STB30NF10T4-VB

STB30NF10T4 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 45 0.035 at VGS = 4.5 V 40 • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package Available RoHS* COMPLIANT D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Parameter Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TA = 25 °Cc Operating Junction and Storage Temperature Range ID Unit V 45 30 IDM 135 IAR 35 EAR 61 A mJ b PD 127 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 1.4 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. 服务热线：400-655-8788 1 STB30NF10T4 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VSS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 125 °C 50 VDS = 80 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) Drain-Source On-State Resistancea rDS(on) 75 0.030 VGS = 4.5 V, ID = 3 A 0.035 VGS = 10 V, ID = 5 A, TJ = 125 °C Forward Transconductance VDS = 15 V, ID = 15 A gfs V nA µA A VGS = 10 V, ID = 5 A Ω 0.050 VGS = 10 V, ID = 3 A, TJ = 175 °C a 3 0.062 10 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c 3100 VGS = 0 V, VDS = 25 V, f = 1 MHz 150 35 VDS = 50 V, VGS = 10 V, ID = 40 A Gate-Source Charge Qgs Gate-Drain Chargec Qgd 9 RG 1.7 Gate Resistance Turn-On Delay Time c Rise Timec Turn-Off Delay Timec Fall Timec td(on) tr td(off) pF 410 VDD = 50 V, RL = 1.25 Ω ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω tf 60 nC 11 Ω 11 20 12 20 30 45 12 20 ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS 40 Pulsed Current ISM 120 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr IF = 30 A, di/dt = 100 A/µs A 1.0 1.5 V 60 100 ns 5 8 A 0.15 0.4 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 STB30NF10T4 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 75 75 VGS = 10 thru 5V 60 45 ID - Drain Current (A) I D - Drain Current (A) 60 4V 30 45 30 TC = 125 °C 15 15 25 °C 2V - 55 °C 0 0 0 2 4 6 8 0 10 1 2 4 3 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 100 0.10 TC = - 55 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 80 25 °C 60 125 °C 40 0.08 0.06 VGS = 4.5V 0.04 20 VGS = 10 V 0.02 0 0 15 30 45 60 0 75 15 30 60 75 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 4000 20 VGS - Gate-to-Source Voltage (V) Ciss 3200 C - Capacitance (pF) 45 2400 1600 800 Crss VDS = 50 V ID =10 A 16 12 8 4 Coss 0 0 0 20 40 60 80 100 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 60 70 服务热线：400-655-8788 3 STB30NF10T4 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.5 100 VGS = 10 V ID = 15 A I S - Source Current (A) (Normalized) r DS(on) - On-Resistance 2.0 1.5 0.8 TJ = 150 °C 10 TJ = 25 °C 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 Drain-Source Breakdown Voltage (V) 130 100 I Dav (A) 0.3 10 IAV (A) at TA = 25 °C 1 IAV (A) at TA = 150 °C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 ID = 10 mA 125 120 115 110 105 100 95 - 50 - 25 0 25 50 75 100 125 150 tin (s) TJ - Junction Temperature (°C) Avalanche Current vs. Time Drain-Source Breakdown Voltage vs. Junction Temperature 175 服务热线：400-655-8788 4 STB30NF10T4 www.VBsemi.com THERMAL RATINGS 1000 50 100 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 0 0 25 50 75 100 125 150 Limited by rDS(on)* 10 µs 10 100 µs 1 ms 10 ms 1 0.1 0.1 175 TC - Ambient Temperature (°C) 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature DC, 100 ms TC = 25 °C Single Pulse 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 STB30NF10T4 www.VBsemi.com TO-263 (D2PAK): 3-LEAD -B- L2 c2 6 E1 K D4 -A- D2 D3 A E L3 L D D1 E3 A A b2 b e Detail “A” c E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.002 0.254 BSC - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 服务热线：400-655-8788 6 STB30NF10T4 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 7 STB30NF10T4 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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