MS5N100/S/FT/FE/FD
N-channel 1000V – 3.5Ω - 5A
General features
Type
VDSS(@Tjmax)
MS5N100
RDS(on)
ID
1000 V
< 4.2 Ω
5A
MS5N100S
1000 V
< 4.2 Ω
5A
MS5N100FT
1000 V
< 4.2 Ω
5A
MS5N100FE
1000 V
< 4.2 Ω
5A
MS5N100FD
1000 V
< 4.2 Ω
5A
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Applications
Switching application
Order codes
Partnumber
Marking
Package
MS5N100
MS5N100
TO-3PH
MS5N100S
MS5N100S
TO-220F
MS5N100FT
MS5N100FT
TO-220
MS5N100FE
MS5N100FE
TO-263/D2PAK
MS5N100FD
MS5N100FD
TO-252/DPAK
Electrical ratings
Absolute maximum ratings
Value
Parameter
Symbol
Drain-source voltage(VGS=0)
VDS
1000
Gate-source voltage
VGS
±30
ID
5
Drain current(continuous)at
TC=25℃
Drain current(continuous)at
TC=100℃
TO-3PH
TO-220FP
Unit
TO-220/
TO-263
TO-252
V
A
ID
3
Drain current(pulsed)
IDM
18
18
18
18
Total dissipation at TC=25℃
PTOT
125
30
68
56
W
1
0.24
1
0.63
W/℃
Derating factor
H1.08
Maspower
1
MS5N100/S/FT/FE/FD
N-channel 1000V – 3.5Ω - 5A
Drain source ESD
(HBM-C=100pF,R=1.5KΩ)
Peak diode recovery voltage
slope
VESD(GS)
4000
V
dv/dt
4.5
V/ns
VISO
2500
v
-55 to 175
℃
Insulation withstand
voltage(RMS)from all three
leads to external heat sink
(t=1s TC=25℃)
Operating junction temperature
TJ
Storage temperature
TSTG
Thermal data
Parameter
Symbol
Value
TO-220FP TO-3PH
Unit
TO-220/
TO-252
TO-263
1
0.86
Thermal resistance junction
Rthj-case
4.2
1
℃/W
max
Thermal resistance
Rthj-case
5
A
T
350
mJ
junction-ambient max
Maximum lead temperature
for soldering purpose
Avalanche characteristics
Parameter
Symbol
Value
Unit
IAR
5
A
EAS
350
mJ
Avalanche current repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25℃ Id=lar Vdd=50V)
H1.08
Maspower
2
MS5N100/S/FT/FE/FD
N-channel 1000V – 3.5Ω - 5A
Electrical characteristics (TCASE=25℃
unless otherwise specified)
On/off states
Parameter
Symbol Test conditions Min Typ Max Unit
Drain-source breakdown voltage
V(BR)DSS
Zero gate voltage drain current
ID=1mA VGS=0
1000
V
VDS=Max rating
1
μA
TC=125℃
50
μA
±10
μA
3.5
4.5
V
3.5
4.2
Ω
IDSS
(VGS=0)
Gate body leakage current (VGS=0)
IGSS
VGS=±20V
Gate threshold voltage
VGS(th)
VDS=VGS ID=100μA
Static drain-source on resistance
RDS(on)
VGS=10V ID=1.75A
Dynamic
Parameter
Forward
transconductance
Symbol
Test conditions
gfs
VDS = 15 V, ID = 1.75A
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer
capacitance
Equivalent Output
capacitance
Min Typ
Max Unit
3
S
1154
106
VDS=25V,f=1MHz,VGS=0
Crss
Coss eq.
3
pF
21.3
VGS=0,VDS=0 to 800V
46.8
f=1MHz Gate DC Bias=0
Gate input resistance
Rg
Test signal level=20mV
2.2
Ω
open drain
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Rise time
tr
VDD = 500 V, ID = 1.75 A,
7.7
Turn-off-delay time
td(off)
RG = 4.7 Ω, VGS = 10 V
51.5
Fall time
tf
Source Drain Diode
Parameter
Symbol
Source Drain Current
H1.08
42
VDD=800V,ID=3.5A
nC
7.3
VGS=10V
21.7
22.5
ns
19
Test conditions
Min Typ
Max Unit
5
ISD
Maspower
A
3
MS5N100/S/FT/FE/FD
N-channel 1000V – 3.5Ω - 5A
Source Drain
Current(Pulsed)
ISDM
20
A
1.2
V
Forward On Voltage
VSD
ISD=5A,VGS=0V
Reverse Recovery Time
Trr
ISD=4A,di/dt=100A/μS
500
ns
Qrr
VR=100V,Tj=150℃
4.3
uC
20
A
Reverse Recovery
Charge
Reverse Recovery
Current
IRRM
Electrical characteristics (curves)
H1.08
Maspower
4
MS5N100/S/FT/FE/FD
N-channel 1000V – 3.5Ω - 5A
H1.08
Maspower
5
MS5N100/S/FT/FE/FD
N-channel 1000V – 3.5Ω - 5A
Package outline dimension
H1.08
Maspower
6
MS5N100/S/FT/FE/FD
N-channel 1000V – 3.5Ω - 5A
H1.08
Maspower
7
MS5N100/S/FT/FE/FD
N-channel 1000V – 3.5Ω - 5A
H1.08
Maspower
8