor Drives  UPS  DC-DC Converter G Pb S N-Channel MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter Symbol Value Unit 100 V 145 A 92 A IDM 480 A Gate-Source voltage VGSS ±20 V Avalanche energy EAS 272 mJ Power Dissipation PD 156 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Drain-Source Voltage Continuous drain current VDSS ( TC = 25°C ) ( TC = 100°C ) Pulsed drain current 1) 2) ID Thermal Characteristics Value Unit Thermal Resistance, Junction-to-Case Parameter RθJC Symbol 0.8 °C/W Thermal Resistance, Junction-to-Ambient 3) RθJA 75 °C/W Package Marking and Ordering Information Device Device Package Marking Units/Reel LSGE10R042 TO-263 LSGE10R042 800 Version 1.1,Dec-2020 1 www.lonten.cc Electrical Characteristics Parameter LSGE10R042 TJ = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=250uA 100 --- --- V Gate threshold voltage VGS(th) VDS=VGS, ID=250uA 2.0 --- 4.0 V Drain-source leakage current IDSS VDS=100 V, VGS=0 V, TJ = 25°C --- --- 1 μA VDS=100V, VGS=0 V, TJ = 150°C --- --- 100 μA Gate leakage current, Forward IGSSF VGS=20 V, VDS=0 V --- --- 100 nA Gate leakage current, Reverse IGSSR VGS=-20V, VDS=0 V --- --- -100 nA TJ = 25°C --- 4.0 4.35 mΩ TJ = 150°C --- 7.2 --- VDS =20V , ID=40A --- 120 --- --- 3838 --- --- 1252 --- --- 13.4 --- --- 29.4 --- --- 29.2 --- --- 80.2 --- --- 30.8 --- --- 2.0 --- --- 20.5 --- --- 16 --- --- 65 --- --- 5.5 --- V --- 138 --- nC VGS=10 V, ID=40 A, Drain-source on-state resistance Forward transconductance RDS(on) gfs S Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Gate resistance Rg VDS = 50V, VGS = 0 V, f = 250kHz VDD = 40V,VGS=15V, ID =60 A VGS=0V, VDS=0V, f=1MHz pF ns Ω Gate charge characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg Gate plateau voltage Vplateau Output Charge Qoss VDS=80 V, ID=80A, VGS= 10 V VDS=80 V,VGS= 0V nC Drain-Source diode characteristics and Maximum Ratings Continuous Source Current IS --- --- 111 A Pulsed Source Current ISM --- --- 444 A Diode Forward Voltage VSD --- --- 1.4 V Reverse Recovery Time trr --- 55.6 --- ns Reverse Recovery Charge Qrr --- 233 --- nC VGS=0V, IS=80A, TJ=25℃ IS=80A, di/dt=100A/us, TJ=25℃ Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature. 2: VDD=50V, VGS=10V, L=0.5mH, IAS=33A, RG=25Ω, Starting TJ=25℃. 3: The value of RthJA is measured by placing the device in a still air box which is one cubic foot. Version 1.1,Dec-2020 2 www.lonten.cc LSGE10R042 Electrical Characteristics Diagrams Figure 1. Typ. Output Characteristics Figure 2. Transfer Characteristics 60 150 VGS=6V 140 130 50 120 VGS=7V.8V.10V 110 From bottom to top 100 ID(A) 90 ID(A) 40 VGS=5.5V 80 70 60 20 50 VGS=5V 40 30 25C 10 20 VGS=4.5V 10 0 C 30 0 1 2 