LSE65R380GF

LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Lonten N-channel 650V, 11A, 0.38Ω LonFETTM Power MOSFET Description Product Summary LonFET VDS @ Tj,max 700V RDS(on),max 0.38Ω device has extremely low on resistance, making it IDM 30A especially suitable for applications which require Qg,typ 23nC TM Power MOSFET is fabricated using advanced super junction technology. The resulting superior power density and outstanding efficiency. Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg = 23nC)  100% UIS tested  RoHS compliant TO-220F TO-220MF TO-263 TO-262 TO-252 D Applications G  Power faction correction (PFC).  Switched mode power supplies (SMPS).  Uninterruptible power supply (UPS). S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Symbol VDSS ( TC = 25°C ) ID ( TC = 100°C ) Pulsed drain current IDM 1) Value Unit 650 V 11 A 7 A 30 A Gate-Source voltage VGSS ±30 V Avalanche energy, single pulse 2) EAS 270 mJ Avalanche energy, repetitive 3) EAR 0.5 mJ Avalanche current, repetitive IAR 11 A 33 W 0.26 W/°C 125 W 1 W/°C 3) Power Dissipation TO-220MF ( TC = 25°C ) - Derate above 25°C Power Dissipation TO-262 ( TC = 25°C ) PD - Derate above 25°C Mounting torque To-262 ( M3 and M3.5 screws ) 60 Mounting torque To-220MF ( M2.5 screws ) 50 Operating and Storage Temperature Range TJ, TSTG Continuous diode forward current Diode pulse current Version 2.1,Sep-2019 Ncm -55 to +150 °C IS 11 A IS,pulse 30 A 1 www.lonten.cc LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Thermal Characteristics TO-262/TO-252/TO-263/TO-220F Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RθJC 1 °C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W Tsold 260 °C Value Unit Soldering temperature, wavesoldering only allowed at leads. (1.6mm from case for 10s) Thermal Characteristics TO-220MF Parameter Symbol Thermal Resistance, Junction-to-Case RθJC 3.8 °C/W Thermal Resistance, Junction-to-Ambient RθJA 80 °C/W Tsold 260 °C Soldering temperature, wavesoldering only allowed at leads. (1.6mm from case for 10s) Package Marking and Ordering Information Device Device Package Marking Units/Tube LSC65R380GF TO-220F LSC65R380GF 50 LSD65R380GF TO-220MF LSD65R380GF 50 LSE65R380GF TO-263-2L LSE65R380GF LSF65R380GF TO-262 LSF65R380GF LSG65R380GF TO-252 LSG65R380GF Electrical Characteristics Parameter Units/Real 800 50 2500 Tc = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA 650 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=0.25mA 2.5 3.5 4.5 V Drain cut-off current IDSS VDS=650 V, VGS=0 V, μA Tj = 25°C - - 1 Tj = 125°C - 10 - Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 50 nA Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -50 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=5.5 A - Tj = 25°C - 0.34 0.38 Ω Tj = 150°C - 0.86 - Gate resistance RG f=1 MHz, open drain - 4.6 - Input capacitance Ciss VDS = 100 V, VGS = 0 V, - 1068 - Output capacitance Coss f = 250 kHz - 39 - Reverse transfer capacitance Crss - 1.8 - Turn-on delay time td(on) - 15 - Ω Dynamic characteristics Version 2.1,Sep-2019 VDD = 380V, ID = 5.5A 2 pF www.lonten.cc LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Rise time tr Turn-off delay time Fall time RG = 4.7Ω, VGS=10V - 27 - td(off) - 69 - tf - 11 ns - Gate charge characteristics Gate to source charge Qgs VDD=480 V, ID=5.5A, - 6.2 - Gate to drain charge Qgd VGS=0 to 10 V - 8.5 - Gate charge total Qg - 22.8 - Vplateau - 5.5 - V nC Reverse diode characteristics Diode forward voltage VSD VGS=0 V, IF=5.5A - 1.0 - V Reverse recovery time trr VR=50 V, IF=11A, - 140 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 0.8 - μC Peak reverse recovery current Irrm - 12 - A Notes: 1. Limited by maximum junction temperature, maximum duty cycle is 0.75. 2. IAS = 3A, VDD = 60V, Starting Tj= 25°C. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Version 2.1,Sep-2019 3 www.lonten.cc LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Electrical Characteristics Diagrams Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Common Source Tc = 25°C VDS=20 V Pulse test VGS=10V VGS=7V Common Source Tc = 25°C Pulse test VGS=6.5V VGS=6V VGS=5.5V Drain−source voltage VDS (V) Gate−source voltage VGS (V) Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperatur VGS = 10V Tc = 25°C Pulse test IDS=0.25 mA Pulse test Drain current ID (A) Junction temperature Tj (°C) Figure 5. Breakdown Voltage vs. Temperature Figure 6. On-Resistance vs. Temperature VGS=0 V IDS=0.25 mA Pulse test VGS=10 V IDS=3.5 A Pulse test Junction temperature Tj (°C) Version 2.1,Sep-2019 Junction temperature Tj (°C) 4 www.lonten.cc LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characterist Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss Coss ID = 5.5A Notes: f = 250 kHz VGS=0 V Crss Drain-Source Voltage VDS (V) Total Gate Charge QG (nC) Figure 9.1 Maximum Safe Operating Area Figure 9.2 Maximum Safe Operating Area TO-220MF TO-263-2L/TO-262/TO-252/ TO-220F Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Figure 10.1 Power Dissipation vs. Temperature Figure 10.2 Power Dissipation vs. Temperature TO-220MF TO-263-2L/TO-262/TO-252/ TO-220F Case temperature Tc (°C) Case temperature Tc (°C) Version 2.1,Sep-2019 5 www.lonten.cc LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Figure 11.1 Transient Thermal Response Curve TO-220MF Pulse Width t (s) Figure 11.1 Transient Thermal Response Curve TO-263-2L/TO-262/TO-252/ TO-220F Pulse Width t (s) Gate Charge Test Circuit & Waveform Version 2.1,Sep-2019 6 www.lonten.cc LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Version 2.1,Sep-2019 7 www.lonten.cc LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Mechanical Dimensions for TO-263 COMMON DIMENSIONS SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A 4.37 4.57 4.77 0.172 0.180 0.188 A1 1.22 1.27 1.42 0.048 0.050 0.056 A2 2.49 2.89 2.89 0.098 0.114 0.114 A3 0.00 0.13 0.25 0.000 0.005 0.010 b 0.70 0.81 0.96 0.028 0.032 0.034 b1 1.17 1.27 1.47 0.046 0.050 0.058 c 0.30 0.38 0.53 0.012 0.015 0.021 D1 8.50 8.70 8.90 0.335 0.343 0.350 D4 6.60 — — 0.260 — — E 9.86 10.16 10.36 0.389 0.400 0.408 E5 7.06 — — 0.278 — — e 2.54 BSC 0.100 BSC H 14.70 15.10 15.50 0.579 0.594 0.610 H2 1.07 1.27 1.47 0.042 0.050 0.058 L 2.00 2.30 2.60 0.079 0.091 0.102 L1 1.40 1.55 1.70 0.055 0.061 0.067 L4 θ 0.25 BSC 0° 5° 0.010 BSC 9° 0° 0.197° 0.354° TO-263 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Version 2.1,Sep-2019 Lonten LSE65R380GF ABYWW99 Part Number “99” Manufacturing Code 8 www.lonten.cc LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Mechanical Dimensions for TO-220F COMMON DIMENSIONS MM INCH SYMBOL MIN NOM MAX MIN NOM MAX A 4.37 4.57 4.70 0.172 0.180 0.185 A1 1.25 1.30 1.40 0.049 0.051 0.055 A2 2.20 2.40 2.60 0.087 0.094 0.102 b 0.70 0.80 0.95 0.028 0.031 0.037 b2 1.17 1.27 1.47 0.046 0.050 0.058 c 0.45 0.50 0.60 0.018 0.020 0.024 D 15.10 15.60 16.10 0.594 0.614 0.634 D1 8.80 9.10 9.40 0.346 0.358 0.370 D2 5.50 — — 0.217 — — E 9.70 10.00 10.30 0.382 0.394 0.406 E3 7.00 — — 0.276 — — e 2.54BSC 0.1BSC e1 5.08BSC 0.2BSC H1 6.25 6.50 6.85 0.246 0.256 0.270 L 12.75 13.50 13.80 0.502 0.531 0.543 L1 — 3.10 3.40 — 0.122 0.134 Øp 3.40 3.60 3.80 0.134 0.142 0.150 Q 2.60 2.80 3.00 0.102 0.110 0.118 TO-220F Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Version 2.1,Sep-2019 Lonten LSC65R380GF ABYWW99 Part Number “99” Manufacturing Code 9 www.lonten.cc LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Mechanical Dimensions for TO-252 COMMON DIMENSIONS mm SYMBOL MIN NOM MAX A 2.20 2.30 2.38 A1 0.00 — 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.46 c 0.43 0.53 0.61 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.73 E1 4.63 — — e 2.286BSC H 9.40 L 1.38 L1 10.10 10.50 1.50 1.75 2.90REF L2 0.51BSC L3 0.88 — 1.28 L4 0.50 — 1.00 L5 1.65 1.80 1.95 θ 0° — 8° TO-252 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LSG65R380GF ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 2.1,Sep-2019 10 www.lonten.cc LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Mechanical Dimensions for TO-220MF COMMON DIMENSIONS MM SYMBOL INCH MIN NOM MAX MIN NOM MAX E 9.96 10.16 10.36 0.392 0.400 0.408 A 4.50 4.70 4.90 0.177 0.185 0.193 A1 2.34 2.54 2.74 0.092 0.100 0.108 A2 0.30 0.45 0.60 0.012 0.002 0.024 A4 2.65 2.76 2.96 0.104 0.109 0.117 C 0.40 0.50 0.65 0.016 0.020 0.026 D 15.57 15.87 16.17 0.613 0.625 0.637 H1 6.70REF e 2.54BSC 0.264REF 0.1BSC ØP 3.03 3.18 3.38 0.119 0.125 0.133 L 12.68 12.98 13.28 0.499 0.511 0.523 L1 2.88 3.03 3.18 0.113 0.119 0.125 ØP3 3.15REF 0.124REF F3 3.15 3.30 3.45 0.124 0.130 0.136 G3 1.25 1.35 1.55 0.049 0.053 0.061 b1 1.18 1.28 1.43 0.046 0.050 0.056 b2 0.70 0.80 0.95 0.028 0.031 0.037 TO-220MF Part Marking Information Lonten Logo Lonten LSD65R380GF ABYWW99 “AB” Foundry & Assembly Code “YWW” Date Code Version 2.1,Sep-2019 Part Number “99” Manufacturing Code 11 www.lonten.cc LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Mechanical Dimensions for TO-262 TO-262 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Version 2.1,Sep-2019 Lonten LSF65R380GF ABYWW99 Part Number “99” Manufacturing Code 12 www.lonten.cc LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Jun. 2018 Revision 2.0 Version 2.1,Sep-2019 13 www.lonten.cc