安徽富信半导体科技有限公司
ANHUI
FOSAN
SEMICONDUCTOR
TECHNOLOGY
CO. ,
LTD.
THRU
DSK12W
DSK110W
1.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE
20 to 100 Volts
CURRENT
1.0 Ampere
FEATURES
SOD12 3 FL
* Ideal for surface mount applications
* Easy pick and place
. 114(2 .9)
. 102(2 .6)
* Built- in strain relief
* Low forward voltage drop
.043( 1 . 1)
.031(0 .8)
. 148(3 .75)
. 140(3 .55)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Metallurgically bonded construction
* Polarity: Color band denotes cathode end
* Mounting position: Any
.008(0 .20)
. 005(0 . 12)
.043( 1 . 10)
.036(0.90)
.075( 1 .9)
.067( 1 .7)
.033(0 .85)
.022(0 .55)
Dimensions in inches and ( millimeters)
MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
DSK12W DSK13W DSK14W DSK15W DSK16W DSK18W DSK19W DSK110W
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
20
14
20
30
21
30
40
28
40
50
35
50
See Fig. 1
superimposed on rated load ( JEDEC method)
Maximum DC Reverse Current
Ta=25 C
at Rated DC B locking Voltage
Ta=100 C
NOTES:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Ambient.
0.85
-65
+ 125
-65
UNITS
V
V
V
A
V
mA
p F
C/ W
-65
+150
100
70
100
mA
10
110
80
Typical Thermal Resistance R JA ( Note 2 )
Storage T emperature Range TSTG
90
63
90
A
30
0.70
0.2
0.55
Typical Junction Capacitance ( Note1 )
Operating Temperature Range TJ
80
56
80
1.0
Peak Forward S urge C urrent, 8 . 3 ms single half sine- wave
Maximum Instantaneous Forward Voltage at 1 . 0 A
60
42
60
+ 150
C
C
RATING AND CHARACTERISTIC CURVES (DS K12 W THRU DS K110 W)
FIG.2-TYPICAL FORWARD
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
CHARACTERISTICS
1.2
50
1.0
0.8
10
0.6
0.4
3.0
0.2
0
20
40
60
80
100
120
140
160
180
200
1.0
AMBIENT TEMPERATURE ( C)
Tj = 25 C
P u ls e
1%
W id th
3 0 0 u s
Duty Cyc le
0.1
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
.01
24
.1
.3
.5
.7
.9
1. 1
1.3
1.5
FORWARDVOLTAGE, ( V)
18
8 . 3 m s S i n gl e Ha lf
Tj=25 C
Sine Wave
12
JED EC m eth od
6
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
0
1
5
10
50
100
100
NUMBER OF CYCLES AT 6 0 Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
10
350
300
1.0
250
Tj= 7 5
C
Tj=25
C
200
150
.1
100
50
0
.01
.05
.1
.5
1
REVERSE VOLTAGE, ( V)
5
10
50
100
.01
0
20
40
60
80
100 120 140
PERCENTAGE RATED PEAK REVERSE VOLTAGE
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