D5N65

山东晶导微电子股份有限公司 D5N65 Jingdao Microelectronics co.LTD 5A, 650V N-CHANNEL POWER MOSFET TO-252W DESCRIPTION The D5N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. PIN1 PIN2 PIN3 Features • RDS(ON) ≤ 2.1 Ω @ VGS=10V, ID=2,5A • Fast switching capability • Avalanche energy tested • Improved dv/dt capability, high ruggedness SYMBOL 2.4.Drain Mechanical data • Case: TO-252W • A pprox. Weight: 0.315g ( 0.011oz) • Lead free finish, RoHS compliant • Case Material: “Green” molding compound, UL flammability classification 94V-0,“Halogen-free”. 1.Gate 3.Source ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Symbols RATINGS Units Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V 5 A 3.2 A Tc=25℃ ID Continuous Drain Current Tc=100℃ Pulsed Drain Current (Note 2) I DM 20 A Avalanche Energy E AS 310 mJ dv/dt 2.1 V/ns PD 54 W Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) Power Dissipation Operation Junction Temperature and Storage Temperature T j, T stg -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 30mH, IAS = 3.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Symbols RATINGS Units Junction to Ambient R thJA 63 °C/W Junction to Case R thJC 2.5 °C/W 2021.12 TO-252W-MOS-D5N65-5A650V Page 1 of 8 山东晶导微电子股份有限公司 D5N65 Jingdao Microelectronics co.LTD ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) Symbols PARAMETER TEST CONDITIONS Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current BV DSS VGS=0V,ID=250uA I DSS VDS=650V,VGS=0V 1 VGS=30V,VDS=0V 100 VGS=-30V,VDS=0V -100 Forward I GSS Gate- Source Leakage Current Reverse V 650 uA nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS,ID=250uA Static Drain-Source On-State Resistance RDS(ON) VGS=10V,ID=2.5A 2.0 1.8 4.0 V 2.1 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, 870 pF Output Capacitance COSS VGS=0V, 104 pF Reverse Transfer Capacitance CRSS f=1.0MHz 13 pF QG VDS=480V,VGS=10V, 14 nC Gate-Source Charge QGS ID=10A,IG=1mA 4 nC Gate-Drain Charge QGD (NOTE1,2) 2 nC tD(ON) VDS=100V,VGS=10V, 8 ns ID=5A,RG=25Ω 16 ns (NOTE1,2) 36 ns 10 ns SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) Turn-On Delay Time (Note 1) Turn-On Rise Time tR Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS 5 A Maximum Body-Diode Pulsed Current ISM 20 A Drain-Source Diode Forward Voltage (Note 1) VSD IS=5A,VGS=0V 1.4 V trr IS=5A,VGS=0V, 180 ns Qrr di/dt=100A/us 1.9 uC Maximum Body-Diode Continuous Current Reverse Recovery Time (Note 1) Reverse Recovery Charge Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. 2021.12 www.sdjingdao.com Page 2 of 8 山东晶导微电子股份有限公司 D5N65 Jingdao Microelectronics co.LTD Test Circuits and waveforms + D.U.T VDS + ISD - RG VGS Driver VDD *dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T Peak Diode Recovery dv/dt Test Circuit Period VGS (Driver) D= P.W P.W Period VGS=10V IFM,Body Diode Forward Current di/dt ISD (D.U.T) IRM Body Diode Reverse Current Body Diode Reverse Current VDS (D.U.T) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms 2021.12 www.sdjingdao.com Page 3 of 8 山东晶导微电子股份有限公司 D5N65 Jingdao Microelectronics co.LTD Test Circuits and waveforms RL VDS VDS 90% VGS RG VDD 10% VGS Pulse Width≤ 1μs Duty Factor≤0.1% D.U.T tD(ON) Switching Test Circuit tD(OFF) tR tF Switching Waveforms VGS QG Same Type as D.U.T QGS QGD VDS VGS D.U.T Charge Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD ID(t) VDD tP VDS(t) VDD D.U.T tP Unclamped Inductive Switching Test Circuit 2021.12 Time Unclamped Inductive Switching Waveforms www.sdjingdao.com Page 4 of 8 山东晶导微电子股份有限公司 D5N65 Jingdao Microelectronics co.LTD Typical Characteristics Fig.1 Drain Current vs. Gate-Source Voltage Fig.2 Drain-Source On-Resistance vs. Gate-Source Voltage 