TF30P02

Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET TF30P02 ● Product Summary ● General Description The TF30P02 combines advanced trench MOSFET VDS =-20V ID=-30A D technology with a low resistance package to provide RDSON(-4.5V typ) =12.0mΩ G extremely low RDS(ON) . RDSON(-2.5V typ) =16.0mΩ S ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss D Low Gate Charge for fast switching Low Thermal resistance D 30P02 TFYXXAA ●Application 30P02 TFYXXAA Load Switches D DC/DC G BLDC Motor driver D S TO-251 G S TO-252 ●Ordering Information: Part NO. TF30P02 Marking1 30N02:TF30P02 Marking2 TF:tuofeng; Y:year code; XX:Week; AA:device code; Basic ordering unit (pcs) 2500 ●Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V ID@TC=25℃ -30 A ID@TC=75℃ -21 A ID @TC=100℃ -18 A Pulsed Drain Current ① IDM -65 A Total Power Dissipation② PD 15 W PD@TA=25℃ 1.0 W TJ -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy@L=0.1mH EAS 45 mJ Avalanche Current@L=0.1mH IAS -30 A Continuous Drain Current Total Power Dissipation(TA=25℃) Operating Junction Temperature www.sztuofeng.com 1 Feb 2022 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET TF30P02 ●Thermal resistance Symbol Min. Typ. Max. Unit Thermal resistance, junction - case② RthJC - - 4.5 °C/W Thermal resistance, junction - ambient RthJA - - 62.5 °C/W Soldering temperature, wave soldering for 10s Tsold - - 265 °C Typ Max. Unit Parameter ●Electronic Characteristics Parameter Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =-250uA Gate Threshold Voltage VGS(TH) VGS =V DS, ID =-250uA Drain-Source Leakage Current IDSS Gate- Source Leakage Current IGSS Static Drain-source On Resistance RDS(ON) Forward Transconductance Source-drain voltage Min. -20 V -1.00 V VDS=-20V, VGS =0V -1.0 uA VGS=±12V ,VDS =0V ±100 nA -0.45 -0.70 VGS=-4.5V, ID=-15A 12.0 15.0 mΩ VGS=-2.5V, ID=-10A 16.0 20.0 mΩ gFS VDS =-10V, ID=-10A 10 VSD Is=-10A 0.88 s 1.28 V ●Electronic Characteristics Parameter Input capacitance Output capacitance Symbol Condition Ciss Typ Max. - 1545 - - 168.7 - - 148.1 - Unit VGS=0V, VDS=-10V Coss f = 1MHz Reverse transfer capacitance Min. Crss pF ●Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Total gate charge Qg VDD =-10V - 24.5 - Gate - Source charge Qgs ID = -10A - 3.69 - Gate - Drain charge Qgd VGS = -4.5V - 4.58 - Unit nC Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; ② Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate； www.sztuofeng.com 2 Feb 2022 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET TF30P02 Fig.1 Gate-Charge Characteristics Fig.2 Capacitance Characteristics 4.5 4000 4 3.5 3000 3 2000 Ciss 2.5 -VGS 2 1000 1.5 200 Coss Crss 1 100 0.5 0 10 5 0 10 15 20 25 15 10 Fig.3 Typical output Characteristics 1.2 200 1 Drain Current (A) Power Dissipation Pd/Pd MAX.% Fig.2 Power Dissipation 0.8 0.6 0.4 150 VGS=-4.5V 100 VGS=-2.5V 50 0.2 0 0 0 0 50 100 150 Temperature (。C) 200 Fig.4 Threshold Voltage V.S Junction Temperature -50 Junction Temperature 50 0.5 1 1.5 Drain-Source voltage (V) 2 Fig.5 Resistance V.S Drain Current 25 150 ON Resistance 0 Vgs(th )d 5 0 -0.5 20 15 10 5 0 0 -1 www.sztuofeng.com 3 5 10 15 Drain Current(A) 20 Feb 2022 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET TF30P02 Fig.6 On-Resistance VS Gate Source Voltage Fig.7 On-Resistance V.S Junction Temperature Normalized ON-Resistance 25 RDson(mΩ) 20 15 10 0 1 2 3 VGS( -V ) 4 5 Fig.8 Switching Time Measurement Circuit 1.2 0.8 0.4 -50 0 50 100 Temperature 150 Fig.9 Gate Charge Waveform Fig.10 Switching Time Measurement Circuit www.sztuofeng.com 1.6 Fig.11 Gate Charge Waveform 4 Feb 2022 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET TF30P02 Package Information TO-252 E A E1 c2 L4 H D D1 L3 b3 c b e SEE VIEW A 0 GAUGE PLANE SEATING PLANE 0.25 A1 L S Y M B O L A TO-252 RECOMMENDED LAND PATTERN MILLIMETERS MIN. 2.18 INCHES MAX. MIN. MAX. 2.39 0.086 0.094 0.50 0.89 0.020 0.035 0.215 b3 4.95 5.46 0.195 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 0.245 D 5.33 6.22 0.210 D1 4.57 6.00 0.180 E 6.35 6.73 0.250 0.236 0.265 E1 3.81 6.00 0.150 0.236 e 9.40 10.41 0.370 0.410 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 0 0.040 1.02 0° www.sztuofeng.com 6.8 MIN. 6.6 3 MIN. 0.090 BSC 2.29 BSC H L4 6.25 MIN. 0.005 0.13 A1 b VIEW A 8° 0° 8° 5 2.286 1.5 MIN. 4.572 UNIT: mm Feb 2022 V1.0