SE8090G

Oct 2015 SE8090G N-Channel Enhancement-Mode MOSFET Revision: A Features General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through For a single MOSFET   VDS = 80V RDS(ON) = 6.7mΩ @ VGS=10V FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Pin configurations See Diagram below TO-263 TO-220 Suffix “A” designates TO-220 Package Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V Drain Current Total Power Dissipation Continuous Pulsed @TA=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. ID 90 320 A PD 125 W TJ -55 to 175 ℃ 1. SE8090G Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS= 80V, VGS=0V IGSS Gate-Body Leakage Current VGS=20V Gate Threshold Voltage VDS= VGS, ID=250μA 2 VGS=10V, ID=40A - VGS(th) RDS(ON) Static Drain-Source On-Resistance 2 80 V 1 μA 100 nA 3 4 V 6.7 7.5 mΩ DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=40V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz 4120 pF 520 pF 200 pF 58 nC 15 nC 19 nC SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=64V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=40V, 34 ns td(off) Turn-Off Delay Time RGEN=4.7Ω 103 ns td(r) Turn-On Rise Time ID=2A 95 ns td(f) Turn-Off Fall Time 33 ns ID=40A Thermal Resistance Symbol RθJC Parameter Thermal Resistance Junction to Case(t≤10s) ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units - 1.2 ℃/W 2. SE8090G Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE8090G Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE8090G Package Outline Dimension TO-220 ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE8090G Package Outline Dimension TO-263 ShangHai Sino-IC Microelectronic Co., Ltd. 6. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 7.