D11N20

山东晶导微电子股份有限公司 D11N20 Jingdao Microelectronics co.LTD 11A, 200V N-CHANNEL POWER MOSFET TO-252W DESCRIPTION The D11N20 is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. PIN1 PIN2 PIN3 Features • RDS(ON) ≤0.4 Ω @ VGS=10V, ID=5,5A • Fast switching capability • Avalanche energy tested • Improved dv/dt capability, high ruggedness SYMBOL 2.4.Drain Mechanical data • Case: TO-252W • A pprox. Weight: 0.315g ( 0.011oz) • Lead free finish, RoHS compliant • Case Material: “Green” molding compound, UL flammability classification 94V-0,“Halogen-free”. 1.Gate 3.Source ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Symbols RATINGS Drain-Source Voltage V DSS 200 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current ID 11 A Pulsed Drain Current (Note 2) I DM 44 A Avalanche Energy E AS 180 mJ dv/dt 2.1 V/ns PD 74 W T j, T stg -55 ~ +150 °C PARAMETER Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) Power Dissipation Operation Junction Temperature and Storage Temperature Units Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 1mH,, VDD = 50V, RG = 20 Ω, Starting TJ = 25°C 4. ISD ≤ 11A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Symbols RATINGS Units Junction to Ambient R thJA 63 °C/W Junction to Case R thJC 2.31 °C/W Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2021.06 TO-252W-MOS-D11N20-11A200V Page 1 of 8 山东晶导微电子股份有限公司 D11N20 Jingdao Microelectronics co.LTD ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) Symbols PARAMETER TEST CONDITIONS Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current BV DSS VDS=0V,ID=250uA I DSS VDS=200V,VGS=0V 120 VGS=30V,VDS=0V 100 VGS=-30V,VDS=0V -100 Forward I GSS Gate- Source Leakage Current Reverse 200 V nA nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS,ID=250uA Static Drain-Source On-State Resistance RDS(ON) VGS=10V,ID=5.5A 0.37 0.8 2 V 0.4 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, 1000 pF Output Capacitance COSS VGS=0V, 90 pF Reverse Transfer Capacitance CRSS f=1.0MHz 12 pF QG VDS=160V,VGS=10V, 31 nC Gate-Source Charge QGS ID=11A,IG=1mA 3.3 nC Gate-Drain Charge QGD (NOTE1,2) 16.5 nC tD(ON) VDS=100V,VGS=10V, 3.5 ns ID=11A,RG=20Ω 20 ns (NOTE1,2) 150 ns 36 ns SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) Turn-On Delay Time (Note 1) Turn-On Rise Time tR Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS 11 A Maximum Body-Diode Pulsed Current ISM 44 A Drain-Source Diode Forward Voltage (Note 1) VSD IS=11A,VGS=0V 1.4 V trr IS=11A,VGS=0V, 370 ns Qrr di/dt=100A/us 0.95 uC Maximum Body-Diode Continuous Current Reverse Recovery Time (Note 1) Reverse Recovery Charge Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. 2021.06 www.sdjingdao.com Page 2 of 8 山东晶导微电子股份有限公司 D11N20 Jingdao Microelectronics co.LTD Test Circuits and waveforms + D.U.T VDS + ISD - RG VGS Driver VDD *dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T Peak Diode Recovery dv/dt Test Circuit Period VGS (Driver) D= P.W P.W Period VGS=10V IFM,Body Diode Forward Current di/dt ISD (D.U.T) IRM Body Diode Reverse Current Body Diode Reverse Current VDS (D.U.T) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms 2021.06 www.sdjingdao.com Page 3 of 8 山东晶导微电子股份有限公司 D11N20 Jingdao Microelectronics co.LTD Test Circuits and waveforms RL VDS VDS 90% VGS RG VDD 10% VGS Pulse Width≤ 1μs Duty Factor≤0.1% D.U.T tD(ON) Switching Test Circuit tD(OFF) tR tF Switching Waveforms VGS QG Same Type as D.U.T QGS QGD VDS VGS D.U.T Charge Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD ID(t) VDD tP VDS(t) VDD D.U.T tP Unclamped Inductive Switching Test Circuit 2021.06 Time Unclamped Inductive Switching Waveforms www.sdjingdao.com Page 4 of 8 山东晶导微电子股份有限公司 D11N20 Jingdao Microelectronics co.LTD Typical Characteristics Fig.1 Drain Current vs. Gate-Source Voltage Fig.2 Drain-Source