BCD50N06

50N06 60V N-Channel Power MOSFET TO-263 TO-252 TO-251 TO-220 Features ⚫ Low FOM RDS(on)×Qgd ⚫ 100% avalanche tested ⚫ Easy to use/drive ⚫ RoHS compliant Drain Applications ⚫ DC/DC Converter ⚫ Battery Protection Charge/Discharge Gate ⚫ Load Switch ⚫ Synchronous Rectification Source Key Performance Parameters Parameter Value Unit VDS@ Tc=25℃ 60 V RDS(on),max@10V 17 mΩ RDS(on),max@4.5V 23 mΩ Qg,typ 40 nC ID@Tc=25℃ 50 A ID,pulse 200 A EAS1) 98 mJ Device Marking and Package Information Device Package Marking E50N06 TO-263 BCE5N06 D50N06 TO-252 BCD5N06 H50N06 TO-251 BCH5N06 T50N06 TO-220 BCT5N06 1 50N06 60V N-Channel Power MOSFET Absolute Maximum Ratings TA = 25ºC, unless otherwise noted Parameter Symbol Values Unit VDS 60 V Drain-Source Voltage(VGS=0V) Continuous Drain Current2) TC = 25ºC 50 ID TC = 100ºC A 32 Pulsed Drain Current3) ID,pulse 200 A Gate-Source Voltage VGSS ±20 V Single Pulse Avalanche Energy1) EAS 98 mJ Power Dissipation PD 62.5 W TJ, Tstg -55~+150 ºC Symbol Max. Unit Thermal Resistance, Junction-to-Case RthJC 2 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 62 ºC/W Operating Junction and Storage Temperature Range Thermal Resistance Parameter Notes 1) L=0.5mH, VDD=30V, Start TJ=25℃. 2) Limited by maximum junction temperature. 3) Repetitive Rating: Pulse width limited by maximum junction temperature. 2 50N06 60V N-Channel Power MOSFET Electrical Characteristics TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 60 -- -- VDS = 60V VGS = 0V, TJ = 25ºC -- -- 1 VDS = 60V VGS = 0V, TJ = 125ºC -- -- 100 IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.2 1.8 2.5 V VGS = 10V, ID = 20A -- 13.5 17 mΩ Drain-Source On-State-Resistance RDS(on) VGS = 4.5V, ID = 20A -- 18 23 mΩ f = 1.0MHz open drain -- 1.4 -- Ω -- 1889 -- -- 113 -- Static Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current V(BR)DSS μA IDSS Gate Resistance RG V Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 92 -- Total Gate Charge Qg -- 40 -- Gate-Source Charge Qgs -- 7.8 -- Gate-Drain Charge Qgd -- 8.3 -- VPlateau -- 3.7 -- Turn-on Delay Time td(on) -- 13 -- Turn-on Rise Time tr -- 25 -- Turn-off Delay Time td(off) -- 60 -- -- 9 -- -- -- 1.2 V Gate Plateau Voltage Turn-off Fall Time VGS = 0V, VDS = 30V f = 1.0MHz VDS = 30V, ID = 20A VGS = 10V VDS = 30V, VGS =10V RG = 3Ω, ID = 20A tf pF nC V ns Drain-Source Body Diode Characteristics Body Diode Forward Voltage VSD TJ = 25ºC, ISD = 20A VGS = 0V Continuous Diode Forward Current IS -- -- 50 A Reverse Recovery Time trr -- 29 -- ns Reverse Recovery Charge Qrr -- 21 -- nC IF = 20A, diF/dt = 100A/μs 3 50N06 60V N-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted 70 1000 PD, Power Dissipation (W) ID, Drain Current (A) Limited by RDS(on) 100 10 Single Pulse TC=25℃ TJ=150℃ 1 DC 60 50 40 30 20 10 0 0.1 0.1 1 10 0 100 25 50 VDS, Drain-to-Source Voltage (V) Figure 1. Maximum Safe Operating Area 125 150 60 10V 6V 50 ID, Drain Current (A) 50 40 30 20 30 3.5V 20 10 0 0 25 50 75 100 125 150 VGS=3.0V 0 1 2 VDS, Drain-to-Source Voltage (V) TC, Case Temperature (℃) Figure 3. Maximum Continuous Drain Current vs Case Temperature 10 4.0V 4.5V 40 10 ZθJC, Thermal Response (℃/W) 100 Figure 2. Maximum Power Dissipation vs Case Temperature 60 ID, Drain Current (A) 75 TC, Case Temperature (℃) 3 Figure 4. Typical output Characteristics 1 D = 1.0 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 