MOT5N65D

MOT5N65C MOT5N65D N-CHANNEL MOSFET „ PRODUCT CHARACTERISTICS VDSS 650V RDS(on)typ(@ V GS =10 V) 2.2Ω Qg@type 15nC ID 5A Symbol 2.Drain „ APPLICATIONS 1.Gate * High frequency switching mode power supply * Electronic ballast * LED power supplies 3.Source „ FEATURES * High Switching Speed 1 2 3 TO-252 „ ORDER INFORMATION Order codes Halogen Halogen-Free N/A N/A Package TO-252 TO-251 MOT5N65D MOT5N65C 1 2 3 TO-251 Packing 2500 pieces /Reel 70 pieces /Tube  ABSOLUTE MAXIMUM RATINGS (T = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous ID 5 A Drain Current Pulsed (Note 2) IDM 10 A Avalanche Energy Single Pulsed (Note 3 EAS 112 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.2 V/ns 54 W TO-251/252 PD Power Dissipation Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 4.73A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4. ISD ≤ 7.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C -1- www.mot-mos.com MOT5N65C MOT5N65D N-CHANNEL MOSFET „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER Off characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse On characteristics Gate Threshold Voltage Static Drain-Source On-State Resistance Dynamic characteristics IGSS VGS(TH) RDS(ON) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching characteristics CISS COSS CRSS Total Gate Charge (Note 1) Gateource Charge Gate-Drain Charge Turn-on Delay Time (Note 1) Rise Time Turn-off Delay Time Fall-Time Source-drain diode ratings and characteristics QG QGS QGD tD(ON) tR tD(OFF) tF TEST CONDITIONS VGS=0V, ID= 250μA VDS=650V, VGS=0V VGS=30V, VDS=0V VGS=-30V, VDS=0V 650 - - 10 100 -100 V µA nA nA VDS=VGS, ID=250μA VGS=10V, ID=2.5A 2.0 - 2.2 4.0 2.6 V Ω VGS=0V, VDS=25V, f=1.0 MHz - 623 62 2.9 - pF pF pF VDS=100V, VGS=10V, ID=2.0A IG=1mA (Note 1, 2) - - VDS=30V, VGS=10V, ID=0.5A, RG=25Ω (Note 1, 2) - 15 5.6 2.5 4.4 24 122 25 - nC nC nC ns ns ns ns - - - 328 2.65 510 1.4 - A A V ns µC Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD VGS=0V, IS=5.0A Reverse Recovery Time (Note 1) trr VGS=0V, IS=5.0A, dIF/dt=100A/µs (Note1) Reverse Recovery Charge Qrr Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. -2- MIN TYP MAX UNIT - www.mot-mos.com MOT5N65C MOT5N65D N-CHANNEL MOSFET „ TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + ISD - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms -3- www.mot-mos.com MOT5N65C MOT5N65D N-CHANNEL MOSFET „ TEST CIRCUITS AND WAVEFORMS(Cont.) RL VDS VDS 90% VGS RG VDD VGS D.U.T. 10% tD(ON) Pulse Width≤ 1μs tD(OFF) tF tR Duty Factor≤0.1% Switching Test Circuit Switching Waveforms VGS QG Same Type as D.U.T. QGS VDS QGD VGS DUT Charge Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD VDD ID(t) VDS(t) VDD D.U.T. tp tp Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms -4- www.mot-mos.com MOT5N65C MOT5N65D N-CHANNEL MOSFET Drain Current vs. Drain-Source Voltage 6 Note: 1.TA=25°C 5 2.Pulse test VGS=6~10V 4 5.5V 3 2 5V 1 0 0 4 8 12 Drain-Source On-Resistance vs. Gate-Source Voltage 5 Note: 1.TA=25°C 2.Pulse test Drain-Source On-Resistance, RDS(ON) (Ω) Drain Current, ID (A)  TY PICAL CHARACTERISTICS 4 3 ID=5A 2.5A 2 1 16 4 Drain-Source Voltage, VDS (V) 7 8 10 Capacitance Characteristics VDS=100V VGS=10V ID=2.5A Pulsed 10 CISS 8 6 4 100 COSS 10 CRSS 2 0 9 1000 Capacitance, C (pF) Gate-Source Voltage, VGS (V) 6 Gate-Source Voltage, VGS (V) Gate Charge Characteristics 12 1 5 0 10 15 0 Total Gate Charge, QG (nC) Drain-Source On-Resistance vs. Junction Temperature 4 3 2 1 0 25 50 75 100 125 ID=0.25mA Pulsed 1.2 1.1 1 0.9 150 10 20 30 40 50 60 70 80 90 Drain-Source Voltage, VDS (V) Breakdown Voltage vs. Junction Temperature 1.3 VGS=10V ID=2.5A Pulsed Drain-Source Breakdown Voltage Normalized Drain-Source On-Resistance Normalized 5 25 50 75 100 125 150 Junction Temperature, TJ (°C) Junction Temperature, TJ (°C) -5- www.mot-mos.com MOT5N65C MOT5N65D N-CHANNEL MOSFET  TY PICAL CHARACTERISTICS(Cont.) Gate Threshold Voltage vs. Junction Temperature 1.4 Source Current vs. Source-Drain Voltage 100 1.2 Source Current, IS (A) Gate Threshold Voltage Normalized ID=0.25mA Pulsed 1 0.8 TA=150°C 10 25°C 1 0.6 0.1 0.4 0.4 25 50 75 100 125 150 Drain Current vs. Gate-Source Voltage Drain-Source On-Resistance, RDS(ON) (Ω) Drain Current, ID (A) 4 3 2 1 0 2 0 4 6 1.2 1.4 TA=25°C VGS=10V Pulsed 3 2 1 8 0 1 2 3 4 5 6 Drain Current, ID (A) Gate-Source Voltage, VGS (V) Power Dissipation vs. Junction Temperature 60 1 Drain-Source On-Resistance vs. Drain Current 4 TA=25°C Pulsed 5 0.8 Source-Drain Voltage, VSD (V) Junction Temperature, TJ (°C) 6 0.6 Drain Current vs. Junction Temperature 5 50 Drain Current, ID (A) Power Dissipation, PD (W) TO-251 40 30 20 3 2 1 10 0 4 0 25 50 75 100 125 0 150 25 50 75 100 125 150 Junction Temperature, TJ (°C) Junction Temperature, TJ (°C) -6- www.mot-mos.com MOT5N65C MOT5N65D N-CHANNEL MOSFET n TO-251-3L PACKAGE OUTLINE DIMENSIONS -7- www.mot-mos.com MOT5N65C MOT5N65D N-CHANNEL MOSFET n TO-252-2L PACKAGE OUTLINE DIMENSIONS -8- www.mot-mos.com