VBL2610N

VBL2610N www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.064 at V GS = - 10 V - 30 0.077 at VGS = - 4.5 V - 28 • TrenchFET® Power MOSFET • 100 % UIS Tested Qg (Typ) APPLICATIONS 12 • Load Switch S D2PAK (TO-263) G G D S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C Symbol Limit Unit VGS ± 20 V - 30 ID - 20 IDM - 90 Continuing Source Current (Diode Conduction) IS - 28 Avalanche Current IAS - 31 EAS 7.2 Pulsed Drain Current Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C mJ 60 a PD W 6b TJ, Tstg Operating Junction and Storage Temperature Range A - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Symbol t ≤ 10 sec Steady State RthJA RthJC Typical Maximum 20 25 62 75 5 6 Unit °C/W Notes: a. See SOA curve for voltage derating. b. Surface Mounted on 1" x 1" FR-4 boad. 服务热线：400-655-8788 1 VBL2610N www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA - 1.0 IGSS VDS = 0 V, VGS = ± 20 V Typa Max - 2.0 - 3.0 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb IDSS Drain-Source On-State Resistanceb b Forward Transconductance Dynamic rDS(on) ± 100 VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 175 °C - 150 ID(on) VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 5 A, TJ = 125 °C 0.110 VGS = - 10 V, ID = - 5 A, TJ = 175 °C 0.250 VGS = - 4.5 V, ID = - 2 A 0.077 VDS = - 15 V, ID = - 5 A 8 Input Capacitance Ciss Coss Reverse Transfer Capacitance Crss 110 Total Gate Charge Qg 12.5 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg td(on) Turn-Off Delay Timec td(off) Turn-On Delay Rise Timec Fall Timec tr µA A 0.064 Output Capacitance Timec nA - 10 VGS = - 10 V, ID = - 5 A gfs V Ω S 1000 VDS = - 25 V, VGS = 0 V, f = 1 MHz pF 210 VDS = - 30 V, VGS = - 10 V, ID = - 8.4 A 2.3 f = 1 MHz 8.0 19 nC 3.2 VDD = - 30 V, RL = 3.57 Ω ID ≅ - 8.4 A, VGEN = - 10 V, RG = 2.5 Ω tf Ω 5 10 14 25 15 25 7 12 - 0.9 - 1.3 ns b Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Pulsed Current ISM Forward Voltageb VSD Reverse Recovery Time trr Reverse Recovery Time Qrr - 30 IF = - 2 A, VGS = 0 V IF = - 8 A, di/dt = 100 A/µs A V 50 80 ns 80 120 nC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 VBL2610N www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless noted 20 30 TC = - 55 °C VGS = 10 thru 6 V 25 °C 16 ID - Drain Current (A) I D - Drain Current (A) 24 5V 18 12 4V 12 125 °C 8 4 6 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 2 0 4 6 8 10 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 12 0.150 TC = - 55 °C 0.125 25 °C rDS(on) - On-Resistance (Ω) g fs - Transconductance (S) 10 125 °C 8 6 4 2 VGS = 4.5 V 0.100 VGS = 10 V 0.075 0.050 0.025 0 0.000 0 2 4 8 6 10 0 4 8 ID - Drain Current (A) 16 20 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 2400 20 V GS - Gate-to-Source Voltage (V) 2100 1800 C - Capacitance (pF) 12 Ciss 1500 1200 900 600 Coss 300 Crss 0 0 VDS = 30 V ID = 8.4 A 16 12 8 4 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance 50 60 0 5 10 15 20 25 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 3 VBL2610N www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless noted 2.3 2.0 10 VGS = 10 V ID = 50 A TJ = 150 °C I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 1 1.7 1.4 1.1 0.1 TJ = 25 °C 0.01 0.8 0.5 - 50 0.001 - 25 0 25 50 75 100 125 150 175 0.0 TJ - Junction Temperature (°C) 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 10 100 8 10 I D - Drain Current (A) I D - Drain Current (A) 10 µs 6 4 1 ms 1 10 ms 100 ms, DC 0.1 TC = 25 °C Single Pulse 0.01 2 0 100 µs *Limited by rDS(on) 0.001 0 25 50 75 100 125 150 TC - Case Temperature (°C) Drain Current vs. Case Temperature 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified Safe Operating Area 服务热线：400-655-8788 4 VBL2610N www.VBsemi.com THERMAL RATINGS 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-−4 10- 3 10- 2 10- 1 1 10 100 600 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-−4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 VBL2610N www.VBsemi.com TO-263AB A (Datum A) 3 4 A 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. 4 E1 Section B - B and C - C Scale: none View A - A INCHES INCHES MILLIMETERS MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 - b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 2.54 BSC 15.88 0.575 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.100 BSC 0.625 0.070 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 服务热线：400-655-8788 6 VBL2610N www.VBsemi.com RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 7 VBL2610N www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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