FR104W F4

www.msksemi.com FR101W THRU FR107W Semiconductor Compiance FEATURES 2 * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Fast switching speed 1 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Metallurgically bonded construction * Polarity: Color band denotes cathode end * Mounting position: Any SOD-123FL Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. FR10W F1 FR10W F2 MARK F1 F2 F3 F4 F5 F6 F7 Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at Ta = 65 °C IF(AV) 1.0 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) IFSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF 1.3 V Maximum DC Reverse Current at Rated DC Blocking Voltage IR 1 50 μA P/N Parameter Ta = 25 °C Ta =125 °C FR103W FR10W F3 F4 FR105W FR10W F5 F6 FR10W F7 Units ns Maximum Reverse Recovery Time 1） trr Typical Junction Capacitance 2） Cj 15 pF Tj, Tstg -55 ~ +150 °C Operating and Storage Temperature Range 1） 2） 150 250 500 Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A Measured at 1MHz and applied reverse voltage of 4V D.C www.msksemi.com FR101W THRU FR107W Semiconductor FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARDCURRENT,(A) CHARACTERISTICS 50 10 3.0 1.0 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.2 0 0 20 40 Tj=25 C Pulse Width 300us 1% Duty Cycle 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE ( C) 0.1 .01 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50 NONINDUCTIVE 10 NONINDUCTIVE () (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) () 1 NONINDUCTIVE OSCILLISCOPE (NOTE 1) PEAK FORWAARD SURGECURRENT,(A) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 Sine Wave JEDEC method 10 0 1 | | | | | | | | 0 -0.25A 1cm SET TIME BASE FOR 50 / 10ns / cm 50 100 35 30 25 20 15 10 5 0 -1.0A 10 FIG.5-TYPICAL JUNCTION CAPACITANCE 2. Rise Time= 10ns max., Source Impedance= 50 ohms. +0.5A 5 NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. trr 8.3ms Single Half Tj=25 C 20 (+) JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) Compiance .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) www.msksemi.com FR101W THRU FR107W Semiconductor Compiance 1.8± 0.3 0.95 ±0.25 PACKAGE MECHANICAL DATA 1.15±0.25 0.05-0.30 2.75 ±0.25 0.6±0.3 3.7 ±0.30 Dimensions in millimeters 1.4 2.85 1.2 REEL SPECIFICATION P/N FR101W THRU FR107W PKG SOD-123FL QTY 3000 www.msksemi.com FR101W THRU FR107W Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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