NDT3055
N-CHANNEL MOSFET FOR SWITCHING
Unit:mm
SOT-223
。
10
6.50±0.2
3.00±0.1
0.75 (min)
7.0±0.3
■ Features
3.50±0.2
4
● VDS (V) = 60V
1
● ID = 3 A (VGS = 10V)
2
3
2.30 (typ)
0.250
0.84 (max)
0.66 (min)
1.80 (max)
MI
JS
1.6 ± 0.1
● RDS(ON) < 80mΩ (VGS = 10V)
Gauge Plane
0.02 ~ 0.1
1.Gate
2.Drain
3.Source
4.Drain
4.60 (typ)
O
CR
mi
Se
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Ta=25℃
Pulsed Drain Current
Thermal Resistance.Junction- to-Ambient
Rating
VDS
60
VGS
±20
ID
IDM
Ta=25℃
Ta=70℃
(Note.1)
(Note.2)
Junction Temperature
Storage Temperature Range
PD
RthJA
Unit
V
3
2.6
A
10
1.25
W
r
to
Power Dissipation
Symbol
uc
Ta=70℃
nd
co
Parameter
0.8
100
166
TJ
150
Tstg
-55 to 150
℃/W
℃
Note.1: Surface Mounted on FR4 Board, t ≤ 5 sec.
Note.2: Surface Mounted on FR4 Board
www.jsmsemi.com
第1/4页
NDT3055
N-CHANNEL MOSFET FOR SWITCHING
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250μA
Static Drain-Source On-Resistance
RDS(On)
MI
JS
Drain-Source Breakdown Voltage
On State Drain Current
ID(ON)
gFS
Input Capacitance
Ciss
Output Capacitance
O
CR
Forward Transconductance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-Off DelayTime
10
nA
3
V
VGS=10V, ID=2A
80
VGS=4.5V, ID=1.7A
85
4
VGS≥4.5V, VDS=4.5V
3
VDS=4.5V, ID=2A
4.6
S
240
VGS=0V, VDS=25V, f=1MHz
pF
50
15
VGS=0V, VDS=0V, f=1MHz
0.5
3.3
4.8
VGS=10V, VDS=30V, ID=2A
nC
1
7
15
10
20
17
35
6
15
tf
IS
VSD
VGS=4.5V, VDS=30V, ID=1A,
RL=30Ω,RG=6Ω
IS=1A,VGS=0V
ns
1
A
1.2
V
r
to
uc
Note.Pulse test; pulse width ≤ 300 us, duty cycle ≤ 2%.
Ω
10
0.8
tr
Turn-Off Fall Time
mΩ
A
td(on)
td(off)
uA
±100
1.5
Qgd
Maximum Body-Diode Continuous Current
Diode Forward Voltage
0.5
VGS≥4.5V, VDS=10V
Unit
V
VDS=60V, VGS=0V, TJ=55℃
nd
co
Turn-On Rise Time
Max
VDS=60V, VGS=0V
Qg
Qgs
Typ
60
ID=250μA, VGS=0V
mi
Se
Total Gate Charge
Min
www.jsmsemi.com
第2/4页
NDT3055
N-CHANNEL MOSFET FOR SWITCHING
■ Typical Characterisitics
Ou t p u t Ch ar ac t er i s t i c s
Tr an s f er Ch ar ac t er i s t i c s
12
12
I D - Drain Current (A)
9
4 V
6
3
0
0
2
4
9
6
3
3 V
T C = 125 C
25 C
6
8
0
10
0
1
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.4
)
4
5
300
C iss
200
100
V GS = 4.5 V
0.2
3
Capacitance
400
nd
co
r DS(on) - On-Resistance (
mi
Se
0.8
2
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.0
- 55 C
1, 2 V
O
CR
MI
JS
I D - Drain Current (A)
V GS = 10 thru 5 V
C oss
C rss
0.0
0
0
3
6
9
0
12
1.8
r DS(on) - On-Resistance ( )
(Normalized)
- Gate-to-Source Voltage (V)
V GS
2.0
V DS = 30 V
I D = 2.0 A
8
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Gate Charge
10
6
6
4
2
r
to
ID - Drain Current (A)
uc
V GS = 10 V
On-Resistance vs. Junction T emperature
V GS = 10 V
I D = 2.0 A
1.6
1.4
1.2
1.0
0.8
0
0
1
2
3
4
5
0.6
- 50
Qg - Total Gate Charge (nC)
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature ( C)
www.jsmsemi.com
第3/4页
NDT3055
N-CHANNEL MOSFET FOR SWITCHING
■ Typical Characterisitics
Source-Drain Diode Forward V oltage
On-Resistance vs. Gate-to-Source
0.6
10
Voltage
r DS(on) - On-Resistance (
I S - Source Current (A)
)
0.5
T J = 150 C
MI
JS
0.00
0.2
0.4
O
CR
1
T J = 25 C
0.6
0.8
1.0
0.4
0.3
ID = 2.0 A
0.2
0.1
0.0
0
1.2
V SD - S o u rce -to -D ra in V o lta g e (V )
2
4
8
10
V GS - Gate-to-Source Voltage (V)
Single Pulse Power
Threshold V oltage
0.4
12
mi
Se
ID = 250 A
0.2
Power (W)
- 0.0
- 0.2
9
6
nd
co
V GS(th) Variance (V)
6
- 0.4
3
- 0.6
.
- 25
0
25
50
75
100
125
0
150
0.01
TJ - Temperature ( C)
uc
- 0.8
- 50
0.1
1
r
to
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
100
10
Time (sec)
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
500
Square Wave Pulse Duration (sec)
www.jsmsemi.com
第4/4页
很抱歉,暂时无法提供与“NDT3055”相匹配的价格&库存,您可以联系我们找货
免费人工找货