HD100N03(BAF)

HP100N03/HD100N03 Features VDSS RDS(on) Vgs=10V typ. Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current 30V 3.1mΩ 4.1mΩ 4.3mΩ 7mΩ 100A 80A RDS(on) Vgs=4.5V typ. max. ID @ Vgs=10V (Silicon limited) ID @ Vgs=10V (Package limited) Application Load Switch SPMS TO-220 TO252 G D S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDSS VGSS Param Drain-to-Source Voltage eter Gate-to-Source Voltage ID Vgs=10V Continuous Drain Current ID Vgs=4.5V IDP IAS EAS PD TJ, TSTG Maximum Pulsed Drain Current Avalanche Current (L=0.1mH) T =25°C Energy (L=0.1mH) Avalanche T =25°C Maximum Power Dissipation TC=25°C (Silicon limited) TC=100°C (Silicon limited) TC=25°C (Package limited) TC=25°C (Silicon limited) TC=100°C (Silicon limited) TC=25°C (Package limited) TC=25°C TC=25°C TC=100°C Junction & Storage Temperature Range 30 ±20 100 Unit V V 80 70 100 65 70 23 26 71 35 -55~175 A A A mJ W °C Thermal Characteristics Symbol Parameter Max. Unit RthJC Thermal resistance, junction to case 2.1 ℃/W RthJA Thermal resistance, junction to ambient 106 ℃/W 1 April 26, 2016 HP100N03/HD100N03 Electrical Characteristics (TA=25°C unless otherwise noted) Parameter Symbol Static Characteristics BVDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current RDS(on) Drain-Source On-Resistance Gfs Forward Transconductance IDSS Test Conditions Min. Typ Max. Unit VGS=0V,ID=250uA 30 — — V VDS=30V,VGS=0V — — 1 uA VDS=VGS,ID=250uA VGS=±20V, VDS=0V 0.8 — 1.8 — — ±100 V nA VGS=10V, ID=20A VGS=4.5V, ID=20A VDS=5V, ID=100A — — — 3.1 4.3 72 4.1 7 — mΩ ISD=25A,VGS=0V — 0.8 1.3 V — — 50 A — 14 — nS — 2.8 — nC — 1.9 — Ω — 2999 — — 335 — — 290 — — 21 — — 32 — — 59 — — 34 — — 26 — — 3.5 — — 14 — S Diode Characteristics VSD IS Diode Forward Voltage trr Diode Continuous Forward Current Reverse Recovery Time Qrr Reverse Recovery Charge IS=20A, di/dt=100A/us Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Turn-On Delay Time td(on) tr td(off) tf Rise Time Turn-Off Delay Time Fall Time VGS=0V, VDS=0V, Frequency=1MHz VGS=0V, VDS=15V, F=1MHz VDS=15V, ID=1A, Rg=3 Ω, VGS=4.5V pF nS Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge VDS=25V， VGS=4.5V， ID=14A 2 nC April 26, 2016 HP100N03/HD100N03 Typical Operating Characteristics Figure 1. Typ. Output Characteristics Figure 2. Typ. Output Characteristics 180 120 Tj=25℃ Tj=125℃ 160 5V 100 140 4.5V 80 3V From Bottom to Top 7,9,10V 100 ID (A ) ID (A ) 120 80 60 From Bottom to Top 3.5,4.5,5,7,9,10V 3.5V 60 40 3V 40 20 20 0 0 0 2 4 6 8 10 12 14 16 18 20 0 1 2 VDS(V) 3 4 5 6 VDS(V) Figure 3. Transfer Characteristics Figure 4. Gate Threshold Voltage Characteristics 4.0 1E+3 VDS=5V ID=250uA 3.5 N ormallized V GSth(V ) 1E+2 Tj = 125℃ ID (A ) 1E+1 1E+0 1E-1 Tj = 25℃ 3.0 2.5 2.0 1E-2 1.5 1E-3 0.0 1.0 -50 -25 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 3.0 VGS(V) Tj （℃ ） 3 April 26, 2016 HP100N03/HD100N03 SKTD055N03L Typical Operating Characteristics Figure 5. Rdson vs. Drain Current Characteristics Figure 6. Rdson vs. Junction Tem Characteristics 1E-2 2.2 VGS=4.5V,Tj=25℃ VGS=4.5V,ID=20A 2.0 8E-3 N orm allized R D SON R D SON (Ω ) 1.8 6E-3 4E-3 1.6 1.4 1.2 1.0 0.8 2E-3 0.6 0E+0 0.4 0 20 40 60 80 -50 -25 100 0 25 50 75 100 125 150 Tj （℃） ID(A) Figure 7. Rdson vs. VGS Characteristics Figure 8. IS vs. VSD Characteristics 1E+2 1E+0 ID=20A Tj=25℃ Tj=125℃ 1E+1 IS (A ) R D SO N (Ω ) 1E-1 1E+0 Tj=25℃ 1E-2 1E-1 1E-2 0.0 1E-3 0 2 4 6 8 10 12 * Note: 1. VGS=0V 2. 250uS Pusle test 0.2 0.4 0.6 0.8 1.0 VS (V) VGS(V) 4 April 26, 2016 1.2 HP100N03/HD100N03 Typical Operating Characteristics Figure 9. Gate Charge Characteristics Figure 10. Capacitance Characteristics 5 1E+4 4.5 4 Ciss 3.5 VDS=25V,ID=14A C (pF ) V GS(V ) 3 2.5 1E+3 Coss 2 1.5 Crss 1 0.5 1E+2 0 0 0 5 10 15 20 25 5 10 30 15 20 25 VDS(V) Qg (nC) Figure 11. Thermal Resistance Characteristics 5 April 26, 2016 30 HP100N03/HD100N03 Test Circuit & Waveform 6 April 26, 2016 HP100N03/HD100N03 Package Information {vTY\Y G 7 April 26, 2016 HP100N03/HD100N03 Package Information TO-220 (B) ±0.20 84 4.57±0.20 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 . φ3 0 .2 ±0 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20