MBR0530

MBR0520-MBR0580 Schottky Barrier Diode REVERSE VOLTAGE: 20 - 80 V CURRENT: 0.5 A SOD-123FL Features
F Low forward surge current Ideal for surface mouted applications Low leakage current


Case:JEDEC SOD-123FL,molded plastic over passivated chip
Polarity: Color band denotes cathode end Weight: 0.0008 ounces, 0.022 gram Mounting position: Any
Symbol IO *1 0.008(0.20) 0.004(0.10) 0.030(0.76) 0.018(0.45) 0.154(3.9) 0.138(3.5) Dimensions in inches and(millimeters) Absolute Maximum Ratings （Ta = 25 ℃） VRRM VRMS 0.114(2.9) 0.098(2.5) 0.047(1.19) 0.043(1.09) Mechanical Data
0.043(1.09) 0.035(0.89) 0.075(1.90) 0.067(1.70) Parameter Value Maximum recurrent peak reverse voltage Maximum RMS voltage Units 20 30 40 60 80 14 21 28 42 56 Continuous Forward Current V 0.5 A 15 A 410 mW IFSM Non-repetitive Peak Forward Surge Current Pd Power Dissipation TJ TSTG Operating temperature range -55 to +175 ℃ Storage Temperature -55 to +150 ℃ *1 8.3 ms single half sine-wave Electrical Characteristics （Ta = 25 ℃） Device Symbol Parameter Conditions Min Typ Max MBR0520 0.45 MBR0530 0.55 MBR0540 VF Forward Voltage IF =0.5A 0.55 MBR0560 0.70 MBR0580 0.80 MBR0520 VR=20V MBR0530 VR=30V MBR0540 IR Reverse Current VR=40V MBR0560 VR=60V MBR0580 VR=80V MBR series CT Capacitance ht t p : // Revision:20170701-P1 VR = 4V, f = 1MHz www.lgesem i .c o m 20 30 Units V μA pF mail:lge@lgesemi.com MBR0520-MBR0580 Schottky Barrier Diode Typical Characteristics Forward 1 Characteristics Reverse Characteristics 1000 REVERSE CURRENT IR o C 0.2 a T =2 5 =1 00 0.01 0.0 a 0.1 T FORWARD CURRENT o C IF (uA) (A) o 0.4 0.6 FORWARD VOLTAGE VF 100 10 1 o Ta=25 C 0.1 0.8 0 10 (V) 20 30 40 REVERSE VOLTAGE Capacitance Characteristics 60 Ta=100 C 50 VR 60 (V) Power Derating Curve 500 (mW) 40 PD f=1MHz 50 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 30 20 10 0 0 2 4 6 8 10 12 REVERSE VOLTAGE 14 VR ht t p : // Revision:20170701-P1 16 (V) 18 20 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE URE www.lgesem i .c o m 100 Ta 125 (℃) mail:lge@lgesemi.com