AP30P10D

AP30P10D -100V P-Channel Enhancement Mode MOSFET Description The AP30P10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -100V ID =-30 A RDS(ON) < 95mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP30P10D TO-252-3L AP30P10D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -30 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -15 A IDM Pulsed Drain Current2 -75 A EAS Single Pulse Avalanche Energy3 157.2 mJ IAS Avalanche Current 18.9 A PD@TC=25℃ Total Power Dissipation4 54 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W RθJC Thermal Resistance Junction-Case1 2.3 ℃/W AP30P 10D Rve1.0 臺灣永源微電子科技有限公司 1 Symbol AP30P10D -100V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol BVDSS RDS(ON) VGS(th) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -100 --- --- V VGS=-10V , ID=-10A --- 78 95 VGS=-4.5V , ID=-8A --- 86 110 -1.2 -1.7 -2.5 mΩ V VGS=VDS , ID =-250uA IDSS Drain-Source Leakage Current VDS=-100V , VGS=0V , TJ=25℃ --- --- -50 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-10A --- 24 --- S Qg Total Gate Charge --- 44.5 --- Qgs Gate-Source Charge --- 9.13 --- Qgd Gate-Drain Charge --- 5.93 --- Td(on) Turn-On Delay Time --- 12 --- --- 27.4 --- --- 79 --- --- 53.6 --- --- 3029 --- --- 129 --- --- 76 --- Tr Td(off) Tf Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-50V , VGS=-10V , ID=-20A VDD=-50V RG=3.3 , , VGS=-10V ID=-10A VDS=-20V , VGS=0V , f=1MHz , nC ns pF Continuous Source Current1,5 VG=VD=0V , Force Current --- --- -18 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-8A , di/dt=-100A/µs , --- 38.7 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 22.4 --- nC IS Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.88mH,IAS=-18.9A 4.The power dissipation is limited by 150℃ junction temperature 5 .The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 AP30P 10D Rve1.0 臺灣永源微電子科技有限公司 AP30P10D -100V P-Channel Enhancement Mode MOSFET Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage 12 -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Typical S-D Diode Forward Voltage Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance Normalized -VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) AP30P 10D Rve1.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs TJ 臺灣永源微電子科技有限公司 3 Fig.5 Normalized VGS(th) vs TJ 150 AP30P10D -100V P-Channel Enhancement Mode MOSFET Fig.7 Capacitance Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform 4 AP30P 10D Rve1.0 臺灣永源微電子科技有限公司 AP30P10D -100V P-Channel Enhancement Mode MOSFET Package Mechanical Data E Dimensions A B2 Ref. C2 H D L V1 C B DETAIL A V1 V2 A2 V1 E1 Typ. Min. Typ. Max. A 2.10 2.50 0.083 0.098 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 E 6.40 E1 4.63 0.248 0.209REF 5.30REF 6.80 0.252 0.268 0.182 G 4.47 4.67 0.176 0.184 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.065 7° 7° V1 L2 Inches Max. A2 D1 G D1 Millimeters Min. 0° V2 6° 0° 6° DETAIL A TO-252 Reel Spectification-TO-252 B D 0 P0 P2 Dimensions T E Ref. A B0 A D1 W F t1 K0 P1 A0 B B B 5° Φ3 29 A A 20 Φ13 Millimeters Inches Typ. Max. 0.626 0.630 0.634 0.065 0.069 0.073 0.291 0.295 0.299 1.60 0.055 0.059 0.063 1.60 0.055 0.059 0.063 4.00 4.10 0.154 0.157 0.161 8.00 8.10 0.311 0.315 0.319 2.00 2.10 0.075 0.079 0.083 6.90 7.00 0.270 0.271 0.276 10.60 0.411 0.413 0.417 2.88 0.105 0.109 0.113 Min. Typ. Max. W 15.90 16.00 16.10 E 1.65 1.75 1.85 F 7.40 7.50 7.60 D0 1.40 1.50 D1 1.40 1.50 P0 3.90 P1 7.90 P2 1.90 A0 6.85 B0 10.45 10.50 K0 2.68 2.78 T 0.24 t1 0.10 10P0 39.80 0.27 Min. 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 5 AP30P 10D Rve1.0 臺灣永源微電子科技有限公司 AP30P10D -100V P-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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