50N06

50N06 ● General Description ● Product Summary The 50N06 combines advanced trench MOSFET D VDS =60V technology with a low resistance package to provide extremely low R DS(ON) .This device is ideal for load switch RDSON(10 V typ) =14mΩ G and battery protection applications. RDSON(4.5V typ) =18mΩ S ● Features ID=50A Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching D Low Thermal resistance 50N06 ●Application TFYXXAA 50N06 MB/VGA Vcore SMPS 2nd Synchronous Rectifier D POL application G BLDC Motor driver TO-252 S ●Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V ID@TC=25℃ 50 A ID@TC=75℃ 35 A ID@TC=100℃ 30 A IDM 104 A Total Power Dissipation(TC=25℃) PD@TC=25℃ 70 W Total Power Dissipation(TA=25℃) PD@TA=25℃ 2.8 W TJ -55 to 150 ℃ TSTG -55 to 150 ℃ IAS IAR 40 A Continuous Drain Current Pulsed Drain Current ① Operating Junction Temperature Storage Temperature Avalanche Current www.cj-elec.com 1/5 50N06 ●Thermal resistance Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 2.8 °C/W Thermal resistance, junction - ambient RthJA - - 55 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C Min. Typ Max. Unit Parameter ●Electronic Characteristics Parameter Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =250uA 60 Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 1.0 Drain-Source Leakage Current IDSS Gate- Source Leakage Current IGSS V 2.2 V VDS=60V, VGS =0V 1.0 uA VGS=±20V, VDS =0V ±100 nA 1.5 VGS=10V, ID=20A 14 21 mΩ VGS=4.5V, ID=15A 18 25 mΩ gFS VDS =25V, ID=10A 20 VSD Is=20A Static Drain-source On Resistance RDS(ON) Forward Transconductance Source-drain voltage S 1.20 V Unit ●Electronic Characteristics Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Condition VDS =25V VGS = 0V f = 1MHz Min. Typ Max. - 1000 - - 108.5 - - 96.9 - pF ●Gate Charge characteristics(Ta= 25℃) Parameter Symbol Condition Min. Typ Max. Total gate charge Qg VDD =25V - 15 - Gate - Source charge Qgs ID = 10A - 4.5 - Gate - Drain charge Qgd VGS = 10V - 7.5 - Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; www.cj-elec.com 2/5 Unit nC 50N06 Fig.2 Typical output Characteristics 1.2 100 VGS=10V 1 Drain Current (A) Power Dissipation Pd/Pd MAX.% Fig.1 Power Dissipation 0.8 0.6 0.4 VGS=4.5V 50 0.2 0 0 0 50 100 150 0 200 Temperature (。C) Fig.3 Threshold Voltage V.S Junction Temperature 2 Fig.4 Resistance V.S Drain Current 30 2.5 ON Resistance 2 Vgs(th ) 0.5 1 1.5 Drain-Source voltage (V) 1.5 1 20 10 0.5 0 0 -50 50 Junction Temperature 0 150 Fig.5 On-Resistance VS Gate Source Voltage 10 20 30 Drain Current(A) 40 Fig.6 On-Resistance V.S Junction Temperature 1.5 Normalized ON-Resistance RDson(mΩ) 30 20 10 1.2 0.9 0.6 0.3 0 3 5 7 VGS( V ) -50 9 www.cj-elec.com 3/5 0 50 100 Temperature 150 50N06 Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform www.cj-elec.com 4/5 50N06 Package Information TO-252 E A E1 c2 L4 H D D1 L3 b3 c b e SEE VIEW A 0 GAUGE PLANE SEATING PLANE 0.25 A1 L S Y M B O L A VIEW A TO-252 RECOMMENDED LAND PATTERN MILLIMETERS INCHES MIN. MAX. MIN. MAX. 2.18 2.39 0.086 0.094 0.005 0.13 A1 b 0.50 0.89 0.020 0.035 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 0.245 D 5.33 6.22 0.210 D1 4.57 6.00 0.180 E 6.35 6.73 0.250 0.236 0.265 E1 3.81 6.00 0.150 0.236 e 2.29 BSC 9.40 10.41 0.370 0.410 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 0 0.040 1.02 0° 6.8 MIN. 6.6 3 MIN. 0.090 BSC H L4 6.25 MIN. 8° 0° 8° www.cj-elec.com 5/5 2.286 1.5 MIN. 4.572 UNIT: mm