AP6N40D

AP6N40D 400V N-Channel Enhancement Mode MOSFET Description The AP6N40D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 400V ID =6A RDS(ON) < 1.0Ω @ VGS=10V （Type：0.8Ω） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP6N40D TO-252-3L AP6N40D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage (VGS = 0V) 400 V ID Continuous Drain Current 6 A 28 A IDM Pulsed Drain Current (note1) VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy (note2) 176 mJ IAR Avalanche Current (note1) 7 A EAR Repetitive Avalanche Energy note1) 18 mJ PD Power Dissipation (TC = 25ºC) 32.9 W -55~+150 ºC TJ, Tstg Operating Junction and Storage Temperature Range RthJC Thermal Resistance, Junction-to-Case 3.8 ºC/W RthJA Thermal Resistance, Junction-to-Ambient 13.3 ºC/W 1 AP6N40D RVE1.0 永源微電子科技有限公司 AP6N40D 400V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 400 440 -- V IDSS Zero Gate Voltage Drain Current VDS= 650V, VGS= 0V, TJ=25ºC -- -- 1 μA IGSS Gate-Source Leakage VGS = ±30V -- -- ±100 nA VGS(th) Gate-Source Threshold Voltage VDS = VGS, ID = 250µA 2.0 3.5 4.0 V RDS(on) Drain-Source On-Resistance (Note3) VGS = 10V, ID = 3.5A -- 0.8 1.0 Ω Ciss Input Capacitance -- 700 -- Coss Output Capacitance -- 94 -- Crss Reverse Transfer Capacitance -- 12 -- Qg Total Gate Charge -- 19 -- Qgs Gate-Source Charge -- 3.7 -- Qgd Gate-Drain Charge -- 11 -- td(on) Turn-on Delay Time -- 13 -- tr Turn-on Rise Time -- 20 -- VGS = 0V, VDS = 25V, f = 1.0MHz VDD=520V, ID = 7A, VGS = 10V VDD=325V, ID = 7A, RG = 25Ω pF nC ns td(off) Turn-off Delay Time -- 76 -- tf Turn-off Fall Time -- 40 -- IS Continuous Body Diode Current -- -- 7.0 A ISM Pulsed Diode Forward Current -- -- 28 A VSD Body Diode Voltage -- -- 1.4 V trr Reverse Recovery Time -- 260 -- ns Qrr Reverse Recovery Charge -- 3.8 -- μC TC = 25 ºC TJ = 25ºC, ISD = 7A, VGS = 0V VGS = 0V,IS = 7A, diF/dt =100A /μs Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The EAS data shows Max. rating . IAS = 4.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 AP6N40D RVE1.0 永源微電子科技有限公司 AP6N40D 400V N-Channel Enhancement Mode MOSFET Typical Characteristics Figure 1. Output Characteristics (T J = 25ºC) Figure 3. Drain Current vs. Temperature AP6N40D RVE1.0 Figure 4. BV DSS Variation vs. Temperature Figure 6. On-Resistance vs. Temperature 永源微電子科技有限公司 3 Figure 5. Transfer Characteristics Figure 2. Body Diode Forward Voltage AP6N40D 400V N-Channel Enhancement Mode MOSFET Figure 7. Capacitance Figure 8. Gate Charge Figure 9. Transient Thermal Impedance 4 AP6N40D RVE1.0 永源微電子科技有限公司 AP6N40D 400V N-Channel Enhancement Mode MOSFET Package Mechanical Data：TO-252-3L E Dimensions A B2 C2 Ref. L V1 Min. 0.083 0.098 A2 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 6.80 0.252 D H DETAIL A V1 A2 V1 0.209REF 6.40 E1 4.63 G 4.47 4.67 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 V2 0.268 0.182 0.176 7° V1 L2 Max. E V2 D1 5.30REF D1 G Typ. Max. 2.50 Min. C E1 Typ. Inches 2.10 A B Millimeters 0.184 0.065 7° 0° 6° 0° 6° DETAIL A TO-252 Reel Spectification-TO-252 B D 0 P0 P2 Dimensions T E Ref. A B0 A D1 W F t1 K0 P1 A0 B B B 5° Φ3 29 A A 20 Φ13 Millimeters Inches Min. Typ. Max. Min. Typ. Max. W 15.90 16.00 16.10 0.626 0.630 0.634 E 1.65 1.75 1.85 0.065 0.069 0.073 F 7.40 7.50 7.60 0.291 0.295 0.299 D0 1.40 1.50 1.60 0.055 0.059 0.063 0.063 D1 1.40 1.50 1.60 0.055 0.059 P0 3.90 4.00 4.10 0.154 0.157 0.161 P1 7.90 8.00 8.10 0.311 0.315 0.319 P2 1.90 2.00 2.10 0.075 0.079 0.083 A0 6.85 6.90 7.00 0.270 0.271 0.276 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 2.88 0.105 0.109 0.113 T 0.24 t1 0.10 10P0 39.80 0.27 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 5 AP6N40D RVE1.0 永源微電子科技有限公司 AP6N40D 400V N-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. 6 AP6N40D RVE1.0 永源微電子科技有限公司 AP6N40D 400V N-Channel Enhancement Mode MOSFET Edition Date Change Rve1.0 2021/1/31 Initial release Copyright Attribution“APM-Microelectronice” 7 AP6N40D RVE1.0 永源微電子科技有限公司