MN638SVL-RPT0TL

MN638SVL-RPT0TL Silicon NPN Darlington Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power amplifiers ·Including zener diode ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO(SUS) VEBO PARAMETER VALUE UNIT Collector-Base Voltage 450 V Collector-Emitter Voltage 350 V 6 V Emitter-Base Voltage VZ Zener Voltage 350 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 3.0 A PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ -40~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX UNIT 1.0 ℃/W Ordering Information Product MN638SVL-RPT0TL V01 Package TO-263 Packaging Tube 1 www.sourcechips.com MN638SVL-RPT0TL ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VZ V01 PARAMETER CONDITIONS MIN 350 TYP. MAX UNIT 450 V Zener Voltage IZ= 0.1mA V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 15mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 15mA 2.0 V ICBO Collector Cutoff Current VCB= 350V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 5 mA hFE DC Current Gain IC= 4A; VCE= 5V 2 www.sourcechips.com 6 500 V 4000