XB6206M

XB6206M One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION  The XB6206M product is a high integrati -on solution for lithium-ion/polymer battery protection. XB6206M contains advanced p -ower MOSFET, high-accuracy voltage det -ection circuits and delay circuits. XB6206 M is put into an ultra-small DFN3x3-10 pac -kage and only one external component makes it an ideal solution in limited space of battery pack. XB6206M has all the protection functions required in the battery application including overcharging, overdischarging, overcurrent and load short circuiting protection etc. The accurate overcharging detection voltage en -sures safe and full utilization charging. The low standby current drains little current from the cell while in storage. The device is not only targeted for digital cellular phones, but also for any other Li-Io -n and Li-Poly battery-powered information appliances requiring long-term battery life.            APPLICATIONS One-Cell Lithium-ion Battery Pack Lithium-Polymer Battery Pack Power Bank FEATURES   Integrated Advanced Power MOSFET with Equivalent of 9.5 mΩ RSS(ON) Ultra-small DFN3x3-10 Package Only One External Capacitor Require Over-temperature Protection Overcharge Current Protection Two-step Overcurrent Detection -Overdischarge Current 1 -Load Short Circuiting Low Current Consumption -Operation Mode: 7µA typ -Power-down Mode:4µA typ Charger Detection Function 0V Battery Charging Function Delay Times are generated inside High-accuracy Voltage Detection RoHS Compliant and Lead (Pb) Free Protection of Charger Reverse Connec -tion Protection of Battery Cell Reverse Con -nection without external load CHARGER+ R1 470Ω VDD BAT+ C1 0.1uF BAT- 1 10 VM GND 2 9 VM GND 3 8 VM GND 4 7 VM 6 VM GND 5 EPAD CHARGER- Figure 1. Typical Application Circuit -1Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.2 XB6206M ORDERING INFORMATION PART NUMBER OCV [VCU] (V) OCRV [VCL] (V) ODV [VDL] (V) ODRV [VDR] (V) XB6206M 4.475±50mV 4.30±50mV 2.4±100mV 3.0±100mV TOP MARK XB6206MYW (note) Note: “YW” is manufacture date code, “Y” means the year, “W” means the week. PIN CONFIGURATION VDD 1 10 VM GND 2 9 VM GND 3 8 VM GND 4 7 VM GND 5 6 VM EPAD TOP View Figure 2. PIN Configuration PIN DESCRIPTION XB6206M PIN NUMBER PIN NAME 1 VDD Power Supply. 2,3,4,5 GND Ground, connect the negative terminal of the battery to these pins. 6,7,8,9,10 VM 11 EPAD PIN DESCRIPTION The negative terminal of the battery pack. The internal FET switch connects this terminal to GND. Exposed pad,please connect with GND of XB6206M -2Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.2 XB6206M ABSOLUTE MAXIMUM RATINGS (NOTE: DO NOT EXCEED THESE LIMITS TO PREVENT DAMAGE TO THE DEVICE. EXPOSURE TO ABSOLUTE MAXIMUM RATING CONDITIONS FOR LONG PERIODS MAY AFFECT DEVICE RELIABILITY.) PARAMETER VALUE UNIT VDD input pin voltage -0.3 to 6 V VM input pin voltage -6 to 10 V Operating Ambient Temperature -40 to 85 °C Maximum Junction Temperature 125 °C -55 to 150 °C Lead Temperature ( Soldering, 10 sec) 300 °C Power Dissipation at T=25°C 0.4 W Package Thermal Resistance (Junction to Ambient) θJA 250 °C/W Package Thermal Resistance (Junction to Case) θJC 130 °C/W HBM ESD 2000 V Storage Temperature -3Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.2 XB6206M ELECTRICAL CHARACTERISTICS ˚C unless otherwise specified. PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Detection Current Overdischarge Current Detection *I V =3.6V 12.5 18 23 A Overdischarge Current Recovery *I V =3.6V 30 50 80 µA Overcharge Current Detection *I V =3.6V 10 14 18 A Load Short-Circuiting Detection *I V =3.6V 30 60 80 A V =3.6V VM pin floating 7 10 µA V =2.0V VM pin floating 4 6 µA 100 150 200 k 7 12 18 k 9.5 11.5 m Current Consumption Current Consumption in Normal Operation I I Current Consumption in Power Down VM Internal Resistance Internal Resistance between VM and V R V =3.6V VM=1.0V Internal Resistance between VM and GND R V =3.6V VM pin floating FET on Resistance Equivalent FET on Resistance V *R =3.6V I =1.0A Over Temperature Protection Over Temperature Protection *T 150 ˚C Over Temperature Recovery Degree *T 110 ˚C Detection Delay Time Overcharge Voltage Detection DelayTime t 80 130 180 mS Overdischarge Voltage Detection Delay Time t 20 40 60 mS Overdischarge Current1 