BCP52-16-MS

www.msksemi.com BCP51-MS BCP52-MS BCP53-MS Semiconductor Compiance BCP51-MS.52-MS,53-MS TRANSISTOR (PNP) SOT-223 FEATURES 2. COLLECTOR For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN) z 1 1. BASE z 2 z 3 3. EMITTER z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage -45 -60 -100 V VCEO Collector-Emitter Voltage -45 -60 -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 1.5 W RθJA Thermal Resistance Junction to Ambient 94 ℃/W Tstg Storage Temperature Range BCP51-MS BCP52-MS BCP53-MS Unit ℃ -65~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage BCP51 BCP52 Collector-emitter breakdown voltage Test conditions V(BR)CBO IC=- 0.1mA,IE=0 -60 -100 BCP51 -45 V(BR)CEO IC= -10mA,IB=0 BCP53 Collector cut-off current Max Unit -45 BCP53 BCP52 Base-emitter breakdown voltage Min V -60 V -80 V(BR)EBO IE = -10μA,IC=0 -5 V ICBO VCB= -30 V, IE=0 hFE(1) VCE=-2V, IC=-5mA 25 hFE(2) VCE= -2V, IC=-150m A 63 hFE(3) VCE= -2V, IC=-500m A 25 VCE(sat) IC=-500mA,IB=-50mA -0.5 V Base-emitter voltage VBE VCE=-2V, IC=-500m A -1 V Transition frequency fT DC current gain Collector-emitter saturation voltage VCE=-10V,IC=-50mA,f=100MHz -100 100 nA 250 MHz CLASSIFICATION OF hFE(2) TypE BCP51-10,BCP52-10,BCP53-10 BCP51-16,BCP52-16,BCP53-16 Range 63-160 100-250 www.msksemi.com BCP51-MS BCP52-MS BCP53-MS Semiconductor hTypical Characteristics ha Typical Characteristics Static Characteristic —— IC COMMON EMITTER VCE= -2V Ta=100℃ -1mA hFE (mA) COMMON EMITTER Ta=25℃ -200 DC CURRENT GAIN IC -0.9mA -0.8mA -150 COLLECTOR CURRENT hFE 1000 -250 Compiance -0.7mA -0.6mA -100 -0.5mA -0.4mA Ta=25℃ 100 -0.3mA -50 -0.2mA IB=-0.1mA -0 10 -0 -1 -2 -3 -4 COLLECTOR-EMITTER VOLTAGE VBEsat —— -1000 -5 -1 IC VCEsat -1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -100 IC —— -1000 (mA) IC β=10 β=10 Ta=25℃ -600 Ta=100 ℃ -400 -200 -0 -0.1 -1 -10 -100 COLLECTOR CURREMT IC -1000 —— IC Ta=100 ℃ -100 Ta=25℃ -10 -0.1 -1000 -1 -10 COLLECTOR CURREMT (mA) VBE fT 300 -1000 (mA) IC Ta=25℃ T =2 5℃ a -10 TRANSITION FREQUENCY 100 T =1 00℃ a COLLECTOR CURRENT IC fT -100 —— -100 IC COMMON EMITTER VCE=-10V (MHz) COMMON EMITTER VCE=-2V (mA) -10 COLLECTOR CURRENT VCE (V) -1 -0.1 -0 -200 -400 -600 -800 -1000 10 -3 -1200 -10 -20 1000 Cob/Cib —— VCB/VEB —— IC -50 -60 125 150 (mA) Ta COLLECTOR POWER DISSIPATION PC (mW) 1200 100 C (pF) -40 1500 Ta=25 ℃ Cib CAPACITANCE PC 1800 f=1MHz IE=0/IC=0 Cob 10 1 -0.1 -30 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) 900 600 300 0 -1 REVERSE VOLTAGE -10 V (V) -30 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) www.msksemi.com BCP51-MS BCP52-MS BCP53-MS Semiconductor PACKAGE MECHANICAL DATA Symbol A A1 A2 b b1 c D E E1 e L θ Dimensions In Millimeters Min. Max. —— 1.800 0.020 0.100 1.500 1.700 0.660 0.840 2.900 3.100 0.230 0.350 6.300 6.700 6.700 7.300 3.300 3.700 2.300(BSC) 0.750 —— 0° 10° Dimensions In Inches Min. Max. —— 0.071 0.001 0.004 0.059 0.067 0.026 0.033 0.114 0.122 0.009 0.014 0.248 0.264 0.264 0.287 0.130 0.146 0.091(BSC) 0.030 —— 0° 10° REEL SPECIFICATION P/N BCP51-MS BCP52-MS BCP53-MS PKG QTY SOT-223 1000 Compiance BCP51-MS BCP52-MS BCP53-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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