SL80N03

SL80N03 N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS= 10V) ● RDS(ON)( at VGS= 5V) 30V 80A ＜6.5mohm ＜10mohm Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 30 V Gate-source Voltage VGS ±20 V Drain Current ID 80 A Pulsed Drain Current A IDM 170 A Single Pulse Avalanche Energy B EAS 306 mJ Total Power Dissipation PD 83 W RθJC 1.74 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Case Junction and Storage Temperature Range www.slkormicro.com 1 Unit SL80N03 ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter 30 Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.6 2.5 V VGS= 10V, ID=30A 4.5 6.5 Static Drain-Source On-Resistance RDS(ON) VGS= 5V, ID=24A 6.8 10 Diode Forward Voltage Maximum Body-Diode Continuous Current 1.0 V mΩ IS=24A,VGS=0V VSD IS 1.3 V 80 A Dynamic Parameters 2015 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 230 Total Gate Charge Qg 61 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Charge Qrr VDS=15V,VGS=0V,f=1MHZ 250 pF Switching Parameters VGS=10V,VDS=10V,ID=30A 8.2 nC 7.8 32 IF=80A, di/dt=100A/us trr 12 Turn-on Delay Time tD(on) 20 Turn-on Rise Time tr Turn-off Delay Time tD(off) 60 tf 10 Reverse Recovery Time Turn-off fall Time A. B. VGS=10V,VDD=10V,RG=2.7Ω , ID =30A Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω，IAS=35A www.slkormicro.com 2 15 ns SL80N03 ID- Drain Current (A) Normalized On-Resistance ■ Typical Performance Characteristics TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 2 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 3 Transfer Characteristics Figure 4 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance Normalized Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 5 Rdson- Drain Current www.slkormicro.com Figure 6 Source- Drain Diode Forward 3 Normalized BVdss C Capacitance (pF) SL80N03 TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 8 BVDSS vs Junction Temperature ID- Drain Current (A) Vds Drain-Source Voltage (V) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 9 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature www.slkormicro.com 4 SL80N03 ■ TO-252 Package information www.slkormicro.com 5