HB840U(CHA)

BVDSS = 520 V RDS(on) typ = 0.75Ω HB840U ID = 8.0 A 520V N-Channel MOSFET TO-263 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 25 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.75 Ω (Typ.) @V GS=10V  100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 520 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 8.0 A Drain Current – Continuous (TC = 100℃) 5.4 A IDM Drain Current – Pulsed 36 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 360 mJ IAR Avalanche Current (Note 1) 8.0 A EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 135 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 1.07 W/℃ -55 to +150 ℃ 300 ℃ Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 0.93 RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5 Units ℃/W HB840U Sep 2019 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 4.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 4.0 A 0.7 0.75 0.85 Ω VGS = 0 V, ID = 250 ㎂ 520 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.57 -- V/℃ VDS = 500 V, VGS = 0 V -- -- 1 ㎂ VDS = 400 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 1000 1300 ㎊ -- 130 170 ㎊ -- 20 26 ㎊ -- 25 50 ㎱ -- 60 120 ㎱ -- 130 260 ㎱ -- 90 180 ㎱ -- 25 33 nC -- 6 -- nC -- 12 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 250 V, ID = 8.0 A, RG = 25 Ω (Note 4,5) VDS = 400V, ID = 8.0 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 8.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 36 VSD Source-Drain Diode Forward Voltage IS = 8.0 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 335 -- ㎱ Qrr Reverse Recovery Charge IS = 8.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 2.95 -- μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=8mH, IAS=9.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤9.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature A HB840U Electrical Characteristics TC=25 °C HB840U Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 2000 Ciss Coss 1000 500 * Note ; 1. VGS = 0 V 2. f = 1 MHz Crss VGS, Gate-Source Voltage [V] 1500 Capacitances [pF] 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 100V VDS = 250V 10 VDS = 400V 8 6 4 2 * Note : ID = 9.0 A 0 10-1 0 100 101 0 5 10 15 20 25 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 30 HB840U Typical Characteristics (continued) Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 10 Operation in This Area is Limited by R DS(on) 10 µs 8 100 ID, Drain Current [A] 100 µs 1 ms 10 ms 100 ms 101 DC 10-1 * Notes : 1. TC = 25 oC 10-2 100 6 4 2 2. TJ = 150 oC 3. Single Pulse 101 102 0 25 103 50 75 100 Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 D=0.5 * Notes : 1. ZθJC(t) = 0.93 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.2 10-1 0.1 0.05 0.02 0.01 PDM single pulse t1 10-2 10-5 10-4 125 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response ID, Drain Current [A] 102 10-3 10-2 10-1 t2 100 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 101 150 HB840U Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time HB840U Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TO-263 HB840U Package Dimension