SL100N03

SL100N03 N-Channel Enhancement Mode Field Effect Transistor D Features • Excellent package for good heat dissipation D1 • Ultra low gate charge S1 D2 • Low reverse transfer capacitance • Fast switching capability D • Avalanche energy specified G Application S TO-252 top view Schematic diagram D • Power switching application Product Summary VDS RDS(ON)@10V,MAX 30 V 3.5 mΩ ID 100 A D S G Marking and pin assignment Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDS Drain-Source Breakdown Voltage 30 V VGS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -50 to 155 °C IS Diode Continuous Forward Current Tc=25°C 100 A Mounted on Large Heat Sink IDM Pulse Drain Current Tested Tc=25°C 400 A ID Continuous Drain Current@GS=10V Tc=25°C 100 A PD Maximum Power Dissipation Tc=25°C 54 W 100 mJ EAS www.slkormicro.com 0 Single pulse avalanche energy 1 SL100N03 Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Condition Min Typ Max Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Unit BV(BR)DSS Drain-Source Breakdown Voltage VGS=0V，ID=250μA 30 -- -- V IDSS Zero Gate Voltage Drain Current VDS=30V，VGS=0V -- -- 1 uA IGSS Gate-Body Leakage Current VGS=±20V，VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250μA 1 -- 3 V VGS=10V， ID=40A -- 3 3.5 RDS(on) Drain-Source On-State Resistance VGS=4.5V，ID=30A -- 5 6.5 mΩ Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS=30V，VGS=0V， f=1MHz -- 2550 -- pF -- 380 -- pF -- 290 -- pF -- 53 -- nC -- 9 -- nC Switching Characteristics Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge -- 13 -- nC td(on) Turn-on Delay Time -- 17 -- nS tr Turn-on Rise Time -- 43 -- nS td(off) Turn-Off Delay Time -- 110 -- nS tf Turn-Off Fall Time -- 105 -- nS -- -- 1.2 V VDD=15V，ID=30A， VGS=10V VDD=15V，ID=30A， VGS=10V，RG=12Ω Source- Drain Diode Characteristics VSD Forward on voltage www.slkormicro.com Tj=25℃，Is=40A， 2 SL100N03 Typical Operating Characteristics VGS, Gate-Source Voltage (V) 6V ID, Drain-Source Current (A) 10V 3.5V 3V Qg -Total Gate Charge (nC) Fig2. Typical Gate Charge Vs.Gate-Source Voltage Normalized On Resistance On Resistance(mΩ ) VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics ID, Drain-Source Current (A) Fig4. On-Resistance Vs. Drain-Source Current Capacitance (pF) -ID - Drain Current (A) Tj - Junction Temperature (°C) Fig3. Normalized On-Resistance Vs. Temperature VDS, Drain -Source Voltage (V) Fig7. Maximum Safe Operating Area www.slkormicro.com VDS , Drain-Source Voltage (V) Fig6 Typical Capacitance Vs.Drain-Source Voltage 3 SL100N03 TO-252 Package information www.slkormicro.com 4