6 6 Drain Current, ID (A) 5 Drain-Source On-Resistance, RDS(ON) (Ω) TA=25°C Pulsed test VGS=6~10V 4 VGS=5.5V 3 2 VGS=5V 1 VGS=4.5V 0 0 2 4 6 8 10 12 TA=25°C Pulsed test 5 4 3 ID=5.0A 2 ID=2.5A 1 0 0 14 2 6 4 Drain-Source Voltage, VDS (V) 8 10 12 14 Gate-Source Voltage, VGS (V) Fig.4 Capacitance Characteristics Fig.3 Gate Charge Characteristics VDS=520V VGS=10V ID=4A Pulsed CISS 8.0 Capacitance, C (pF) Gate-Source Voltage, VGS (V) 1000 10 6.0 4.0 100 COSS 10 CRSS 2.0 0.0 0 2 4 6 8 10 12 14 5.0 10 Total Gate Charge, QG (nC) Fig.5 Drain-Source On-Resistance vs. Junction Temperature 25 30 35 40 45 50 Fig.6 Breakdown Voltage vs. Junction Temperature Drain-Source Breakdown Voltage Normalized Drain-Source On-Resistance Normalized 20 1.2 6 5 15 Drain-Source Voltage, VDS (V) VGS=10V ID=.0A Pulsed 4 3 2 1 0 25 50 75 100 125 150 ID=0.25mA Pulsed 1.0 0.8 0.6 0.4 0.2 0 25 175 Junction Temperature, TJ (°C) 75 50 100 125 150 175 Junction Temperature, TJ (°C) Fig.8 Source Current vs. Source-Drain Voltage Fig.7 Gate Threshold Voltage vs. Junction Temperature 10 0.5 0.25 °C 25 °C 0 1.0 A= T 0.1 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 Source-Drain Voltage, VSD (V) Junction Temperature, TJ (°C) 2021.12 15 0.75 A= 1.0 T Source Current, IS (A) Gate Threshold Voltage Normalized ID=0.25mA Pulsed 1.25 www.sdjingdao.com Page 5 of 8 山东晶导微电子股份有限公司 D5N65 Jingdao Microelectronics co.LTD Typical Characteristics Fig.9 Drain Current vs. Gate-Source Voltage Fig.10 Drain-Source On-Resistance vs. Drain Current TA=25°C Pulsed 5 Drain Current, ID (A) Drain-Source On-Resistance, RDS(ON) (Ω) 4.0 4 3 2 1 0 1 3 2 4 5 6 TA=25°C VGS=10V Pulsed 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1 7 2 Junction Temperature, TJ (°C) 3 4 5 6 7 Drain Current, ID (A) Fig.12 Power Dissipation vs. Junction Temperature Fig.11 Drain Current vs. Junction Temperature 5.0 Power Dissipation, PD (W) Drain Current, ID (A) 50 4.0 3.0 2.0 1.0 40 30 20 10 RESISTIVE OR INDUCTIVE LOAD 0.0 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Fig.13 Safe Operating Area 100 Operation in this area is limited by RDS(ON) 100us Drain Current, I (A) 10 1ms 10ms 1.0 DC 0.1 TC=25°C 0.01 0 10 100 1000 Drain-Source Voltage, VDS (V) 2021.12 www.sdjingdao.com Page 6 of 8 山东晶导微电子股份有限公司 D5N65 Jingdao Microelectronics co.LTD TO-252W(D-PAK) Package Outline Dimensions A B C E L1 + D M NN J K T S L2 L b G L3 H G F TO-252W(D-PAK) mechanical data UNIT A max 6.7 B b C D E F 5.5 0.8 2.5 6.3 0.6 1.8 G H L L1 L2 0.55 3.1 1.2 1.0 1.75 0.23 1.0 3.16 1.80 4.83 1.8 1.3 0.6 1.30 0.15 TYPICAL TYPICAL ref. ref. ref. 0.8 0.6 1.00 0.0 6.6 5.3 0.7 2.3 6.1 0.5 min 6.3 5.1 0.3 2.1 5.9 0.4 2.29 0.50 2.5 1.5 TYPICAL 1.3 0.45 2.7 max 264 217 31 98 248 24 71 mil typ 260 209 28 90 240 20 59 min 248 201 12 83 232 16 51 mm typ 90 TYPICAL L3 S 22 122 47 39 69 9 20 98 39 24 51 6 18 106 31 24 55 0 M N 71 51 TYPICAL TYPICAL J 124 ref. K 71 ref. T 190 ref. MARKING DIAGRAM Unmarkable Surfacea C A B Marking Composition Field A: Marking Area B: Lot Code C: Additional Information D D:Date Code (YWW) Y:Years(0~9) WW: Week 2021.12 JD211206 Page 7 of 8 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD D5N65 Important Notice and Disclaimer Jingdao Microelectronics reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. Jingdao Microelectronics makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Jingdao Microelectronics assume any liability for application assistance or customer product design. Jingdao Microelectronics does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Jingdao Microelectronics. Jingdao Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of Jingdao Microelectronics. 2021.12 www.sdjingdao.com Page 8 of 8