Detection Delay Time t V =3.6V 5 10 20 mS Overcharge Current Detection Delay Time t V =3.6V 5 10 20 mS *t V =3.6V 180 380 600 µS Load Short-Circuiting Detection Delay Time Note1: *---The parameter is guaranteed by design. -4Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.2 XB6206M FUNCTIONAL BLOCK DIAGRAM GND VDD Voltage divider - + POR Overcharge Current Comp - + - + Overdischarge Voltage Comp OSC Overcharge Voltage Comp Logic Contoller Short circuit Comp + - OTP Over discharge Current Comp Switch + - REF VM VM Figure 3. Functional Block Diagram FUNCTIONAL DESCRIPTION The XB6206M monitors the voltage and current of a battery and protects it from bei -ng damaged due to overcharge voltage, ov -erdischarge voltage, overdischarge curren -t, and short circuit conditions by disconnec -ting the battery from the load or charger. T -hese functions are required in order to ope -rate the battery cell within specified limits. The device requires only one external capa citor. The MOSFET is integrated and its R SS(ON) is as low as 9.5 mΩ typical. n and the state continues for the overcharg -e detection delay time (tCU) or longer, the X B6206M turns the charging control FET off to stop charging. This condition is called the overcharge condition. The overcharge co -ndition is released in the following two cas -es: 1. When the battery voltage drops below the overcharge release voltage (VCL), the X B6206M turns the charging control FET on and returns to the normal condition. 2. When a load is connected and dischar -ging starts, the XB6206M turns the charging control FET on and returns to the norma -l condition. The release mechanism is as f -ollows: the discharging current flows throu -gh an internal parasitic diode of the chargi -ng FET immediately after a load is connec -ted and discharging starts, and the VM pin voltage increases about 0.7 V (forward volt -age of the diode) from the GND pin voltage momentarily. The XB6206M detects this voltage and releases the overcharge condit -ion. Consequently, in the case that the bat Normal Mode If no exception condition is detected, charging and discharging can be carried out freely. This condition is called the normal o -perating mode. Overcharge Condition When the battery voltage becomes highe -r than the overcharge detection voltage (V CU) during charging under normal conditio-5Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.2 XB6206M -tery voltage is equal to or lower than the o -vercharge detection voltage (VCU), the XB6 206M returns to the normal condition imme -diately, but in the case the battery voltage is higher than the overcharge detection volt -age (VCU),the chip does not return to the normal condition until the battery voltage dro -ps below the overcharge detection voltage (VCU) even if the load is connected. In additi -on, if the VM pin voltage is equal to or lower than the overcurrent 1 detection voltage when a load is connected and discharging starts, the chip does not return to the normal condition. the overdischarge and power-down conditions. The power-down condition is released when a charger is connected and the potenti -al difference between VM and VDD becomes 1.3 V (typ.) or higher (load short-circui -ting detection voltage). At this time, the FE T is still off. When the battery voltage becomes the overdischarge detection voltage(V DL) or higher (see note), the XB6206M turns the FET on and changes to the normal c -ondition from the overdischarge condition. Remark If the VM pin voltage is no less than the charger d -etection voltage (VCHA), when the battery under ove -rdischarge condition is connected to a charger, the overdischarge condition is released (the discharging control FET is turned on) as usual, provided that t -he battery voltage reaches the overdischarge relea -se voltage (VDU) or higher. Remark If the battery is charged to a voltage higher than t -he overcharge detection voltage (VCU) and the battery voltage does not drops below the overcharge de -tection voltage (VCU) even when a heavy load, whic h causes an overcurrent, is connected, the overcurr -ent 1 and overcurrent 2 do not work until the batter -y voltage drops below the overcharge detection vol -tage (VCU). Since an actual battery has, however, a -n internal impedance of several dozens of mΩ, and