SL15N10A

SL15N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS= 10V) ● RDS(ON)( at VGS= 4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 100V 15A ＜115mohm ＜1 0mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 100 V Gate-source Voltage VGS ±20 V Drain Current TC=25℃ ID TC=100℃ 15 10.5 Unit A Pulsed Drain Current A IDM 60 A Single Pulse Avalanche Energy B EAS 9 mJ 34 W 17 W RθJC 4.4 ℃/ W TJ ,TSTG -55～+175 ℃ TC=25℃ Total Power Dissipation PD TC=100℃ Thermal Resistance Junction-to-Case C Junction and Storage Temperature Range www.slkormicro.com 1 SL15N10A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V 1 μA IGSS VGS= ±20V, VDS=0V ±100 nA VGS(th) VDS= VGS, ID=250μA 1.8 3.0 V VGS= 10V, ID=8A 68 115 VGS= 4.5V, ID=8A 75 1 0 IS=15A,VGS=0V 0.8 1.2 V 15 A Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage Maximum Body-Diode Continuous Current 100 1.1 V RDS(ON) mΩ VSD IS Dynamic Parameters 1070 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 30 Total Gate Charge Qg 26 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Charge Qrr VDS=50V,VGS=0V,f=1MHZ 33 pF Switching Parameters VGS=10V,VDS=50V,ID=10A 5.4 nC 5.8 30.1 IF=10A, di/dt=100A/us Reverse Recovery Time trr 40 Turn-on Delay Time tD(on) 7 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time VGS=10V,VDD=50V,RL=6.4Ω RGEN=3Ω tf 24 ns 24 31 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper www.slkormicro.com 2 SL15N10A ■ Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance vs. Junction Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge www.slkormicro.com 3 SL15N10A Figure 7. Safe Operation Area Figure 8. Maximum Continuous Drain Current vs Case Temperature Figure 9. Normalized Maximum Transient Thermal Impedance www.slkormicro.com 4 SL15N10A ■ TO 252 Package information www.slkormicro.com 5