MOT4N65D

MOT4N65C MOT4N65D N-CHANNEL MOSFET „ PRODUCT CHARACTERISTICS VDSS RDS(on)Typ(@ V GS =10 V) Qg@type ID Symbol 650V 2.41Ω 19nC 4A 2.Drain 1.Gate „ APPLICATIONS * High frequency switching mode power supply * Electronic ballast * LED power supplies 3.Source  FEATURES * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness 1 2 3 TO-252 „ ORDER INFORMATION Order codes Halogen-Free Halogen N/A MOT4N65D N/A MOT4N65C Package TO-252 TO-251 1 2 3 TO-251 Packing 2500 pieces /Reel 70 pieces /Tube  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER UNIT SYMBOL RATINGS Drain-Source Voltage VDSS V 650 Gate-Source Voltage VGSS V ±30 4.0 A Avalanche Current (Note 2) I AR ID 4.0 A Continuous Drain Current IDM 16 A Pulsed (Note 2) mJ Single Pulsed (Note 3) E AS 260 Avalanche Energy mJ E AR Repetitive (Note 2) 10.6 V/ns dv/dt Peak Diode Recovery dv/dt (Note 4) 4.5 W PD Power Dissipation 50 °С TJ +150 Junction Temperature TOPR -55 ~ +150 °С Operating Temperature TSTG °С Storage Temperature -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C -1- www.mot-mos.com MOT4N65C MOT4N65D N-CHANNEL MOSFET „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER Off characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS MIN TYP MAX UNIT VGS = 0V, ID = 250μA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 650 - - 1 100 -100 V μA nA nA VDS = VGS, ID = 250μA VGS = 10V, ID = 2.0A 2.0 - 2.41 4.0 2.8 V Ω VDS=25V, VGS=0V, f=1.0 MHz - 520 75 13 - pF pF pF VDS=300V, VGS=10V, ID=3.0A (Note 1, 2) - - VDD=50V, VGS=10V, ID =0.5A, RG =25Ω (Note 1, 2) - 19 3.5 5.8 9.0 22 53 42 - nC nC nC ns ns ns ns - - 4 A - - 16 A - - 1.4 - V ns μC On characteristics Gate Threshold Voltage Static Drain-Source On-State Resistance Dynamic characteristics VGS(TH) RDS(ON) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching characteristics CISS COSS CRSS Total Gate Charge (Note 1) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time (Note 1) Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-source diode diode characteristics QG QGS QGD tD(ON) tR tD(OFF) tF Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=4.0A , VGS=0V Body Diode Reverse Recovery Time trr IS=4.0A , VGS=0V di/dt=100A/μs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. -2- 290 1.65 www.mot-mos.com MOT4N65C MOT4N65D N-CHANNEL MOSFET  TY PICAL CHARACTERISTICS 80 PD , Power Dissipation ，Watts Id , Drain Current , Amps 100 10 100us 1 1ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 0 .1 DC 10ms 70 60 50 40 30 20 10 0 0 .0 1 1 10 100 V d s , D r a in - t o - S o u r c e V o lta g e , V o lts 0 1000 Figure 1 Maximum Forward Bias Safe Operating Area 8 VGS=10V Id , Drain Current , Amps 3 2 150 250us Pluse Test Tc = 25℃ 5 4 125 Figure 2 Maximum Power Dissipation vs Case Temperature 6 Id , Drain Current , Amps 75 50 100 TC , Case Temperature , C 25 6 VGS=7V 4 VGS=5V VGS=6V VGS=4V 2 1 0 0 0 25 75 100 125 50 TC , C ase Tem perature , C 150 0 Figure 3 Maximum Continuous Drain Current vs Case Temperature 10 15 20 Vds , Drain-to-Source Voltage , Volts 25 Figure 4 Typical Output Characteristics 8 Isd, Reverse Drain Current , Amps 9 Id , Drain Current , Amps 5 250us Pulse Test VDS=10V 7.5 6 4.5 +25℃ 3 +150℃ 1.5 0 7 6 5 4 +150℃ 3 +25℃ 2 1 0 2 4 6 8 Vgs , Gate to Source Voltage , Volts 10 0 0.2 0.4 0.6 0.8 1 Vsd , Source - Drain Voltage , Volts Figure 7 Typical Body Diode Transfer Characteristics Figure 6 Typical Transfer Characteristics -3- www.mot-mos.com 1.2 MOT4N65C MOT4N65D N-CHANNEL MOSFET  TY PICAL CHARACTERISTICS(Cont.) Rds(on), Drain to Source ON Resistance, Nomalized Rds(on), Drain to Source ON Resistance, Ohms 4 PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX Tc =25 ℃ 3.5 VGS=10V 3 2.5 2.5 PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX VGS=10V ID=2A 2.25 2 1.75 1.5 1.25 1 0.75 2 0.5 0 1 2 3 Id , Drain Current , Amps -50 4 150 1.15 1.15 1.1 Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs(th),Threshold Voltage, Nomalized 50 100 Tj, Junction temperature , C Figure 9 Typical Drian to Source on Resistance vs Junction Temperature Figure 8 Typical Drain to Source ON Resistance vs Drain Current 1.05 1 0.95 0.9 VGS=0V ID=250μA 0.85 0.8 0.75 1.05 VGS=0V ID=250μA 0.95 0.85 0.7 0.65 -75 -50 -25 0.75 -55 0 25 50 75 100 125 150 175 Tj, Junction temperature , C -5 20 45 70 95 120 Tj, Junction temperature , C 145 170 12 Vgs , Gate to Source Voltage ,Volts 10000 1000 Ciss 100 Coss 10 -30 Figure 11 Typical Breakdown Voltage vs Junction Temperature Figure 10 Typical Theshold Voltage vs Junction Temperature Capacitance , pF 0 VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 10 VDS=520V VDS=325V VDS=130V 8 6 4 2 Crss ID=4A 0 1 0.1 1 10 Vds , Drain - Source Voltage , Volts 0 100 3 6 9 Qg , Total Gate Charge , nC 12 15 Figure 13 Typical Gate Charge vs Gate to Source Voltage Figure 12 Typical Capacitance vs Drain to Source Voltage -4- www.mot-mos.com MOT4N65C MOT4N65D N-CHANNEL MOSFET n TO-251-3L PACKAGE OUTLINE DIMENSIONS -5- www.mot-mos.com MOT4N65C MOT4N65D N-CHANNEL MOSFET n TO-252-2L PACKAGE OUTLINE DIMENSIONS -6- www.mot-mos.com