the battery voltage drops immediately after a heavy load which causes an overcurrent is connected, the overcurrent 1 and overcurrent 2 work. Detection of load short-circuiting works regardless of the battery voltage. Overcurrent Condition When the discharging current becomes equal to or higher than a specified value (th -e VM pin voltage is equal to or higher than the overcurrent detection voltage) during di -scharging under normal condition and the state continues for the overcurrent detectio -n delay time or longer, the XB6206M turns off the discharging control FET to stop disc -harging. This condition is called overcurrent condition. (The overcurrent includes ove -rcurrent, or load short-circuiting.) The VM and GND pins are shorted intern -ally by the RVMS resistor under the overcurr -ent condition. When a load is connected, t -he VM pin voltage equals the VDD voltage due to the load. The overcurrent condition returns to the normal condition when the load is released and the impedance between the B+ and Bpins becomes higher than the automatic re -coverable impedance. When the load is re -moved, the VM pin goes back to the GND potential since the VM pin is shorted the G ND pin with the RVMS resistor. Detecting that the VM pin potential is lower than the overc -urrent detection voltage (VIOV), the IC returns to the normal condition. Overdischarge Condition When the battery voltage drops below th -e overdischarge detection voltage (VDL) du -ring discharging under normal condition and it continues for the overdischarge detect -ion delay time (tDL) or longer, the XB6206 M turns the discharging control FET off and stops discharging. This condition is called overdischarge condition. After the dischargi -ng control FET is turned off, the VM pin is pulled up by the RVMD resistor between VM and VDD in XB6206M. Meanwhile when VM is bigger than 1.5V (typ.) (the load shortcircuiting detection voltage), the current of the chip is reduced to the power-down curr -ent (IPDN). This condition is called power-do -wn condition. The VM and VDD pins are s -horted by the RVMD resistor in the IC under -6Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.2 XB6206M Abnormal Charge Current Detection -elay time for overdischarge current 2 or loa -d short-circuiting, the XB6206M stops disc -harging. When battery voltage falls below overdischarge detection voltage due to ove -rdischarge current, the XB6206M stops discharging by overdischarge current detection. In this case the recovery of battery volta -ge is so slow that if battery voltage after o -verdischarge voltage detection delay time is still lower than overdischarge detection voltage, the XB6206M shifts to power-down. If the VM pin voltage drops below the charger detection voltage (VCHA) during chargi -ng under the normal condition and it continues for the overcharge detection delay tim -e (tCU) or longer, the XB6206M turns the ch -arging control FET off and stops charging. This action is called abnormal charge curre -nt detection. Abnormal charge current detection works when the discharging control FET is on a -nd the VM pin voltage drops below the charger detection voltage (VCHA). When an abnormal charge current flows into a battery i -n the overdischarge condition, the XB6206 M consequently turns the charging control FET off and stops charging after the battery voltage becomes the overdischarge detection voltage and the overcharge detection delay time (tCU) elapses. Abnormal charge current detection is released when the voltage difference between VM pin and GND pin becomes lower than the charger detection voltage (VCHA) by se -parating the charger. Since the 0 V battery charging function has higher priority than th -e abnormal charge current detection functi -on, abnormal charge current may not be d -etected by the product with the 0 V battery charging function while the battery voltage i -s low. 0V Battery Charging Function (1) (2) (3) This function enables the charging of a connected battery whose voltage is 0V by self-discharge. When a charger having 0V battery start charging charger voltage (V0CHA) or higher is connected between B+ and B- pins, the charging control FET gate is fixed to VDD potential. When the voltage between the gate and the source of the charging control FET becomes equal