MS5N100FD

MS5N100/S/FT/FE/FD N-channel 1000V – 3.5Ω - 5A General features Type VDSS(@Tjmax) MS5N100 RDS(on) ID 1000 V < 4.2 Ω 5A MS5N100S 1000 V < 4.2 Ω 5A MS5N100FT 1000 V < 4.2 Ω 5A MS5N100FE 1000 V < 4.2 Ω 5A MS5N100FD 1000 V < 4.2 Ω 5A  Extremely high dv/dt capability  100% avalanche tested  Gate charge minimized  Very low intrinsic capacitances  Very good manufacturing repeatibility Applications  Switching application Order codes Partnumber Marking Package MS5N100 MS5N100 TO-3PH MS5N100S MS5N100S TO-220F MS5N100FT MS5N100FT TO-220 MS5N100FE MS5N100FE TO-263/D2PAK MS5N100FD MS5N100FD TO-252/DPAK Electrical ratings Absolute maximum ratings Value Parameter Symbol Drain-source voltage（VGS=0) VDS 1000 Gate-source voltage VGS ±30 ID 5 Drain current（continuous）at TC=25℃ Drain current（continuous）at TC=100℃ TO-3PH TO-220FP Unit TO-220/ TO-263 TO-252 V A ID 3 Drain current（pulsed） IDM 18 18 18 18 Total dissipation at TC=25℃ PTOT 125 30 68 56 W 1 0.24 1 0.63 W/℃ Derating factor H1.08 Maspower 1 MS5N100/S/FT/FE/FD N-channel 1000V – 3.5Ω - 5A Drain source ESD (HBM-C=100pF,R=1.5KΩ） Peak diode recovery voltage slope VESD(GS) 4000 V dv/dt 4.5 V/ns VISO 2500 v -55 to 175 ℃ Insulation withstand voltage(RMS)from all three leads to external heat sink (t=1s TC=25℃） Operating junction temperature TJ Storage temperature TSTG Thermal data Parameter Symbol Value TO-220FP TO-3PH Unit TO-220/ TO-252 TO-263 1 0.86 Thermal resistance junction Rthj-case 4.2 1 ℃/W max Thermal resistance Rthj-case 5 A T 350 mJ junction-ambient max Maximum lead temperature for soldering purpose Avalanche characteristics Parameter Symbol Value Unit IAR 5 A EAS 350 mJ Avalanche current repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25℃ Id=lar Vdd=50V) H1.08 Maspower 2 MS5N100/S/FT/FE/FD N-channel 1000V – 3.5Ω - 5A Electrical characteristics (TCASE=25℃ unless otherwise specified) On/off states Parameter Symbol Test conditions Min Typ Max Unit Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current ID=1mA VGS=0 1000 V VDS=Max rating 1 μA TC=125℃ 50 μA ±10 μA 3.5 4.5 V 3.5 4.2 Ω IDSS (VGS=0) Gate body leakage current (VGS=0) IGSS VGS=±20V Gate threshold voltage VGS(th） VDS=VGS ID=100μA Static drain-source on resistance RDS(on） VGS=10V ID=1.75A Dynamic Parameter Forward transconductance Symbol Test conditions gfs VDS = 15 V, ID = 1.75A Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Equivalent Output capacitance Min Typ Max Unit 3 S 1154 106 VDS=25V,f=1MHz,VGS=0 Crss Coss eq. 3 pF 21.3 VGS=0,VDS=0 to 800V 46.8 f=1MHz Gate DC Bias=0 Gate input resistance Rg Test signal level=20mV 2.2 Ω open drain Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time tr VDD = 500 V, ID = 1.75 A, 7.7 Turn-off-delay time td(off) RG = 4.7 Ω, VGS = 10 V 51.5 Fall time tf Source Drain Diode Parameter Symbol Source Drain Current H1.08 42 VDD=800V,ID=3.5A nC 7.3 VGS=10V 21.7 22.5 ns 19 Test conditions Min Typ Max Unit 5 ISD Maspower A 3 MS5N100/S/FT/FE/FD N-channel 1000V – 3.5Ω - 5A Source Drain Current(Pulsed) ISDM 20 A 1.2 V Forward On Voltage VSD ISD=5A,VGS=0V Reverse Recovery Time Trr ISD=4A,di/dt=100A/μS 500 ns Qrr VR=100V,Tj=150℃ 4.3 uC 20 A Reverse Recovery Charge Reverse Recovery Current IRRM Electrical characteristics (curves) H1.08 Maspower 4 MS5N100/S/FT/FE/FD N-channel 1000V – 3.5Ω - 5A H1.08 Maspower 5 MS5N100/S/FT/FE/FD N-channel 1000V – 3.5Ω - 5A Package outline dimension H1.08 Maspower 6 MS5N100/S/FT/FE/FD N-channel 1000V – 3.5Ω - 5A H1.08 Maspower 7 MS5N100/S/FT/FE/FD N-channel 1000V – 3.5Ω - 5A H1.08 Maspower 8