0.1 0.01 0.001 0.000001 0.00001 0.0001 0.001 Notes: 1.Duty Cycle, D=t1/t2 2.TJM = PDM*RθJC + TC 0.01 0.1 T, Rectangular Pulse Duration (s) Figure 5. Maximum Effective Thermal Impedance, Junction to Case 4 1 10 50N06 60V N-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted 100 100 Is, Source Current (A) ID, Drain Current (A) TJ=150℃ TJ=150℃ 10 TJ=25℃ 1 0.1 Note: 1.VDS=5V 2.250μs Pulsed Test 0.01 10 TJ=25℃ 1 0.1 0.01 0.001 0 1 2 3 4 5 0.2 6 VGS, Gate-to-Source Voltage (V) 22 2 Pulsed Test TJ = 25℃ RDS(on), (Normalized) RDS(on), (mΩ) 16 14 12 VGS = 10V 1 1.2 Figure 7. Typical Body Diode Transfer Characteristics 1.6 1.4 1.2 1 0.8 Pulsed Test VGS = 10V ID = 20A 0.6 10 0.4 0 5 10 15 20 25 30 -50 ID, Drain Current (A) Figure 8. Drain-to-Source On Resistance vs Drain Current 1.12 VGS = VDS ID = 250μA 0.9 0.8 0.7 150 VGS = 0V ID = 250μA 1.08 1 0 50 100 TJ, Junction Temperature (℃) Figure 9. Normalized On Resistance vs Junction Temperature 1.1 BVDSS, (Normalized) 1.1 VGS(th), (Normalized) 0.8 1.8 VGS = 4.5V 18 1.2 0.6 VSD, Source-to-Drain Voltage (V) Figure 6. Typical Transfer Characteristics 20 0.4 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 0.6 -50 0 50 100 150 -50 0 50 100 150 TJ, Junction Temperature (℃) Figure 11. Normalized Breakdown Voltage vs Junction Temperature TJ, Junction Temperature (℃) Figure 10. Normalized Threshold Voltage vs Junction Temperature 5 50N06 60V N-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted 10 Vgs, Gate-to-Source Voltage (V) 10000 Capacitance (pF) Ciss 1000 Coss 100 Crss VGS=0V, f=1MHz VDS=30V ID=20A 8 6 4 2 0 10 0 20 40 60 VDS, Drain-to-Source Voltage (V) Figure 12. Capacitance Characteristics 0 10 20 30 40 Qg, Gate Charge (nC) Figure 13. Typical Gate Charge vs Gate to Source Voltage 6 50 50N06 60V N-Channel Power MOSFET Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform 7 50N06 60V N-Channel Power MOSFET Outlines TO-263 Package SYMBOL MIN NOM MAX A 4.4 4.5 4.6 A1 0 0.1 0.25 A2 2.2 2.4 2.6 b 0.76 -- 0.89 b1 0.75 0.8 0.85 b2 1.23 -- 1.37 b3 1.22 1.27 1.32 c 0.47 -- 0.6 c1 0.46 0.51 0.56 c2 1.25 1.3 1.35 D 9.1 9.2 9.3 D1 8 -- -- E 9.8 9.9 10 E1 7.8 -- -- e 8 2.54 BSC H 14.9 15.3 15.7 L 2 2.3 2.6 L1 1.17 1.27 1.4 L2 -- -- 1.75 L3 0.25 BSC L4 4.60 REF Ɵ 0° -- 8° Ɵ1 1° 3° 5° 50N06 60V N-Channel Power MOSFET Outlines TO-252 Package 9 SYMBOL MIN NOM MAX A 2.2 2.3 2.4 A1 0 -- 0.2 A2 0.9 1.035 1.17 b 0.645 -- 0.9 b3 5.13 5.326 5.46 c 0.43 -- 0.61 c2 0.41 -- 0.61 D 5.98 6.1 6.22 D1 5.244 -- -- E 6.4 6.6 6.73 E1 4.63 -- -- e 2.186 2.286 2.386 H 9.4 10.04 10.5 L 1.38 1.5 1.75 L1 2.6 2.872 3 L2 0.5 0.509 0.52 L3 0.88 -- 1.28 L4 0.5 -- 1 L6 1.5 1.7 1.95 Ɵ 0° -- 10° 50N06 60V N-Channel Power MOSFET Outlines TO-251 Package 10 SYMBOL MIN NOM MAX A 2.20 2.30 2.38 A1 0.90 1.04 1.17 b 0.56 -- 0.90 b4 5.20 5.33 5.46 b5 -- -- 1.05 c 0.43 -- 0.61 c2 0.43 -- 0.61 D 5.98 6.10 6.22 D1 5.2 -- -- E 6.40 6.60 6.73 E1 4.60 -- -- e 2.24 2.29 2.34 e1 4.47 4.57 4.67 H 16.18 16.50 16.82 L 9 9.35 9.65 L2 0.88 1.05 1.28 50N06 60V N-Channel Power MOSFET Outlines TO-220 Package 11 SYMBOL MIN NOM MAX A 4.37 4.535 4.7 A1 1.25 1.3 1.4 A2 2.2 2.4 2.6 b 0.7 --- 0.95 b1 1.17 --- 1.47 c 0.45 0.5 0.6 D 15.1 15.65 16.1 D1 8.8 9.15 9.4 D2 11.8 --- --- E 9.7 9.95 10.3 E1 7 --- --- e 2.54 BSC e1 5.08 BSC H1 6.25 6.5 6.85 L 12.75 13.29 13.8 L1 --- --- 3.5 ΦP 3.4 3.67 3.8 Q 2.6 --- 3