HB3510P

HB3510P,HP3510P 100V N-Channel MOSFET FEATURES  Fast switching  100% avalanche tested TO-263  Improved dv/dt capability APPLICATIONS 1 TO-220 2 1 3 2 3 1.Gate 2. Drain 3. Source  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Parameter Symbol Unit TO-263 Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage TO-220 VDSS 100 V ID 50 A IDM 120 A VGSS ±20 V Single Pulse Avalanche Energy (note2) EAS 4500 mJ Avalanche Current (note1) IAR 50 A Repetitive Avalanche Energy (note1) EAR 36 mJ Power Dissipation (TC = 25ºC) PD Operating Junction and Storage Temperature Range 83 TJ, Tstg 110 -55~+150 W ºC Thermal Resistance Value Parameter Symbol Unit TO-263 TO-220 Thermal Resistance, Junction-to-Case RthJC 1.5 1.14 Thermal Resistance, Junction-to-Ambient RthJA 62.5 60 K/W . 1 V3.0 HB3510P,HP3510P Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 100 -- -- VDS = 100V, VGS = 0V, TJ = 25ºC -- -- 1 VDS = 80V, VGS = 0V, TJ = 125ºC -- -- 100 IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 15A -- 30 38 mΩ -- 1489 -- -- 608 -- Static Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage V μA Dynamic Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 275 -- Total Gate Charge Qg -- 60 -- Gate-Source Charge Qgs -- 6 -- Gate-Drain Charge Qgd -- 31 -- Turn-on Delay Time td(on) -- 22 -- Turn-on Rise Time tr -- 82 -- Turn-off Delay Time td(off) -- 52 -- -- 93 -- -- -- 30 -- -- 120 -- -- 2 V -- 68 -- ns -- 4.2 -- μC Turn-off Fall Time VDD 80V, ID = 50A, VGS = 10V VDD = 50V, ID =50A, RG = 25 Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25 ºC Pulsed Diode Forward Current ISM Body Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr TJ = 25ºC, ISD = 50A, VGS = 0V VGS = 0V,IS = 50A, diF/dt =100A /μs A Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 50A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 2 V3.0 HB3510P,HP3510P Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics (TJ = 25ºC) 103 15V 10V 8V 7V 6V 5V 60 IS, Source Current (A) ID, Drain Current (A) 80 Figure 2. Body Diode Forward Voltage 40 20 102 TJ = 150ºC 101 TJ = 25ºC 100 10-1 0 0 2 4 6 8 10 0.2 12 VDS, Drain-to-Source Voltage (V) 0.4 0.6 0.8 1 1.2 1.4 VSD, Source-to-Drain Voltage (V) Figure 3. Drain Current vs. Temperature Figure 4. BVDSS Variation vs. Temperature 1.15 35 BVDSS (Normalized) ID, Drain Current (A) VGS = 0V ID = 250uA 30 25 20 15 10 1.1 1.05 1 0.95 5 0.9 0 0 30 60 90 120 -50 150 TC, Case Temperature (A) RDS(on), On-Resistance (Normalized) ID, Drain Current (A) 60 TJ = 25ºC 45 TJ = 150ºC 15 0 2 4 6 100 150 Figure 6. On-Resistance vs. Temperature 75 0 50 TJ, Junction Temperature (ºC) Figure 5. Transfer Characteristics 30 0 8 10 3 VGS = 10V ID = 15A 2.5 2 1.5 1 0.5 0 -50 VGS, Gate-to-Source Voltage (V) 0 50 100 150 TJ, Junction Temperature (ºC) 3 V3.0 HB3510P,HP3510P Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Capacitance Figure 8. Gate Charge 12 VGS, Gate-to-Source Voltage (V) Capacitance (pF) 104 Ciss 103 Coss 102 Crss VGS = 0V f = 1MHz 101 0 15 30 45 VDD = 20V 10 VDD = 50V 8 VDD = 80V 6 4 2 0 0 60 15 VDS, Drain-to-Source Voltage (V) ZthJC, Thermal Impedance (K/W) 101 100 100 10-1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-2 10-3 10-3 10-6 60 Figure 10. Transient Thermal Impedance TO-251,TO-252 101 10-2 45 Qg, Total Gate Charge (nC) Figure 9. Transient Thermal Impedance TO-220F 10-1 30 10-5 10-4 10-3 10-2 10-1 100 101 10-7 10-5 10-4 10-3 10-2 10-1 100 Tp, Pulse Width (s) Tp, Pulse Width (s) . 10-6 4 V3.0 HB3510P,HP3510P Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform Suzhou Convert SemiConductor Co.,Ltd. 5 V3.0 HB3510P,HP3510P TO-263 6 V3.0 HB3510P,HP3510P TO-220 ±0.20 84 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 . φ3 4.57±0.20 0 .2 ±0 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 7 V3.0