SL10N06A

SL10N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 60V 10A ＜35 mohm ＜45 mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V Drain Current ID 10 A Pulsed Drain Current A IDM 33 A Total Power Dissipation @ TC=25℃ PD 1.2 W RθJA 105 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Ambient B Junction and Storage Temperature Range www.slkormicro.com 1 Unit SL10N06A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 μA Gate-Body Leakage Current IGSS1 VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.7 2.5 V 30 35 Static Drain-Source On-Resistance RDS(ON) Static Parameter VGS= 10V, ID=5A Diode Forward Voltage Maximum Body-Diode Continuous Current 1.0 V mΩ VSD VGS= 4.5V, ID=4A 35 45 IS=5A,VGS=0V 0.8 1.2 V 3.0 A IS Dynamic Parameters Input Capacitance Ciss 1018 Output Capacitance Coss Reverse Transfer Capacitance Crss 62 Total Gate Charge Qg 26 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Charge Qrr VDS=30V,VGS=0V,f=1MHZ 70 pF Switching Parameters VGS=10V,VDS=30V,ID=10A 5.4 nC 6.5 11.7 IF=20A, di/dt=500A/us Reverse Recovery Time trr 23 Turn-on Delay Time tD(on) 10 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time www.slkormicro.com VGS=10V,VDD=30V, ID=2A,RL=1Ω RGEN=3Ω tf 20 29 22 2 ns SL10N06A ■ Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance vs. Junction Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge www.slkormicro.com 3 SL10N06A Figure 8. Maximum Continuous Drain Current vs Case Temperature Figure 7. Safe Operation Area www.slkormicro.com 4 SL10N06A ■ SOT-223 Package information Symbol A A1 A2 b b1 c D E E1 e L θ ■ SOT-223 Suggested Pad Layout www.slkormicro.com 5 Dimensions In Millimeters Min. Max. —— 1.800 0.020 0.100 1.500 1.700 0.660 0.840 2.900 3.100 0.230 0.350 6.300 6.700 6.700 7.300 3.300 3.700 2.300(BSC) 0.750 —— 0° 10° Dimensions In Inches Min. Max. —— 0.071 0.001 0.004 0.059 0.067 0.026 0.033 0.114 0.122 0.009 0.014 0.248 0.264 0.264 0.287 0.130 0.146 0.091(BSC) 0.030 —— 0° 10°