SM4185T9RL

SM4185T9RL P-Ch 40V Fast Switching MOSFETs  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Product Summary BVDSS -40V Description RDSON 13.5mΩ ID -40A TO252 Pin Configuration The SM4185 is the high cell density trenchedPch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SM4185 meet the RoHS and Green Productrequirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings (TA = 25°C, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V TC=25°C -40 ID Continuous Drain Current TC=100°C A -22 IDM -140 A EAS 57.8 mJ PD 40.3 W TJ, TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 66 °C/W Thermal Resistance from Junction-to-Case RθJC 3.1 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter V01 1 www.sourcechips.com SM4185T9RL Electrical Characteristics (TJ = 25°C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage Gate-body Leakage current Zero Gate Voltage Drain Current TJ=25℃ TJ=100℃ V(BR)DSS VGS = 0V, ID = -250µA -40 - - V lGSS VDS = 0V, VGS = ±20V - - ±100 nA IDSS VDS = -40V, VGS = 0V - - -1 - - -100 -1.0 -1.5 -2.2 VGS = -10V, ID = -20A - 13.5 19 VGS = -4.5V, ID = -15A - 19.5 25 VDS = -10V, ID = -20A - 44 - - 2525 - - 190 - - 172 - - 10 - - 35 - - 5.5 - Gate-Threshold Voltage VGS(th) Drain-Source On-Resistance4 RDS(on) gfs Forward Transconductance4 VDS = VGS, ID = -250µA μA V mΩ S Dynamic Characteristics5 Ciss Input Capacitance Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg VDS = -20V, VGS =0V, f =1MHz f =1MHz pF Ω Switching Characteristics5 Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 8 - Turn-On Delay Time td(on) - 14.5 - - 20.2 - - 32 - - 10 - - - -1.2 V - - -40 A tr Rise Time td(off) Turn-Off Delay Time VGS = -10V,VDS = -20V, ID= -20A VGS = -10V, VDD = -20V, RG = 3Ω, ID= -20A tf Fall Time nC ns Drain-Source Body Diode Characteristics VSD Diode Forward Voltage4 Continuous Source Current TC=25°C IS = -20A, VGS = 0V IS - Note : 1. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. 2. The EAS data shows Max. rating . The test condition is VDD= -25V, VGS= -10V, L= 0.1mH, IAS= -34A. 3. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on the user's specific board design. 4. The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%. 5. This value is guaranteed by design hence it is not included in the production test. V01 2 www.sourcechips.com SM4185T9RL Typical Characteristics 40 40 VDS= -5V VGS = -10V Drain current -ID (A) Drain current -ID (A) VGS = -4.5V 30 VGS = -3.5V VGS = -3V 20 10 VGS = -2.5V 0 0 1 2 3 4 30 20 10 0 5 Drain−source voltage -VDS (V) 0 Figure 1. Output Characteristics 1 2 3 4 Gate−source voltage -VGS (V) Figure 2. Transfer Characteristics On-Resistance RDS (on) (mΩ) Source current -IS (A) 100 10 1 0.1 0.2 0.4 0.6 0.8 1.0 80 60 40 20 0 1.2 ID= -20A Source−drain voltage -VSD (V) 0 3 Figure 3. Forward Characteristics of Reverse 15 2.0 30 Normalized RDS (on) On-Resistance RDS (on) (mΩ) 12 2.5 VGS = -4.5V 20 VGS = -10V 10 1.5 1.0 0.5 0 10 20 Drain current -ID (A) Figure 5. RDS(ON) vs. ID V01 9 Figure 4. RDS(ON) vs. VGS 40 0 6 Gate−source voltage -VGS (V) 30 0.0 -50 -25 0 25 50 75 Temperature Tj(°C) 100 125 150 Figure 6. Normalized RDS(on) vs. Temperature 3 www.sourcechips.com SM4185T9RL 100000 Capacitance（pF） 10000 Ciss 1000 Coss 100 Crss 10 1 F=1.0MHz 0 10 20 30 40 Drain-source voltage -VDS（V） Figure 8. Gate Charge Characteristics 50 1000 40 100 Drain current -ID (A) Power Dissipation PD(W) Figure 7. Capacitance Characteristics 30 20 10 0 25 50 75 100 Case Temperature TC (°C) 125 100μs 10 Limited by RDS(on) 1 150 1ms DC 10ms Single Pulse TC=25℃ 0.1 0.01 0 10μs TJ=150℃ 0.1 1 10 100 Drain−source voltage -VDS (V) Figure 9. Power Dissipation Figure10. Safe Operating Area Normalized RθJC ℃/W) 10 1 Duty = 1.0 Duty = 0.5 0.1 Duty = 0.2 Duty = 0.1 Duty = 0.05 0.01 Duty = 0.02 Duty = 0.01 0.001 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Width(S) Figure 11. Normalized Maximum Transient Thermal Impedance V01 4 www.sourcechips.com 1 10 SM4185T9RL Test Circuit VGS RL Qg VDS VGS Qgs Qgd DUT IG=const Figure A. Gate Charge Test Circuit & Waveforms RL VDS RG VDD VGS DUT VGS Figure B. Switching Test Circuit & Waveforms L VDS ID RG VDD DUT VGS tp Figure C. Unclamped Inductive Switching Circuit & Waveforms V01 65 www.sourcechips.com SM4185T9RL Package Mechanical Data-TO-252 E Dimensions A B2 Ref. C2 D L H C B G Typ. A2 D1 Min. Typ. Max. A 2.10 2.50 0.083 0.098 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 5.30REF 0.248 0.209REF E 6.40 E1 4.63 G 4.47 4.67 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 6.80 0.252 0.176 7° V2 0.268 0.182 V1 L2 Inches Max. A2 D1 DETAIL A E1 Millimeters Min. 0.184 0.065 7° 0° 6° 0° 6° DETAIL A TO-252 eel Spectification-TO-252 B P2 A A B0 F W t1 B 5° A A K0 P1 A0 V01 Dimensions T E P0 B B 20 Ref. Millimeters Inches Min. Typ. Max. Min. Typ. W 15.90 16.00 16.10 0.626 0.630 0.634 E 1.65 1.75 1.85 0.065 0.069 0.073 Max. F 7.40 7.50 7.60 0.291 0.295 0.299 D0 1.40 1.50 1.60 0.055 0.059 0.063 0.063 D1 1.40 1.50 1.60 0.055 0.059 P0 3.90 4.00 4.10 0.154 0.157 0.161 P1 7.90 8.00 8.10 0.311 0.315 0.319 P2 1.90 2.00 2.10 0.075 0.079 0.083 0.276 A0 6.85 6.90 7.00 0.270 0.271 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 2.88 0.105 0.109 0.113 T 0.24 t1 0.10 10P0 39.80 66 www.sourcechips.com 0.27 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583