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MOT9N50D

MOT9N50D

  • 厂商:

    MOT(仁懋)

  • 封装:

    TO252

  • 描述:

    电压VDSS500V,导通电阻Rds0.72欧,电荷量Qg35nC,电流ID9A

  • 数据手册
  • 价格&库存
MOT9N50D 数据手册
MOT9N50C MOT9N50D N-CHANNEL MOSFET „ PRODUCT CHARACTERISTICS VDSS RDS(on)typ.(@V GS =10 V) Qg@type ID Symbol 500V 0.7Ω 28nC 9A 2.Drain 1.Gate „ APPLICATIONS • High frequency switching mode power supply • Electronic ballast • LED power supply 3.Source „ FEATURES * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 1 2 3 TO-252 1 2 3 TO-251 „ ORDER INFORMATION Order codes Halogen-Free Halogen N/A N/A Package TO-252 TO-251 MOT9N50D MOT9N50C Packing 2500 pieces /Reel 70 pieces /Tube „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER RATINGS UNIT SYMBOL V VDSS Drain-Source Voltage 500 V VGSS ±30 Gate-Source Voltage 9 (Note 5) ID Continuous (TC=25°C) A Drain Current A 36 (Note 5) I DM Pulsed (Note 2) A 9 Avalanche Current (Note 2) I AR EAS 360 mJ Single Pulsed (Note 3) Avalanche Energy mJ 13.5 Repetitive (Note 4) E AR dv/dt V/ns 4.5 Peak Diode Recovery dv/dt (Note 4) 44 Power Dissipation W PD W/°C 0.35 Derate above 25°C TJ °C Junction Temperature +150 -55~+150 °C TSTG Storage Temperature Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 8mH, IAS = 9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 5. Drain current limited by maximum junction temperature -1- www.mot-mos.com MOT9N50C MOT9N50D N-CHANNEL MOSFET  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER Off characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse On characteristics Gate Threshold Voltage Static Drain-Source On-State Resistance Dynamic characteristics IGSS VGS(TH) RDS(ON) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching characteristics CISS COSS CRSS Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time Source-drain diode ratings and characteristics QG QGS QGD tD(ON) tR tD(OFF) tF TEST CONDITIONS ID=250µA, VGS=0V VDS=500V, VGS=0V VDS=400V, TC=125°C VGS=+30V, VDS=0V VGS=-30V, VDS=0V 500 - - VDS=VGS, ID=250µA VGS=10V, ID=4.5A 2.0 - 0.7 4.0 0.73 V Ω - 790 130 24 - pF pF pF - 28 4 15 18 65 93 64 - nC nC nC - - 9 36 1.4 - A A V ns µC VGS=0V, VDS=25V, f=1.0MHz VGS=10V, VDS=400V, ID=9A (Note 1, 2) VDD=250V, ID=9A, RG=25Ω (Note 1, 2) Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=9A, VGS=0V IS=9A, VGS=0V, dIF/dt=100A/µs Body Diode Reverse Recovery Time trr (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature -2- MIN TYP MAX UNIT 335 2.95 - V 1 µA 10 +100 nA -100 nA ns ns ns ns www.mot-mos.com MOT9N50C MOT9N50D N-CHANNEL MOSFET  TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID IAS L 10V ID(t) tP DUT VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms -3- www.mot-mos.com MOT9N50C MOT9N50D N-CHANNEL MOSFET  TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop -4- www.mot-mos.com MOT9N50C MOT9N50D N-CHANNEL MOSFET n TO-251 PACKAGE OUTLINE DIMENSIONS -5- www.mot-mos.com MOT9N50C MOT9N50D N-CHANNEL MOSFET n TO-252 PACKAGE OUTLINE DIMENSIONS -6- www.mot-mos.com
MOT9N50D 价格&库存

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