MOT9N50C
MOT9N50D
N-CHANNEL MOSFET
PRODUCT CHARACTERISTICS
VDSS
RDS(on)typ.(@V GS =10 V)
Qg@type
ID
Symbol
500V
0.7Ω
28nC
9A
2.Drain
1.Gate
APPLICATIONS
• High frequency switching mode power supply
• Electronic ballast
• LED power supply
3.Source
FEATURES
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
1 2
3
TO-252
1
2
3
TO-251
ORDER INFORMATION
Order codes
Halogen-Free
Halogen
N/A
N/A
Package
TO-252
TO-251
MOT9N50D
MOT9N50C
Packing
2500 pieces /Reel
70 pieces /Tube
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
RATINGS
UNIT
SYMBOL
V
VDSS
Drain-Source Voltage
500
V
VGSS
±30
Gate-Source Voltage
9 (Note 5)
ID
Continuous (TC=25°C)
A
Drain Current
A
36 (Note 5)
I DM
Pulsed (Note 2)
A
9
Avalanche Current (Note 2)
I AR
EAS
360
mJ
Single Pulsed (Note 3)
Avalanche Energy
mJ
13.5
Repetitive (Note 4)
E AR
dv/dt
V/ns
4.5
Peak Diode Recovery dv/dt (Note 4)
44
Power Dissipation
W
PD
W/°C
0.35
Derate above 25°C
TJ
°C
Junction Temperature
+150
-55~+150
°C
TSTG
Storage Temperature
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 8mH, IAS = 9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Drain current limited by maximum junction temperature
-1-
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MOT9N50C
MOT9N50D
N-CHANNEL MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
Off characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
On characteristics
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Dynamic characteristics
IGSS
VGS(TH)
RDS(ON)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching characteristics
CISS
COSS
CRSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Source-drain diode ratings and characteristics
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VDS=400V, TC=125°C
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
500
-
-
VDS=VGS, ID=250µA
VGS=10V, ID=4.5A
2.0
-
0.7
4.0
0.73
V
Ω
-
790
130
24
-
pF
pF
pF
-
28
4
15
18
65
93
64
-
nC
nC
nC
-
-
9
36
1.4
-
A
A
V
ns
µC
VGS=0V, VDS=25V, f=1.0MHz
VGS=10V, VDS=400V, ID=9A
(Note 1, 2)
VDD=250V, ID=9A, RG=25Ω
(Note 1, 2)
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=9A, VGS=0V
IS=9A, VGS=0V, dIF/dt=100A/µs
Body Diode Reverse Recovery Time
trr
(Note 1)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
-2-
MIN TYP MAX UNIT
335
2.95
-
V
1
µA
10
+100 nA
-100 nA
ns
ns
ns
ns
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MOT9N50C
MOT9N50D
N-CHANNEL MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
IAS
L
10V
ID(t)
tP
DUT
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
-3-
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MOT9N50C
MOT9N50D
N-CHANNEL MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
-4-
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MOT9N50C
MOT9N50D
N-CHANNEL MOSFET
n TO-251 PACKAGE OUTLINE DIMENSIONS
-5-
www.mot-mos.com
MOT9N50C
MOT9N50D
N-CHANNEL MOSFET
n TO-252 PACKAGE OUTLINE DIMENSIONS
-6-
www.mot-mos.com
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