KIRFR9024NTRTBF

KIRFR9024NTRTBF P-Channel 60-V(D-S) Enhancement Mode Field Effect Transistor V(BR)DSS -60 V RDS(on)MAX 200mΩ@ -10 V ID Equivalent Circuit: -8.8A General Description: Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFR series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. FEATURE: ※ Surface Mount ※ Straight Lead ※ Available in Tape and Reel ※ Fast Switching ※ Repetitive Avalanche Rated ※ Simple Drive Requirements ※ Lead (Pb)-free Available. ※ Dynamic dV/dt Rating ※ Ultra Low On-Resistance SYMBOL : 1/9 1.GATE 2.DRAIL 3.SOURCF KIRFR9024NTRTBF Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 ID -8.8 IDM -35 Continuous Drain Current Pulsed Diode Curren Unit V A Linear Derating Factor 0.33 W/°C Linear Derating Factor (PCB Mount) 0.02 W/°C PD 50 W Thermal Resistance from Junction to Ambient (t≤10s) RθJA 45 ℃/W Single Pulse Avalanche Energy EAS 300 mJ Repetitive Avalanche Current I AR -8.8 A Repetitive Avalanche Energy EAR 5.0 mJ Peak Diode Recovery dV/dt dV/dt -4.5 V/ns Maximum Junction-to-Ambient RthJA 110 ℃/W TJ 150 TSTG -55~+155 Power Dissipation Operating Junction Storage Temperature Notes ： 1.Repetitive rating; pulse width limited by maximum junction temperature 2.VDD = 25 V, starting TJ = 25 °C, L = 4.5 µH, RG = 25 Ω, IAS = -8.8 A 3.ISD ≤ -11 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. 4.1.6 mm from case. 5.When mounted on 1" square PCB (FR-4 or G-10 material). 2/9 ℃ KIRFR9024NTRTBF MOSFET ELECTRICAL CHARACTERISTICS Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID = - 250µA -60 VGS(th) VDS =VGS, ID = -250µA -2 Gate-source threshold voltage V -4 V Gate-source leakage IGSS VDS =0V, VGS = ±20V ±100 nA Zero gate voltage drain current IDSS VDS = -60V, VGS =0V -100 µA 200 mΩ Drain-source on-state resistancea RDS(on) VGS = -10V, ID = -5.3A Forward transconductancea gfs VDS = -25V, ID = -5.3A Diode forward voltage VSD IS= -7.2A, VGS=0V 75 2.9 S -1.8 V Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitanceb Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg VDS = -25V, VGS =0V, f=1MHz 570 pF 360 pF 65 pF VDS = -48V, VGS = 10V, ID = -11A 19 nC 5.4 nC 11 nC f=1MHz Ω Switchingb Turn-on delay time td(on) tr Rise time Turn-off delay time td(off) VDD= -30V RD=3Ω, ID = -11A, VGEN= -10V,Rg= 18Ω tf Fall time Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact 13 ns 68 ns 15 ns 29 ns 4.5 nH 7.5 nH Drain-Source Diode Characteristics Reverse Recovery Time trr IF= -11A, dl/dt=100A/s 100 200 ns Reverse Recovery Charde Qrr IF= -11A, dl/dt=100A/s 0.32 0.64 µC -8.8 A -35 A Continuous Source-Drain Diode Current Pulsed Diode Forward Current IS ISM MOSFET symbol showing the integral reverse p - n junction diode 3/9 KIRFR9024NTRTBF TYPICAL CHARACTERISTICS : 4/9 KIRFR9024NTRTBF TYPICAL CHARACTERISTICS : 5/9 KIRFR9024NTRTBF TYPICAL CHARACTERISTICS : 6/9 KIRFR9024NTRTBF TYPICAL CHARACTERISTICS : 7/9 KIRFR9024NTRTBF TYPICAL CHARACTERISTICS : 8/9 KIRFR9024NTRTBF PACKAGE OUTLINE DIMENSIONS : 9/9