MOT15N10D

MOT15N10C MOT15N10D N-CHANNEL MOSFET „ PRODUCT CHARACTERISTICS VDSS RDS(on)Typ(@V GS =10 V) Symbol 100V 80mΩ 24nC 15A Qg@type ID 2.Drain „ APPLICATIONS 1.Gate * Electronic Ballast * Electronic Transformer * Switch Mode Power Supply 3.Source  FEATURES * * * * * Low On-Resistance Fast Switching High Input Resistance Rohs Compliant 4 4 X X 1 Package: TO-251 or TO-252（IPAK & DPAK） „ ORDER INFORMATION Order codes Halogen-Free 2 1 Package TO-252 TO-251 2 3 TO-251 TO-252 MOT15N10D MOT15N10C N/A N/A X 3 Halogen X Packing 2500 pieces /Reel 70 pieces /Tube  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS Drain Current Continuous TC=25°C, TJ=150°C TC=70°C, TJ=150°C ID Power Dissipation TC=25°C TC=70°C PD RATINGS 100 ±20 15 13.8 UNIT V V A A 34.7 22.2 -55~+150 W W °C RATINGS 3.6 UNIT °C/W TJ Operating Junction Temperature Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL 　　CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL Junction to Case (Note) θJC 　　 Note: The device mounted on 1in2 FR4 board with 2 oz copper. 　　 　　 　　 -1- www.mot-mos.com MOT15N10C MOT15N10D N-CHANNEL MOSFET „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER Off characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS IGSS Dynamic characteristics On characteristics Gate Threshold Voltage VGS(TH) Drain-Source On-State Resistance (Note) RDS(ON) Dynamic characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching characteristics CISS COSS CRSS Total Gate Charge QG Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD Gate-Resistance RG Turn-ON Delay Time tD(ON) Rise Time tR Turn-OFF Delay Time tD(OFF) Fall-Time tF Source-drain diode ratings and characteristics TEST CONDITIONS MIN TYP MAX UNIT ID=250µA, VGS=0V VDS=80V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 100 - - V 1 µA +100 nA -100 nA VDS=VGS, ID=250µA VGS=10V, ID=8A 1 - 80 3 100 V mΩ VGS=0V, VDS=15V, f=1MHz - 890 58 23 - pF pF pF - 24 13 4.6 7.6 0.9 14 33 39 5 - nC nC nC nC Ω ns ns ns ns VGS=10V, VDS=80V, ID=10A VGS=4.5V, VDS=80V, ID=10A VDS=0V, VGS=0V, f=1MHz VDS=50V, RL=5Ω, VGEN=10V, RG=1Ω - Drain-Source Diode Forward Voltage VSD IS=8A, VGS=0V 0.9 1.2 Note: Pulse test: pulse width≤300us, duty cycle≤2%, Guaranteed by design, not subject to production testing. -2- www.mot-mos.com V MOT15N10C MOT15N10D N-CHANNEL MOSFET  TY PICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 Drain Current vs. Gate Threshold Voltage 300 VDS=VGS 250 250 200 200 150 150 100 100 50 50 0 0 0 0 30 90 120 60 Drain-Source Breakdown Voltage, BVDSS (V) Drain-Source On-State Resistance Characteristics Drain Current vs. Source to Drain Voltage 10 VGS=10V 8 Drain Current, ID (A) Drain Current, ID (A) 10 0.4 1.6 0.8 1.2 2.0 2.4 Gate Threshold Voltage, VTH (V) 6 4 2 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 Drain to Source Voltage, VDS (V) 0 0 0.6 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) Safe Operating Area 100 TO-252 Drain Current, ID (A) MAX 10 100us 1ms 1 Operation in this area is limited by RDS(ON) 10ms DC 0.1 0.01 TJ=150°C TC=25°C Single Pulse 1 10 100 Drain-Source Voltage, VDS (V) -3- www.mot-mos.com MOT15N10C MOT15N10D N-CHANNEL MOSFET n TO-251-3L PACKAGE OUTLINE DIMENSIONS -4- www.mot-mos.com MOT15N10C MOT15N10D N-CHANNEL MOSFET n TO-252-2L PACKAGE OUTLINE DIMENSIONS -5- www.mot-mos.com