G180P06K

GOFORD ® G180P06K P-Channel Enhancement Mode Power MOSFET Description The G180P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS -60V ID (at VGS = -10V) -45A RDS(ON) (at VGS = -10V) < 18mΩ 100% Avalanche Tested Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Device Package Marking Packaging G180P06K TO-252 G180P06 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -60 V ID -45 A IDM -180 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 100 W EAS 144 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 45 ºC/W Maximum Junction-to-Case RthJC 1.25 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1580) GOFORD ® G180P06K Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -60 -- -- V IDSS VDS = -60V, VGS = 0V -- -- -1 uA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2 -2.5 -3.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = - 12A -- 15.5 18 mΩ Forward Transconductance gFS VDS = -5V,ID = -12A -- 20 -- S -- 5035 -- -- 250 -- -- 233 -- -- 46 -- -- 9.5 -- -- 10.5 -- -- 12 -- -- 15 -- -- 38 -- -- 15 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -30V, f = 1.0MHz VDD = -30V, ID = -20A, VGS = -10V VDD = -30V, ID = -20A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -45 A Body Diode Voltage VSD TJ = 25ºC, ISD = -12A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 165 -- nC Reverse Recovery Time Trr -- 27 -- ns IF = -20A, VGS = 0V di/dt=-500A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG 3. EAS condition : Tj=25 ,VDD=-50V,VG=-10V,L=0.5mH,Rg=25Ω www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1580) GOFORD ® G180P06K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1580) GOFORD ® G180P06K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 140 - ID, Drain Current (A) 120 -10V -6V 100 -5.5V 80 -5V 60 -4.5V 40 20 0 -ID, Drain Current (A) 140 1 2 3 100 80 60 25℃ 40 20 VGS= -4V 0 VDS= -5V 120 4 0 5 0 -VDS, Drain-to-Source Voltage (V) 19 18 VGS= -10V 15 14 13 12 0 5 10 15 20 6 4 2 0 25 4000 3000 2000 Coss Crss 20 30 40 50 30 40 50 60 -VDS Drain-Source Voltage(V) www.gofordsemi.com 20 -Is, Reverse Drain Current (A) Capacitance(pF) 5000 10 10 Figure 6. Source-Drain Diode Forward Ciss 0 0 Qg Gate Charge（nC） 7000 0 10 VDD = -30V ID = -20A 8 Figure 5. Capacitance 1000 8 10 -ID-Drain Current（A） 6000 6 Figure 4. Gate Charge -Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） 20 16 4 -VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance 17 2 TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 (A1580) GOFORD ® G180P06K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area Figure 7. Drain-Source On-Resistance VGS = -10V ID = - 12A 1.8 -ID, Drain Current(A) RDS(on), (Normalized) 2 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 TJ, Junction Temperature (ºC) ZthJC, Thermal Impedance (ºC/W) TJ(MAX)=150℃ TC=25℃ -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance 1.25°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1580) GOFORD ® G180P06K TO-252 Package Information Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 L5 θ www.gofordsemi.com MIN. 2.2 0 0.97 0.68 5.2 0.43 5.98 6.4 4.63 9.4 1.38 0.88 0.5 1.65 0° Dimensions in Millimeters NOM. 2.3 　 1.07 0.78 5.33 0.53 6.1 5.30REF 6.6 　 2.286BSC 10.1 1.5 2.90REF 0.51BSC 　 　 1.8 　 TEL：0755-29961263 MAX. 2.4 0.2 1.17 0.9 5.5 0.63 6.22 6.8 　 10.5 1.75 1.28 1 1.95 8° FAX:0755-29961466 (A1580)