4060K

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 4060K(文件编号：S&CIC1774) N-Channel Trench Power MOSFET Description Features Application  40V,60A  RDS(ON)=6.8mΩ (Typ.) @ VGS = 10V  Load Switch  Hard Switched and High Frequency Circuits  Uninterruptible Power Supply RDS(ON)=9.5mΩ (Typ.) @ VGS = 4.5V  High Density Cell Design for Ultra Low RDS(ON)  Fully Characterized Avalanche Voltage and Current  Good Stability and Uniformity with High EAS  Excellent Package for Good Heat Dissipation Package Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 60 A TC = 100℃ 42 A 210 A 106 mJ 42 W ℃/W ℃ ID Continuous Drain Current IDM Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC TJ, TSTG note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range www.superchip.cn 第1页共7页 2.8 -55 to +175 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 4060K(文件编号：S&CIC1774) N-Channel Trench Power MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units 40 - - V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA IDSS Zero Gate Voltage Drain Current VDS =40V, VGS = 0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS =0V,VGS = ±20V - - ±100 nA Gate Threshold Voltage VDS= VGS, ID=250μA 1.1 1.65 2.4 V Static Drain-Source on-Resistance VGS =10V, ID =30A - 6.8 8 note3 VGS =4.5V, ID =20A - 9.5 12 Forward Transconductance VDS =5V, ID =15A 10 25 - S - 2246 - pF - 195 - pF - 176 - pF - 52 - nC - 8 - nC - 14 - nC - 13 - ns - 37 - ns - 46 - ns - 15 - ns On Characteristics VGS(th) RDS(on) gFS mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS = 20V, VGS =0V, f = 1.0MHz VDS =20V, ID =30A, VGS =10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf V DD=20V, ID =30A, RL=1Ω, RGEN=3Ω, VGS =10V Turn-off Fall Time Drain-Source Diode Characteristics and MaximumRatings IS Maximum Continuous Drain to Source Diode Forward Current - - 60 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 210 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 15 - ns - 8 - nC VGS =0V, IS=30A trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge TJ=25℃, IF=20A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃,VDD=30V,VG=10V, RG=25Ω，L=0.5mH 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% www.superchip.cn 第2页共7页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 4060K(文件编号：S&CIC1774) N-Channel Trench Power MOSFET Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 120 ID (A) 100 ID (A) 100 10V 5V 80 4V 80 60 60 40 3.5V 40 125℃ 0 0 1.0 2.0 VDS(V) VGS=3V 3.0 4.0 5.0 0 1.5 2 Figure 3:On-resistance vs. Drain Current 12 2.5 VGS(V) 1.0E+02 3.5 4 IS(A) 1.0E+01 VGS=4.5V 125℃ 1.0E+00 8 1.0E-01 6 3 Figure 4: Body Diode Characteristics RDS(ON) (mΩ) 10 VGS=10V 25℃ 1.0E-02 4 1.0E-03 2 0 25℃ 20 20 1.0E-04 0 10 20 ID(A) 30 40 50 60 1.0E-05 0.0 Figure 5: Gate Charge Characteristics 8 0.4 VSD(V) 0.6 0.8 1.0 1.2 Figure 6: Capacitance Characteristics VGS(V) 10 0.2 C(pF) VDS=20V ID=30A 10000 Ciss 6 1000 Coss 4 Crss 100 2 0 Qg(nC) 0 8 www.superchip.cn 16 24 32 40 48 10 0 第3页共7页 VDS(V) 5 10 15 20 25 30 35 40 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 4060K(文件编号：S&CIC1774) N-Channel Trench Power MOSFET Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature R DS (on)(mΩ) 2.5 VBR(DSS) (V) 1.3 1.2 2.0 1.1 1.5 1.0 1.0 0.9 0 -100 -50 0 Tj (℃ ) 50 100 150 200 Figure 9: Maximum Safe Operating Area 80 Limited by R DS(on) 100 0 50 100 150 200 ID (A) 60 100μs 10 1ms 50 10ms 40 100ms 30 DC T A =25℃ Single pulse 20 10 VDS (V) 0.1 0.1 -50 70 10μs 1 Tj (℃) Figure 10: Maximum Continuous Drain Current vs. Case Temperature ID (A) 1000 0.5 -100 1 10 100 0 Tc (℃) 0 25 50 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-252,TO-251S) 101 Zth J-C (℃/W) 100 10-1 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse -2 10 10-3 -6 10 10-5 www.superchip.cn 10-4 TP(s) 10-3 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J =P DM *Z thJC +T C 10-2 10-1 100 第4页共7页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 4060K(文件编号：S&CIC1774) N-Channel Trench Power MOSFET Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms www.superchip.cn 第5页共7页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 4060K(文件编号：S&CIC1774) N-Channel Trench Power MOSFET Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) www.superchip.cn 第6页共7页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 4060K(文件编号：S&CIC1774) N-Channel Trench Power MOSFET TO-252 Package Information www.superchip.cn 第7页共7页 Version 1.0