On-Resistance vs. Gate-Source Voltage 6 Drain-Source On-Resistance, RDS(ON) (Ω) 0.6 TA=25°C Pulsed test VGS=6~10V Drain Current, ID (A) 5 4 VGS=6V 3 VGS=5.5V 2 VGS=5V 1 VGS=4.5V 0 0 4 8 12 16 20 24 28 TA=25°C Pulsed test 0.5 ID=11.0A 0.4 ID=5.5A 0.3 0.2 0.1 0 0 2 Drain-Source Voltage, VDS (V) 6 4 8 10 12 14 Gate-Source Voltage, VGS (V) Fig.4 Capacitance Characteristics Fig.3 Gate Charge Characteristics 10 CISS VDS=160V VGS=10V ID=11A Pulsed 1000 8.0 Capacitance, C (pF) Gate-Source Voltage, VGS (V) 1200 6.0 4.0 2.0 800 CRSS 600 400 COSS 200 0.0 5 10 15 20 25 30 5 0 35 Total Gate Charge, QG (nC) Fig.6 Breakdown Voltage vs. Junction Temperature 1.2 Drain-Source Breakdown Voltage Normalized 3.0 Drain-Source On-Resistance Normalized 25 20 15 Drain-Source Voltage, VDS (V) Fig.5 Drain-Source On-Resistance vs. Junction Temperature 2.5 10 VGS=10V ID=5.5A Pulsed 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 ID=0.25mA Pulsed 1.0 0.8 0.6 0.4 0.2 0 25 175 Junction Temperature, TJ (°C) 75 50 100 125 150 175 Junction Temperature, TJ (°C) Fig.8 Source Current vs. Source-Drain Voltage Fig.7 Gate Threshold Voltage vs. Junction Temperature 10 0.5 0.25 15 A= 25 °C A= 1.0 T 0.75 T 1.0 0 °C 1.25 Source Current, IS (A) Gate Threshold Voltage Normalized ID=0.25mA Pulsed 0.1 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage, VSD (V) Junction Temperature, TJ (°C) 2021.06 0 www.sdjingdao.com Page 5 of 8 山东晶导微电子股份有限公司 D11N20 Jingdao Microelectronics co.LTD Typical Characteristics Fig.10 Drain-Source On-Resistance vs. Drain Current Fig.9 Drain Current vs. Gate-Source Voltage Drain Current, ID (A) 10 Drain-Source On-Resistance, RDS(ON) (Ω) 0.8 TA=25°C Pulsed 8 6 4 2 0 1 3 2 4 5 6 0.7 TA=25°C VGS=10V Pulsed 0.6 0.5 0.4 0.3 0.2 0.1 0 2 4 7 6 10 8 Drain Current, ID (A) Gate-Source Voltage, VGS (V) Fig.11 Drain Current vs. Junction Temperature Fig.12 Power Dissipation vs. Junction Temperature 75 8 Power Dissipation, PD (W) Drain Current, ID (A) 10 6 4 2 0.0 75 50 100 45 30 15 RESISTIVE OR INDUCTIVE LOAD 25 60 125 150 175 Junction Temperature, TJ (°C) 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Fig.13 Safe Operating Area 10 Max 100us Drain Current, I (A) 1ms 1.0 10ms Operation in this area is limited by RDS(ON) 0.1 0.01 DC TJ=150°C TC=25°C Single Pulse 1.0 10 100 1000 Drain-Source Voltage, VDS (V) 2021.06 www.sdjingdao.com Page 6 of 8 山东晶导微电子股份有限公司 D11N20 Jingdao Microelectronics co.LTD TO-252W(D-PAK) Package Outline Dimensions A B C E L1 + D M NN J K T S L2 L b G L3 H G F TO-252W(D-PAK) mechanical data UNIT A max 6.7 B b C D E F 5.5 0.8 2.5 6.3 0.6 1.8 G H L L1 L2 0.55 3.1 1.2 1.0 1.75 0.1 1.0 3.16 1.80 4.83 1.8 1.3 0.8 1.30 0.08 TYPICAL TYPICAL ref. ref. ref. 0.8 0.6 1.00 0.0 6.6 5.3 0.7 2.3 6.1 0.5 min 6.3 5.1 0.3 2.1 5.9 0.4 2.29 0.50 2.8 1.5 TYPICAL 1.3 0.45 2.7 max 264 217 31 98 248 24 71 mil typ 260 209 28 90 240 20 59 min 248 201 12 83 232 16 51 mm typ 90 TYPICAL L3 S 22 122 47 39 69 4 20 110 39 31 51 3 18 106 31 24 55 0 M N 71 51 TYPICAL TYPICAL J 124 ref. K 71 ref. T 190 ref. MARKING DIAGRAM Unmarkable Surfacea C A B Marking Composition Field A: Marking Area B: Lot Code C: Additional Information D D:Date Code (YWW) Y:Years(0~9) WW: Week 2021.06 JD210617 Page 7 of 8 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD D11N20 Important Notice and Disclaimer Jingdao Microelectronics reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. Jingdao Microelectronics makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Jingdao Microelectronics assume any liability for application assistance or customer product design. Jingdao Microelectronics does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Jingdao Microelectronics. Jingdao Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of Jingdao Microelectronics. 2021.06 www.sdjingdao.com Page 8 of 8