to or higher than the turn-on voltage by the charger voltage, the charging control FET is turned on to start charging. At this time, the discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging control FET. If the battery voltage becomes equal to or higher than the overdischarge release voltage (VDU), the normal condition returns. Note: Load Short-circuiting condition (1) Some battery providers do not recommend charging of completely discharged batteries. Please refer to battery providers before the selection of 0 V battery charging function. (2) The 0V battery charging function has higher priority than the abnormal charge current detection function. Consequently, a product with the 0 V battery charging function charges a battery and abnormal charge current cannot be detected during the battery voltage is low (at most 1.8 V or lower). (3) When a battery is connected to the IC for the first time, the IC may not enter the normal condit -ion in which discharging is possible. In this case, set the VM pin voltage equal to the GND voltage (short the VM and GND pins or connect a charger) to enter the normal condition. If voltage of VM pin is equal or below sho -rt circuiting protection voltage (VSHORT), the XB6206M will stop discharging and battery is disconnected from load. The maximum delay time to switch current off is tSHORT. This status is released when voltage of VM pin i -s higher than short protection voltage (VSH ORT), such as when disconnecting the load. Delay Circuits The detection delay time for overdischarg -e current 2 and load short-circuiting starts when overdischarge current 1 is detected. As soon as overdischarge current 2 or load short-circuiting is detected over detection d -7Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.2 XB6206M TYPICAL APPLICATION As shown in Figure 5, the current path and must be kept as short & heavy as possibl -e. C1 is a filter decoupling circuit and should be as close as possible to VCC pin of XB62 06M. CHARGER+ R1 470Ω VDD BAT+ C1 0.1uF BAT- 1 10 VM GND 2 9 VM GND 3 8 VM GND 4 7 VM 6 VM GND 5 EPAD CHARGER- Figure 5 XB6206M in a Typical Battery Protection Circuit Symbol Typ Value range Unit C1 0.1 0.1~2.2 μF R1 0.47 0.47~2 KΩ Remark: 1.The above parameters may be changed without notice; 2.The schematic diagram and parameters of the IC are not used as the basis to ensure the operation of the circuit. Please conduct full measurement on the actual application circuit before setting the parameters. 3.If the resistance value is large , the overcharging voltage will be correspondingly larger by several mV. Precautions • Pay attention to the operating conditions for input/output voltage and load current so that the power loss in XB6206M does not exceed the power dissipation of the package. • Do not apply an electrostatic discharge to this XB6206M that exceeds the performance ratings of the built -in electrostatic protection circuit. -8Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.2 XB6206M PACKAGE OUTLINE(DFN3x3-10) D D1 k E L e b A A3 A1 Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.700/0.800 0.800/0.900 0.028/0.031 0.031/0.035 A1 0.000 0.050 0.000 0.002 0.203REF A3 0.008REF D 2.924 3.076 0.115 0.121 E 2.924 3.076 0.115 0.121 D1 2.300 2.500 0.091 0.098 E1 1.600 1.800 0.063 0.071 k b 0.300 0.200 0.008 0.500TYP e L 0.008MIN 0.200MIN 0.324 0.020TYP 0.476 -9Suzhou XySemi Electronic Technology Co., Limited. 0.012 0.013 0.019 www.xysemi.com.cn Rev0.2 XB6206M DISCLAIMER The information described herein is subject to change without notice. Suzhou XySemi Electronic Technology Co., Limited is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar Arrangement or other arrangements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without express permission of Suzhou XySemi Electronic Technology Co., Limited is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment ,medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Suzhou XySemi Electronic Technology Co., Limited. Although Suzhou XySemi Electronic Technology Co., Limited. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor may occur. The use of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measure and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. - 10 Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.2