MOT4N70D

MOT4N70C MOT4N70D N-CHANNEL MOSFET „ PRODUCT CHARACTERISTICS VDSS RDS(on)Typ( @VGS =10 V) Qg@type ID Symbol 700V 2.Drain 2.6Ω 15nC 4A „ APPLICATIONS 1.Gate * High frequency switching mode power supply * Electronic ballast * LED power supplies 3.Source  FEATURES * Ultra Low Gate Charge * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 4 4 1 3 N/A 1 Package TO-251 TO-252 MOT4N70C MOT4N70D 2 3 TO-251 TO-252 „ ORDER INFORMATION Order codes Halogen-Free Halogen N/A 2 Packing 70 pieces/Tube 2500 pieces /Reel  ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) SYMBOL RATINGS UNIT PARAMETER V 700 Drain-Source Voltage VDSS ±30 V Gate-Source Voltage VGSS 4 A Avalanche Current (Note 2) I AR A 4 Continuous ID Drain Current I DM A Pulsed (Note 2) 16 260 mJ Single Pulsed (Note 3) E AS Avalanche Energy mJ E AR 10.6 Repetitive (Note 2) dv/dt V/ns Peak Diode Recovery dv/dt (Note 4) 4.5 PD 49 Power Dissipation W °С +150 Junction Temperature TJ °С -55 ~ +150 Operating Temperature TOPR ° С Storage Temperature TSTG -55 ~ +150 Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 26.9mH, IAS = 4A, V DD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤ 4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C -1- www.mot-mos.com MOT4N70C MOT4N70D N-CHANNEL MOSFET  ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified) PARAMETER Off characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0 V, ID = 250 μA 700 VDS = 700 V, VGS = 0 V Forward VGS = 30 V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA, Referenced to 25°C On characteristics Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2A - V 10 μA 100 nA -100 - V/°С 0.6 2.6 4.0 2.8 V Ω Dynamic characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching characteristics CISS COSS CRSS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Source-drain diode ratings and characteristics tD(ON) tR tD(OFF) tF QG QGS QGD VDS = 25 V, VGS = 0 V, f = 1MHz - 520 70 8 - pF pF pF VDD = 350V, ID = 4A, RG = 25Ω (Note 1, 2) - - - 13 45 25 35 15 3.4 7.1 - ns ns ns ns nC nC nC - - 1.4 V - - 4 A - - 16 A - 250 1.5 - ns μC VDS= 560V, ID= 4A, VGS= 10 V (Note 1, 2) Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 4 A, dI/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature -2- www.mot-mos.com MOT4N70C MOT4N70D N-CHANNEL MOSFET  TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms -3- www.mot-mos.com MOT4N70C MOT4N70D N-CHANNEL MOSFET  TEST CIRCUITS AND WAVEFORMS(Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms -4- www.mot-mos.com MOT4N70C MOT4N70D N-CHANNEL MOSFET  TY PICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage 300 250 Drain Current, ID (µA) Drain Current, ID (µA) 250 200 150 100 200 150 100 50 50 0 0 1 2 4 5 6 3 Gate Threshold Voltage, VTH (V) 7 Drain Current, ID (A) 0 200 400 600 800 1000 1200 1400 Drain-Source Breakdown Voltage, BVDSS(V) Drain Current, ID (A) 0 Drain Current vs. Gate Threshold Voltage -5- www.mot-mos.com MOT4N70C MOT4N70D N-CHANNEL MOSFET n TO-251F-3L PACKAGE OUTLINE DIMENSIONS -6- www.mot-mos.com MOT4N70C MOT4N70D N-CHANNEL MOSFET n TO-252F-2L PACKAGE OUTLINE DIMENSIONS -7- www.mot-mos.com