AOD417-HXY

HXY AOD417-HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Description The AOD417-HXY uses advanced trench technology to provide excellent RDS(ON), low gate charge and D S operation with gate voltages as low as 4.5V. This G device is suitable for use as a TO-252 Battery protection or in other Switching application. General Features D VDS = -30V I D =-40A G RDS(ON) < 23 mΩ @ VGS=10V S Application P-Channel MOSFET Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AOD417-HXY TO252-2L 40P03 Qty(PCS) XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 -40 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 -25 A IDM Pulsed Drain Current2 -70 A PD@TC=25℃ Total Power Dissipation4 34.7 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 62 ℃/W RθJC Thermal Resistance Junction-Case1 3.6 ℃/W Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HUAXUANYANG AOD417-HXY HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) IDSS Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-15A --- 18 23 VGS=-4.5V , ID=-10A --- 37 44 -1.0 --- -2.5 V mV/℃ Parameter Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions VGS=VDS , ID =-250uA VGS(th) Temperature Coefficient Drain-Source Leakage Current --- 4.6 --- VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-10A --- 5 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 ---  Qg Total Gate Charge (-4.5V) --- 12.5 --- Qgs Gate-Source Charge --- 5.4 --- Qgd Gate-Drain Charge --- 5 --- Td(on) Turn-On Delay Time VDS=-15V , VGS=-4.5V , ID=-15A nC --- 4.4 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3, --- 11.2 --- Turn-Off Delay Time ID=-15A --- 34 --- Fall Time --- 18 --- Ciss Input Capacitance --- 1345 --- Coss Output Capacitance --- 194 --- Crss Reverse Transfer Capacitance --- 158 --- Min. Typ. Max. Unit --- --- -40 A --- --- -75 A --- --- -1.2 V IF=-15A , dI/dt=100A/µs , --- 12.4 --- nS TJ=25℃ --- 5 --- nC Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,5 Pulsed Source Current2,5 Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=-25V,VGS=-10V,L=0.1mH,IAS=-38A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY AOD417-HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Typical Characteristics 30 ID=-12A 27 21 VGS=-7V 44 RDSON (mΩ) VGS=-10V -ID Drain Current (A) 24 VGS=-5V 18 VGS=-4.5V 15 VGS=-3V 12 30 9 6 3 0 16 0 1 0.5 1.5 -VDS , Drain-to-Source Voltage (V) 2 4 Fig.1 Typical Output Characteristics 8 10 Voltage 10 ID=-15A -VGS Gate to Source Voltage (V) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 8 6 VDS=15V 4 VDS=24V 2 0 0.2 0.4 0.6 0.8 1 0 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 5 10 15 20 QG , Total Gate Charge (nC) 25 30 Fig.4 Gate-Charge Characteristics diode 2.0 Normalized On Resistance 1.5 Normalized VGS(th) -VGS (V) Fig.2 On-Resistance v.s Gate-Source 12 -IS Source Current(A) 6 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) Fig.5 Normalized VGS(th) v.s TJ Shenzhen HuaXuanYang Electronics CO.,LTD 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ www.hxymos.com HXY AOD417-HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG 10000 100.00 F=1.0MHz 100us 1ms Capacitance (pF) Ciss 10.00 10ms 1000 -ID (A) 100ms DC 1.00 Coss Crss 100 0.10 Tc=25o C Single Pulse 0.01 10 5 1 9 13 17 -VDS Drain to Source Voltage(V) 21 1 0.1 25 Fig.7 Capacitance 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM 0.01 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Shenzhen HuaXuanYang Electronics CO.,LTD Fig.11 Unclamped Inductive Switching Waveform www.hxymos.com HXY AOD417-HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG TO-252-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 0.483 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 L1 L2 2.900 TYP. 1.400 L3 0.409 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. Shenzhen HuaXuanYang Electronics CO.,LTD 0.211 TYP. www.hxymos.com HXY AOD417-HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the HUA XUAN YANG ELECTRONICS product that you intend to use. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com