AOD4130

UMW R AOD4130 60V N-Channel MOSFET General Description D The AOD4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. G General Features VDS S ID (at VGS=10V) 60V 30A RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS=4.5V) < 30mΩ Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current Continuous Drain Current IAS, IAR Avalanche energy L=0.1mH C TC=25°C EAS, EAR Power Dissipation TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case www.umw-ic.com Steady-State Steady-State A mJ W 25 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s 27 36.5 52 PDSM TA=70°C A 5 PD TC=100°C A 74 Avalanche Current C B V 6.5 IDSM TA=70°C ±20 20 IDM TA=25°C Units V 30 ID C Maximum 60 Typ 12.4 34 2.4 RθJA RθJC 1 °C Max 20 50 2.9 Units °C/W °C/W °C/W UTD Semiconductor Co.,Limited UMW R AOD4130 60V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 74 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=55°C 5 Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 100 nA 2.8 V 24 30 mΩ 1 V 46 A 55 VGS=0V, VDS=30V, f=1MHz VGS=10V, VDS=30V, ID=20A µA A 0.76 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance 2.2 19.5 24 VGS=4.5V, ID=20A gFS Units V VDS=60V, VGS=0V Zero Gate Voltage Drain Current VSD Max 60 IDSS Coss Typ mΩ S 1265 1582 1900 pF 70 100 130 pF 40 67 95 pF 1.8 3.6 5.4 Ω 23 28.3 34 nC 11 13.4 16 nC 3.6 4.5 5.4 nC 4.3 7.2 10 nC VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 7.5 ns 6.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 15 22 30 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 53 76 100 33 ns 7.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using