ASDM540G-R

ASDM540G 100V N-Channel MOSFET Feature Product Summary ● High density cell design for lower Rdson ● Fully characterized avalanche voltage and current 100 V R DS(on),Typ@VGS=10V 31 mΩ ID 33 A VDS ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ●Power switching application ●Hard switched and High frequency circuits ●Uninterruptible power supply G D S TO-263 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID 33 A IDM 132 A PD 70 W EAS 96 mJ TJ,TSTG -55 To 175 ℃ Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Single pulse avalanche energy(Note 2) Operating Junction and Storage Temperature Range Unit Thermal Characteristic Thermal Resistance,Junction-to-Case R θJC 1.15 ℃/W Thermal Resistance,Junction-to-Ambient(PCB mount) R θJA 40 ℃/W Aug 2020 Version1.0 1/8 Ascend Semicondutor Co.,Ltd ASDM540G 100V N-Channel MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 - - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 1.6 2.4 V Drain-Source On-State Resistance(Note 3) RDS(ON) VGS=10V, ID=12A - 31 35 VGS=4.5V, ID=12A - 33 45 VDS=5V,ID=15A - 11 - S - 2300 - pF - 215 - pF - 195 - pF - 29 - nS Off Characteristics On Characteristics Forward Transconductance gFS mΩ Dynamic Characteristics Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Switching VDS=25V,VGS=0V, f=1.0MHz Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=50V, ID=20A, - 13 - nS td(off) VGS=10V,RGEN=10Ω - 58.2 - nS - 13.4 - nS - 55 - nC - 15 - nC - 20 - nC - - 1.2 V - 58 - nS - 110 - nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=80V,ID=20A VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage VSD Reverse Recovery Time Trr Reverse Recovery Charge Qrr VGS=0V,IS=20A （note3） Tj=25℃，IF=10A，di/dt=100A/uS Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. EAS condition :T j=25℃,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production. Aug 2020 Version1.0 2/8 Ascend Semicondutor Co.,Ltd ASDM540G 100V N-Channel MOSFET Characteristics Curves Figure 1 Output Characteristics Figure 2 Transfer Characteristics Figure 3 On-Resistance vs. ID and VGS Figure 4 On-Resistance vs. Junction Temperature Figure 5 On-Resistance vs. VGS Figure 6 Body Diode Forward Voltage Aug 2020 Version1.0 3/8 Ascend Semicondutor Co.,Ltd ASDM540G 100V N-Channel MOSFET Figure 7 Gate-Charge Characteristics Figure 9 Figure 8 Capacitance Characteristics Maximum Forward Biased Safe Figure 10 Single Pulse Power Rating Operation Area Figure 11 Aug 2020 Version1.0 Junction-to-Ambient Normalized Maximum Transient Thermal Impedance 4/8 Ascend Semicondutor Co.,Ltd ASDM540G 100V N-Channel MOSFET Test Circuit and Waveform Gate Charge Test Circuit Gate Charge Test Waveform Resistive Switching Test Circuit Resistive Switching Test Waveforms Unclamped Inductive Switching (UIS) Test Circuit Unclamped Inductive Switching (UIS) Test Waveforms Diode Recovery Test Circuit Aug 2020 Version1.0 Diode Recovery Test Waveforms 5/8 Ascend Semicondutor Co.,Ltd ASDM540G 100V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM540G-R 540 TO-263 Tape&Reel Quantity 800/Reel MARKING PACKAGE TO-263 Aug 2020 Version1.0 Packing 540 6/8 Ascend Semicondutor Co.,Ltd ASDM540G 100V N-Channel MOSFET 14.73+0.1 TO-263 Aug 2020 Version1.0 7/8 Ascend Semicondutor Co.,Ltd ASDM540G 100V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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