VDS(V) 3 4 0 3.0 5 4.5 5.0 Figure 4.On-Resistance vs.Temperature TJ=25C RDS(ON)(normalized) VGS=6V 6 RDS(ON)(m) 4.0 VGS(V) Figure 3. On-Resistance vs.Drain Current 7 3.5 5 VGS=10V 4 1.7 VGS=10V 1.6 Pulse test ID=80A 1.5 1.4 1.3 1.2 1.1 1.0 3 0 10 20 30 40 50 60 70 0.9 20 80 40 ID(A) Figure 5.Breakdown Voltage vs.Temperature 1.05 VGS=0V 1.00 Pulse test 0.95 VTH(normalized) BVDSS(normalized) 1.03 1.02 0.70 I =250A D 80 100 120 140 Pulse test 0.65 20 40 160 TJ-Junction temperature(C) Version 1.1,Dec-2020 140 160 0.80 1.00 60 120 0.85 0.75 40 100 0.90 1.01 20 80 Figure 6.Threshold Voltage vs.Temperature ID=250A 1.04 60 TJ-Junction temperature(C) 60 80 100 120 140 160 TJ-Junction temperature(C) 3 www.lonten.cc LSGE10R042 Figure 7.Rds(on) vs. Gate Voltage Figure 8.Body-Diode Characteristics 50 100 ID=80A IS-Diode current(A) RDS(ON)(m) 40 30 20 150C 10 25C 1 150C 10 25C 0 4 5 6 7 VGS(V) 8 9 0.1 0.0 10 0.4 10 1.0 1.2 ID=80A Ciss 8 Capacitance(pF) 0.8 Figure 10.Gate Charge Characteristics 20%BV 1000 VGS(V) Coss 100 80%BV 6 4 10 1 Crss 2 f=250kHZ, VGS=0V 0 20 40 60 80 0 100 Drain-source voltage VDS(V) 0 10 20 30 40 50 60 70 Qg(nC) Figure 11.Drain Current Derating Figure 12.Power Dissipation vs.Temperature 160 180 140 160 120 140 120 PD(W) 100 ID(A) 0.6 VSD-Diode forward voltage(V) Figure 9.Capacitance Characteristics 10000 0.2 80 60 100 80 60 40 40 20 0 20 0 20 40 60 80 100 120 140 0 160 Case temperature(C) Version 1.1,Dec-2020 0 20 40 60 80 100 120 140 160 Case temperature(C) 4 www.lonten.cc LSGE10R042 Figure 14. Normalized Maximum Transient Thermal Impedance (RthJC) Transient Thermal Resistance ZJC(normalized) 1 0.7 0.5 0.3 0.1 0.1 0.05 0.01 RθJC =0.8℃/W 0.02 0.01 single pulse 1E-3 PD Ton 1E-4 1E-6 1E-5 1E-4 1E-3 0.01 T 0.1 t,Time (s) Version 1.1,Dec-2020 5 www.lonten.cc LSGE10R042 Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveform Diode Recovery Test Circuit & Waveform Version 1.1,Dec-2020 6 www.lonten.cc LSGE10R042 Mechanical Dimensions for TO-263 DIMENSIONS IN MILLITMETERS SYMBOL MIN MAX MIN MAX A 4.36 4.8 0.172 0.189 A1 1.19 1.42 0.047 0.056 A2 2.2 2.96 0.087 0.117 A3 0 0.25 0 0.010 b 0.7 0.96 0.028 0.038 b1 1.17 1.47 0.046 0.058 c 0.3 0.69 0.012 0.027 D1 8.5 9.5 0.335 0.374 D4 6.6 - 0.260 - E 9.8 10.55 0.386 0.415 E5 7.06 8.7 0.278 0.343 e 2.54BSC 0.1BSC H 14.7 15.7 0.579 0.618 H2 0.95 1.65 0.037 0.065 L 1.9 2.8 0.075 0.110 L1 - 1.78 - 0.070 L4 θ Version 1.1,Dec-2020 DIMENSIONS IN INCHES 0.25BSC 0° 9° 7 0.01BSC 0° 9° www.lonten.cc LSGE10R042 Revision History__________________________________________________________ LSGE10R042 Revision:2020-12-30 ,Rev 1.1 Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 1.1,Dec-2020 8 www.lonten.cc