HXY70P03D

HUAXUANYANG HXY70P03D HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET Description The HXY70P03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and D operation with gate voltages as low as 4.5V. This S device is suitable for use as a G Battery protection or in other Switching application. TO252-2L General Features D VDS = -30V ID =-70 A RDS(ON) < 10mΩ @ VGS=-10V G Application S Battery protection P-Channel MOSFET Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID HXY70P03D Pack Marking Qty(PCS) TO252-2L 70P03 XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1,6 -70 A ID@TC=100℃ -10V1,6 -50 A -200 A 80 mJ -40 A 90 W -55 to 175 ℃ -55 to 175 ℃ 20 ℃/W 50 ℃/W 1.6 ℃/W IDM EAS IAS PD@TC=25℃ Continuous Drain Current, VGS @ Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA RθJC Thermal Resistance Junction-ambient Thermal Resistance Junction-ambient 1(t≦10S) 1(Steady Thermal Resistance Junction-case Shenzhen HuaXuanYang Electronics CO.,LTD 1 State) www.hxymos.com HUAXUANYANG HXY70P03D HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V VGS=-10V , ID=-20A --- 7 10 mΩ VGS=-4.5V , ID=-15A --- 11 18 mΩ VGS=VDS , ID =-250uA -1.2 --- -2.5 V VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.2 --- Ω Qg Total Gate Charge (-10V) --- 60 --- Qgs Gate-Source Charge --- 9 --- Qgd Gate-Drain Charge --- 15 --- Td(on) Turn-On Delay Time --- 17 --- --- 40 --- --- 55 --- --- 13 --- --- 3450 --- --- 255 --- --- 140 --- Tr Td(off) Tf Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-15V , VGS=-10V ID=-18A VDD=-15V VGS=-10V RG=3.3Ω, ID=-20A VDS=-25V , VGS=0V , f=1MHz uA nC ns pF Continuous Source Current1,5 VG=VD=0V , Force Current --- --- -70 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-20A , di/dt=100A/µs , --- 22 --- nS --- 72 --- nC IS Qrr Reverse Recovery Charge TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=-50V,VGS=-10V,L=0.1mH,IAS=-40A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation 6.The maximum current rating is package limited. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HUAXUANYANG HXY ELECTRONICS CO.,LTD HXY70P03D P-Channel Enhancement Mode MOSFET Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized -VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HUAXUANYANG HXY70P03D HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM SINGLE T ON T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Shenzhen HuaXuanYang Electronics CO.,LTD Fig.11 Unclamped Inductive Switching Waveform www.hxymos.com HUAXUANYANG HXY70P03D HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET TO252-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 L2 2.900 TYP. 1.400 L3 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. Shenzhen HuaXuanYang Electronics CO.,LTD 0.211 TYP. www.hxymos.com HUAXUANYANG HXY70P03D HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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