2080K

富满微电子集团股份有限公司 2080K(File No.：S&CIC2028) FINE MADE MICROELECTRONICS GROUP CO., LTD. 20V N-channel enhancement mode MOSFET Description General Description Features Extremely Low RDS(on):  The2080K uses advanced trench technology to provide  excellent RDS(ON), low gate charge This device is suitable for use in Load Switch,PWM Application,Power  management and general purpose applications.   Typ.RDS(on) = 3.4mΩ @VGS=4.5 V, Id=30 A Good stability and uniformity 100% avalanche tested Excellent package for good heat dissipation 2080K TO-252(DPAK) top view Marking and pin Assignment Absolute Maximum Ratings Symbol Schematic Diagram (TC=25℃unless otherwise specified) Parameter Max. Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V TC = 25℃ 80 A TC = 100℃ 58 A 240 A 196 mJ TC = 25℃ 88 W Derate above 25℃ 0.54 W/℃ ℃/W ID Continuous Drain Current IDM Pulsed Drain Current EAS PD RθJC TJ, TSTG note1 Single Pulsed Avalanche Energy Power Dissipation note2 Thermal Resistance, Junction to Case Operating and Storage Temperature Range www.superchip.cn 第1页共6页 1.85 -55 to +150 ℃ Version 1.0 富满微电子集团股份有限公司 2080K(File No.：S&CIC2028) FINE MADE MICROELECTRONICS GROUP CO., LTD. Electrical Characteristics Symbol 20V N-channel enhancement mode MOSFET (TJ=25℃unless otherwise specified) Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 20 V IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSSF Gate Leakage Current, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate Leakage Current, Reverse VGS = -12 V, VDS = 0 V -100 nA 0.8 1.2 V VGS=4.5V, ID=30A 3.4 4.5 mΩ VGS=2.5V, ID=20A 4.2 6.0 mΩ VGS(th) RDS(ON) Gate Threshold Voltage VDS=VGS,ID=250μA Drain-Source On-State Resistance 0.4 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 2560 pF 368 pF 356 pF 7.8 nS 30 nS 50 nS 42 nS VDS =10V, ID =30A, 38 nC VGS =4.5V 2.9 nC 15 nC VDS=10V,VGS=0V, f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VDS =10V, ID =30A, VGS =4.5V, RG =1.8Ω Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 3, 4) (Note 3, 4) Source-Drain Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current 80 A IS ISM Maximum Pulsed Drain-Source Diode Forward Current 240 A ISM VSD Diode Forward Voltage 1.2 V VSD Trr Reverse recovery time 18 ns Trr Qrr Reverse recovery charge 8 nC Qrr VGS= 0 V, IS = 30 A IF=30A, di/dt=100A/μS Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.5 mH, VG=4.5V，VDD = 15V, RG = 25 Ω, Starting Tj = 25°C 3. ISD ≤ 30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring Tj =25°C 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.superchip.cn 第2页共6页 Version 1.0 富满微电子集团股份有限公司 2080K(File No.：S&CIC2028) FINE MADE MICROELECTRONICS GROUP CO., LTD. 20V N-channel enhancement mode MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) www.superchip.cn 第3页共6页 Version 1.0 富满微电子集团股份有限公司 2080K(File No.：S&CIC2028) FINE MADE MICROELECTRONICS GROUP CO., LTD. 20V N-channel enhancement mode MOSFET Test www.superchip.cn 第4页共6页 Version 1.0 富满微电子集团股份有限公司 2080K(File No.：S&CIC2028) Circuit FINE MADE MICROELECTRONICS GROUP CO., LTD. 20V N-channel enhancement mode MOSFET EAS Test Circuits: Gate Charge Test Circuit: Switch Time Test Circuit： www.superchip.cn 第5页共6页 Version 1.0 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. 2080K(File No.：S&CIC2028) 20V N-channel enhancement mode MOSFET TO-252 Package Information www.superchip.cn 第6页共6页 Version 1.0