MOT5N50D

MOT5N50C MOT5N50D N-CHANNEL MOSFET Symbol „ PRODUCT CHARACTERISTICS VDSS RDS(on)typ(@VGS =10 V) Qg@type ID 2.Drain 500V 1.2Ω 18nC 5A 1.Gate „ APPLICATIONS • High frequency switching mode power supply • Electronic ballast • LED power supply 3.Source „ FEATURES * Fast Switching Capability 1 2 3 * Avalanche Energy Specified 1 * Improved dv/dt Capability, High Ruggedness 2 3 TO-251 TO-252 „ ORDER INFORMATION Order codes Halogen Halogen-Free N/A N/A Package TO-252 TO-251 MOT5N50D MOT5N50C Packing 2500 pieces /Reel 70 pieces /Tube  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) SYMBOL PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID I DM E AS dv/dt RATINGS 500 ±30 5 10 151 4.5 UNIT V V A A mJ V/ns W 50 Power Dissipation PD +150 °C Junction Temperature TJ TSTG °C Storage Temperature -55~+150 Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4. ISD ≤ 5.0A, di/dt ≤100A/μs, VDD ≤BVDSS, Starting TJ = 25°C -1- www.mot-mos.com MOT5N50C MOT5N50D N-CHANNEL MOSFET  ELECTRICAL CHARACTERISTICS (TC = 25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA VDS=500V, VGS=0V Drain-Source Leakage Current IDSS VDS=400V, TC=125°C Forward VGS=30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS 500 - 0.5 - - V V/°C 1 µA 10 100 nA -100 nA Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS VGS(TH) RDS(ON) VDS=VGS, ID=250µA VGS=10V, ID=2.5A 2.0 - 1.2 4.0 1.5 V Ω CISS COSS CRSS VGS=0V, VDS=25V, f=1.0MHz - 625 80 15 - pF pF - 18 2.2 9.7 12 46 50 48 - nC nC nC ns ns ns ns - - 5 A - - 20 A - - 1.4 - V ns uC Total Gate Charge QG VGS=10V, VDS=400V, Gate to Source Charge QGS ID=5A (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=250V, ID=5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature -2- IS=5A, VGS=0V IS=5A, VGS=0V, dIF/dt=100A/µs (Note 1) 240 0.25 www.mot-mos.com pF MOT5N50C MOT5N50D N-CHANNEL MOSFET  TY PICAL CHARACTERISTICS Drain Current vs. Drain-Source Voltage 4.8 Note: 1.TA=25°C 2.Pulse test 6 Drain-Source On-Resistance, RDS(ON) (Ω) Drain Current, ID (A) 8 Drain-Source On-Resistance vs. Gate-Source Voltage VGS=6~10V 4 5V 2 3.6 5A 2.4 5 10 0 20 15 ID=2.5A 1.2 0 0 Note: 1.TA=25°C 2.Pulse test 2 Drain-Source Voltage, VDS (V) 1000 Capacitance, C (pF) 8 6 4 CISS 100 COSS 10 CRSS 2 0 1 0 2.5 2 Total Gate Charge, QG (nC) 10 20 30 40 Drain-Source Voltage, VDS (V) Drain-Source On-Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature 2 4 6 8 10 12 0 14 1.4 VGS=10V ID=2.5A Pulsed Drain-Source Breakdown Voltage Normalized Gate-Source Voltage, VGS (V) VDS=400V VGS=10V ID=5A Pulsed 10 10 Capacitance Characteristics Gate Charge Characteristics 12 Drain-Source On-Resistance Normalized 4 6 8 Gate-Source Voltage, VGS (V) 1.5 1 0.5 0 25 100 75 125 ID=0.25mA Pulsed 1.2 1 0.8 150 50 25 100 75 125 150 Junction Temperature, TJ (°C) Junction Temperature, TJ (°C) -3- www.mot-mos.com MOT5N50C MOT5N50D N-CHANNEL MOSFET  TY PICAL CHARACTERISTICS(Cont.) Gate Threshold Voltage vs. Junction Temperature 1.1 Source Current vs. Source-Drain Voltage 10 1 Source Current, IS (A) Gate Threshold Voltage Normalized ID=0.25mA Pulsed 0.9 0.8 25°C 1 0.7 0.6 25 5 100 75 125 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 150 Junction Temperature, TJ (°C) Source-Drain Voltage, VSD (V) Drain Current vs. Gate-Source Voltage Drain-Source On-Resistance vs. Drain Current 3 Drain-Source On-Resistance, RDS(ON) (Ω) TA=25°C Pulsed 4 Drain Current, ID (A) TA=150°C 3 2 1 0 TA=25°C VGS=10V Pulsed 2 1 0 2 4 6 8 0 Power Dissipation vs. Junction Temperature 6 8 10 Drain Current vs. Junction Temperature 6 50 Drain Current, ID (A) Power Dissipation, PD (W) 4 Drain Current, ID (A) Gate-Source Voltage, VGS (V) 60 2 40 30 20 4 2 10 0 0 0 25 50 75 100 125 Junction Temperature, TJ (°C) 25 150 -4- 50 100 75 125 Junction Temperature, TJ (°C) 150 www.mot-mos.com MOT5N50C MOT5N50D N-CHANNEL MOSFET  TY PICAL CHARACTERISTICS(Cont.) Safe Operating Area TO-252 Drain Current, ID (A) 10 MAX Operation in this area is limited by RDS(ON) 100us 1ms 1 10ms DC 0.1 0.01 TJ=150°C TC=25°C Single Pulse 1 10 100 1000 Drain-Source Voltage, VDS (V) -5- www.mot-mos.com MOT5N50C MOT5N50D N-CHANNEL MOSFET n TO-251-3L PACKAGE OUTLINE DIMENSIONS -6- www.mot-mos.com MOT5N50C MOT5N50D N-CHANNEL MOSFET n TO-252 PACKAGE OUTLINE DIMENSIONS -7- www.mot-mos.com