2N3055
NPN Power Silicon Transistor
Rev. V4
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/407
• TO-3 (TO-204AA) Package
• Designed for General Purpose Switching and Amplifier
Applications
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units
Min.
Max.
Collector - Emitter Breakdown Voltage
IC = 200 mA dc
IC = 200 mA dc, RBE = 100 Ω
VBE = -1.5 V dc, IC = 200 mA dc
V(BR)CEO
V(BR)CER V dc
V(BR)CEX
70
80
90
—
Collector - Emitter Cutoff Current
VCE = 60 Vdc
VBE = -1.5 V dc, VCE = 100 V dc
ICEO
ICEX1
mA dc
—
1
1
Emitter - Base Cutoff Current
VEB = 7.0 V dc
IEBO
mA dc
—
1
Forward Current Transfer Ratio
IC = 0.5 A dc, VCE = 4.0 V dc
IC = 4.0 A dc, VCE = 4.0 V dc
IC = 10.0 A dc, VCE = 4.0 V dc
hFE
-
40
20
5
—
60
—
Collector - Emitter Saturation Voltage
IC = 4.0 A dc, IB = 0.4 A dc
IC = 10.0 A dc, IB = 3.3 A dc
VCE(SAT) V dc
—
0.75
2.0
Emitter - Base Saturation Voltage
IC = 4.0 A dc, VCE = 4.0 V dc
VBE(SAT) V dc
—
1.4
8
40
Off Characteristics
On Characteristics
Dynamic Characteristics
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
IC = 1 A dc, VCE= 4.0 Vdc, f = 100 kHz
| hfe |
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz
Cobo
pF
—
700
Turn-On Time
VCC = 30 Vdc; IC = 4.0 A dc; IB1 = 0.4 A dc
ton
µs
—
6
Turn-Off Time
IC = 4.0 A dc; IB1= -IB2= 0.4 A dc
toff
µs
—
12
Switching Characteristics
Safe Operating Area
DC Tests:
Test 1:
Test 2:
TC = +25 °C, I Cycle, t = 1.0 s
VCE = 7.8 V dc, IC = 15 A dc
VCE = 70.0 V dc, IC = 1.67 A dc
1
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Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
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2N3055
NPN Power Silicon Transistor
Rev. V4
Parameter
Test Conditions
Symbol Units
Base Emitter Voltage (unsaturated)
VCE = 4 V dc, IC = 4 A dc
VBE
V dc
Collector - Emitter Cutoff Current
TA = +150oC
VCE = 100 Vdc
VBE = -1.5 V dc
ICEX2
mA dc
Forward - Current Transfer Ratio
TA = -55oC
VCE = 4 V dc, IC = 4 A dc
hFE4
Collector—Emitter Saturated Voltage
IC = 10 A dc, IB = 3.3 A dc
Min.
VCE(sat)2 V dc
Ratings
Symbol
Value
Collector - Emitter Voltage
VCEO
70 V dc
Collector - Base Voltage
VCBO
100 V dc
Emitter - Base Voltage
VEBO
7 V dc
Base Current
IB
7 V dc
Total Power Dissipation @ TA = +25°C
IC
15 A dc
1, 2
PT
6W
3
PT
117 W
TJ, TSTG
-65°C to +200°C
Symbol
Max. Value
RθJC
1.5°C/W
Total Power Dissipation @ TC = +25°C
Operating & Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
1.
2.
3.
4.
4
TA = room ambient as defined in the general requirements of 4.5 of MIL-STD-750
Derate linearly @ 34.2 mW / °C for TA = 25 °C
See figure 2 of MIL-PRF-19500/407 for temperature-power derating curves.
See figure 3 for transient thermal impedance graph.
2
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Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
1.4
—
10
15
Absolute Maximum Ratings (TA = +25oC unless otherwise noted)
Collector Current
Max.
2
2N3055
NPN Power Silicon Transistor
Rev. V4
Outline Drawing (TO-3)
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N3055
NPN Power Silicon Transistor
Rev. V4
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4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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