VBL165R18

VBL165R18 www.VBsemi.com N-Channel 650 V (D-S) MOSFET PRODUCT SUMMARY FEATURES 650 VDS (V) at TJ max. RDS(on) max. () at 25 °C VGS = 10 V Qg max. (nC) • • • • • • 0.36 106 Qgs (nC) 14 Qgd (nC) 33 Single Configuration Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Consumer and computing - ATX power supplies • Industrial - Welding - Battery chargers • Renewable energy - Solar (PV inverters) • Switch mode power supplies (SMPS) D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID UNIT V 18 16 A IDM 53 1.7 W/°C Single Pulse Avalanche Energy b EAS 367 mJ Maximum Power Dissipation PD 208 W TJ, Tstg -55 to +150 °C Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dt d for 10 s Soldering Recommendations (Peak Temperature) c Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.1 A. c. 1.6 mm from case. d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C. 服务热线：400-655-8788 dV/dt 37 31 300 V/ns °C 1 VBL165R18 www.VBsemi.com THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - 62 Maximum Junction-to-Case (Drain) RthJC - 0.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) VDS VGS = 0 V, ID = 250 μA 650 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.67 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 650 V, VGS = 0 V - - 1 VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 500 - Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-State Resistance Forward Transconductance μA  VDS = 30 V, ID = 11 A - 0.36 7.0 - gfs - S VGS = 0 V, VDS = 100 V, f = 1 MHz - 2322 - - 105 - - 4 - - 84 - - 293 - - 71 106 - 14 - RDS(on) VGS = 10 V ID = 11 A Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Effective Output Capacitance, Energy Related a Co(er) Effective Output Capacitance, Time Related b Co(tr) pF VDS = 0 V to 520 V, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs VGS = 10 V ID = 11 A, VDS = 520 V Gate-Drain Charge Qgd - 33 - Turn-On Delay Time td(on) - 22 44 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Gate Input Resistance Rg nC VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1  - 34 68 - 68 102 - 42 84 f = 1 MHz, open drain - 0.78 - - - 21 - - 53 - 0.9 1.2 V - 160 - ns - 1.2 - μC - 14 - A ns  Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the  integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 11 A, VGS = 0 V TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. 2 服务热线：400-655-8788 VBL165R18 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 40 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V 5V 3 TJ = 25 °C ID = 11 A RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 60 30 20 10 2.5 2 1.5 0.5 0 0 5 10 15 20 25 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 10 000 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V 5V TJ = 150 °C Ciss ġ Capacitance (pF) ID, Drain-to-Source Current (A) 0 - 60 - 40 - 20 0 30 40 30 VGS = 10 V 1 20 1000 Coss 100 10 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd ġ ġ Crss 10 0 ġ ġ 1 0 5 15 10 20 25 30 0 VDS, Drain-to-Source Voltage (V) 100 200 300 500 400 600 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 14 5000 12 50 10 30 TJ = 150 °C Coss 8 Eoss 500 6 Eoss (μJ) 40 Coss (pF) ID, Drain-to-Source Current (A) 60 20 4 TJ = 25 °C 10 2 VDS = 29.6 V 0 0 5 10 15 20 25 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 服务热线：400-655-8788 50 0 0 100 200 300 VDS 400 500 600 Fig. 6 - Coss and Eoss vs. VDS 3 VBL165R18 www.VBsemi.com 25 VDS = 520 V VDS = 325 V VDS = 130 V 20 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 24 16 12 8 4 0 20 15 10 5 0 30 0 90 60 120 150 25 Qg, Total Gate Charge (nC) 100 125 150 Fig. 10 - Maximum Drain Current vs. Case Temperature 850 100 ID = 10 mA 825 VDS, Drain-to-Source Breakdown Voltage (V) ISD, Reverse Drain Current (A) 75 TJ, Case Temperature (°C) Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage TJ = 150 °C TJ = 25 °C 10 1 800 775 750 725 700 675 VGS = 0 V 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source-Drain Voltage (V) Fig. 8 - Typical Source-Drain Diode Forward Voltage 100 Fig. 11 - Temperature vs. Drain-to-Source Voltage 1 ms Operation in this Area Limited by RDS(on) 10 ms 0.1 TC = 25 °C TJ = 150 °C Single Pulse 0.01 1 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 100 μs Limited by RDS(on)* 1 650 - 60 - 40 - 20 0 IDM Limited 10 ID, Drain Current (A) 50 BVDSS Limited 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area 4 服务热线：400-655-8788 VBL165R18 www.VBsemi.com Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS QG 10 V 90 % QGS 10 % VGS QGD VG td(on) td(off) tf tr Charge Fig. 17 - Basic Gate Charge Waveform Fig. 14 - Switching Time Waveforms Current regulator Same type as D.U.T. L Vary tp to obtain required IAS VDS 50 kΩ D.U.T RG 12 V + - IAS 0.2 µF 0.3 µF V DD + D.U.T. - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit 服务热线：400-655-8788 5 VBL165R18 www.VBsemi.com Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel 6 服务热线：400-655-8788 VBL165R18 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.635 (9.017) (16.129) 0.355 (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 7 VBL165R18 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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