BCP56-MS

www.msksemi.com BCP54-MS BCP55-MS BCP56-MS Semiconductor BCP54-MS,55-MS,56-MS TRANSISTOR (NPN) SOT-223 1. BASE Compiance FEATURES z For AF driver and output stages z High collector current z Low collector-emitter saturation voltage z Complementary types: BCP51 ... BCP53 (PNP) 1 2. COLLECTOR 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter BCP54-MS BCP55-MS BCP56-MS Unit VCBO Collector-Base Voltage 45 60 100 V VCEO Collector-Emitter Voltage 45 60 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 1.5 W RθJA Thermal Resistance Junction to Ambient 83.3 ℃/W Tstg Storage Temperature Range ℃ -65~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage Min V(BR)CBO IC= 0.1mA,IE=0 60 BCP56-MS 100 BCP54-MS 45 BCP55-MS V(BR)CEO IC= 10mA,IB=0 Unit V V 60 BCP56-MS 80 V(BR)EBO Base-emitter breakdown voltage Max 45 BCP54-MS BCP55-MS Collector-emitter breakdown voltage Test conditions IE = 10μA,IC=0 5 V ICBO VCB= 30 V, IE=0 hFE(1) VCE= 2V, IC=5mA 25 hFE(2) VCE= 2V, IC=150m A 63 hFE(3) VCE= 2V, IC=500m A 25 VCE(sat) IC=500mA,IB=50mA 0.5 V Base-emitter voltage VBE VCE=2V, IC=500m A 1 V Transition frequency fT Collector cut-off current DC current gain Collector-emitter saturation voltage VCE=10V,IC=50mA,f=100MHz 100 nA 250 100 MHz CLASSIFICATION OF hFE(2) Rank Range BCP54-10, BCP55-10, BCP56-10 BCP54-16, BCP55-16, BCP56-16 63-160 100-250 www.msksemi.com BCP54-MS BCP55-MS BCP56-MS Semiconductor Compiance Typical Characteristics Static Characteristic (mA) 250 hFE 0.8mA DC CURRENT GAIN COLLECTOR CURRENT IC 0.9mA 150 —— IC COMMON EMITTER VCE=2V COMMON EMITTER Ta=25℃ 1.0mA 200 hFE 1000 0.7mA 0.6mA 100 0.5mA 0.4mA 0.3mA 50 Ta=100℃ 300 Ta=25℃ 100 30 0.2mA IB=0.1mA 0 10 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 —— VCE 5 1 IC VBEsat 1.0 BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) 300 100 Ta=100℃ Ta=25℃ 30 —— 1000 (mA) IC 0.8 Ta=25℃ Ta=100℃ 0.6 0.4 1 10 100 COLLECTOR CURRENT IC 1000 —— IC 1000 1 (mA) 10 (mA) 100 COLLECTOR CURRENT VBE Cob/ Cib 300 COMMON EMITTER VCE=2V —— IC 1000 (mA) VCB/ VEB f=1MHz IE=0/IC=0 Cib 100 Ta=25℃ (pF) Ta=100℃ C 100 Ta=25℃ 10 1 0.2 0.4 0.6 0.8 BASE-EMITTER VOLTAGE fT —— VBE 10 1 0.3 (V) PC 1800 COLLECTOR POWER DISSIPATION PC (mW) 100 COMMON EMITTER VCE=10V 10 3 REVERSE BIAS VOLTAGE IC TRANSITION FREQUENCY Cob 1 0.1 1.0 (MHz) 300 CAPACITANCE IC IC β=10 10 COLLECTOR CURRENT 100 COLLECTOR CURRENT β=10 fT 10 (V) —— V 20 (V) Ta 1500 1200 900 600 300 Ta=25℃ 10 10 100 30 COLLECTOR CURRENT IC (mA) 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) www.msksemi.com BCP54-MS BCP55-MS BCP56-MS Semiconductor PACKAGE MECHANICAL DATA Symbol A A1 A2 b b1 c D E E1 e L θ Dimensions In Millimeters Min. Max. —— 1.800 0.020 0.100 1.500 1.700 0.660 0.840 2.900 3.100 0.230 0.350 6.300 6.700 6.700 7.300 3.300 3.700 2.300(BSC) 0.750 —— 0° 10° Dimensions In Inches Min. Max. —— 0.071 0.001 0.004 0.059 0.067 0.026 0.033 0.114 0.122 0.009 0.014 0.248 0.264 0.264 0.287 0.130 0.146 0.091(BSC) 0.030 —— 0° 10° REEL SPECIFICATION P/N BCP54-MS BCP55-MS BCP56-MS PKG QTY SOT-223 1000 Compiance BCP54-MS BCP55-MS BCP56-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. www.msksemi.com