2N3773T3BL

2N3773T3BL Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 8A ·Complement to Type 2N6609 APPLICATIONS ·Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEX Collector-Emitter Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 16 A ICP Collector Current-Peak 30 A IB Base Current-Continuous 4 A IBP Base Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ MAX UNIT 1.17 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case Ordering Information Product 2LN3773T3BL V01 Package TO-3 Packaging Box 1 www.sourcechips.com 2N3773T3BL ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 140 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; VBE(off)= 1.5V; RBE=100Ω 160 V VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; RBE=100Ω 150 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 1.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A 4.0 V VBE(on) Base-Emitter On Voltage IC= 8A ; VCE= 4V 2.2 V ICEO Collector Cutoff Current VCE= 120V; IB=0 10 mA IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 5 mA hFE-1 DC Current Gain IC= 8A ; VCE= 4V 15 hFE-3 DC Current Gain IC= 16A ; VCE= 4V 5 Second Breakdown Collector Current with Base Forward Biased VCE= 100V,t= 1.0s,Nonrepetitive Is/b V01 CONDITIONS 2 www.sourcechips.com MIN 1.5 MAX UNIT 60 A