IRFR3607TRPBF-VB

IRFR3607TRPBF www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 • TrenchFET® Power MOSFET RDS(on) () Max. ID (A) 0.0055 at VGS = 10 V 75a 0.0088 at VGS = 6.0 V 65a 0.0115 at VGS = 5.0 V 54 Qg (Typ.) 17.1 nC • 100 % Rg and UIS Tested APPLICATIONS • Primary Side Switching • Synchronous Rectification TO-252 • DC/AC Inverters D • LED Backlighting G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ± 20 Parameter TC = 70 °C TA = 25 °C 62.7 ID 28.6b, c 24.9b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C 75a IS 4.5b, c IAS 30 EAS 45 mJ 62.5 40 PD W 5b, c 3.2b, c TA = 70 °C Operating Junction and Storage Temperature Range A 150 TC = 25 °C Maximum Power Dissipation V 75a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t  10 s Symbol RthJA Typical 20 Maximum 25 Steady State RthJC 1.5 2.0 Unit °C/W Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. The TO-220 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 °C/W. 服务热线：400-655-8788 1 IRFR3607TRPBF www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 μA 80 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 37 mV/°C - 6.1 2.5 4.0 V ± 100 nA VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 55 °C 10 VDS  5 V, VGS = 10 V 30 μA A VGS = 10 V, ID = 20 A 0.0050 VGS = 6 V, ID = 15 A 0.0070 VGS = 5.0 V, ID = 10 A 0.0087 VDS = 10 V, ID = 20 A 60  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs 1855 VDS = 40 V, VGS = 0 V, f = 1 MHz VDS = 40 V,VGS = 10 V, ID = 10 A 35.5 54 VDS = 40 V, VGS = 6 V, ID = 10 A 22 33 17.1 26 VDS = 40 V,VGS = 4.5 V, ID = 10 A Qoss VDS = 40 V, VGS = 0 V Rg f = 1 MHz Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time td(on) tr td(off) 5.3 VDD = 40 V, RL = 4  ID  10 A, VGEN = 10 V, Rg = 1  57 0.5 86 1.3 2 12 24 8 16 32 64 tf 7 14 td(on) 14 28 tr td(off) nC 7.3 Qgd Output Charge Turn-On Delay Time pF 76 Gate-Drain Charge Gate Resistance 950 VDD = 40 V, RL = 4  ID  10 A, VGEN = 6.0 V, Rg = 1  tf 11 22 30 60 8 16  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD 75 TC = 25 °C 150 IS = 5 A 0.76 1.1 A V Body Diode Reverse Recovery Time trr 38 75 ns Body Diode Reverse Recovery Charge Qrr 36 70 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C 19 19 ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 服务热线：400-655-8788 IRFR3607TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 120 VGS = 10 V thru 6 V 100 VGS =5 V ID - Drain Current (A) ID - Drain Current (A) 80 60 40 20 80 TC = 25 °C 60 40 TC = 125 °C 20 VGS = 4 V VGS = 3 V 0 0.0 1.0 2.0 3.0 4.0 TC = - 55 °C 0 2 0.0 5.0 6 8 10 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0150 3500 0.0130 2800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 4 0.0110 VGS =5.0 V 0.0090 VGS = 6.0 V Coss 2100 Ciss 1400 700 0.0070 Crss VGS = 10 V 0 0.0050 0 20 40 60 80 0 100 12 24 36 48 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 2.0 10 ID = 10 A 8 ID = 20 A 6 VDS = 20 V VDS = 60 V 4 VGS = 10 V 1.7 VDS = 40 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 60 1.4 VGS = 4.5 V 1.1 0.8 2 0.5 0 0 8 16 24 32 Qg - Total Gate Charge (nC) Gate Charge 40 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 IRFR3607TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.050 TJ = 25 °C 1 0.1 0.01 0.030 0.020 TJ = 125 °C 0.010 0.001 TJ = 25 °C 0.000 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 Source-Drain Diode Forward Voltage 0.5 500 0.2 400 - 0.1 300 ID = 5 mA - 0.4 - 0.7 - 1.0 - 25 0 25 50 10 200 100 ID = 250 μA - 50 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Power (W) VGS(th) Variance (V) ID = 20 A 0.040 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) Threshold Voltage 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient 1000 IDM Limited ID - Drain Current (A) 100 100 μs ID Limited 10 1 ms 1 10 ms Limited by RDS(on)* 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.01 1s 10 s DC BVDSS Limited 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient 4 服务热线：400-655-8788 IRFR3607TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 75 ID - Drain Current (A) 60 Package Limited 45 30 15 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 75 2.5 60 2.0 Power (W) Power (W) Current Derating* 45 1.5 30 1.0 15 0.5 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient      * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 IRFR3607TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 0.01 4. Surface Mounted 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.01 0.0001 0.05 0.02 Single Pulse 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 6 IRFR3607TRPBF www.VBsemi.com TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. 服务热线：400-655-8788 7 IRFR3607TRPBF www.VBsemi.com RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 8 IRFR3607TRPBF www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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