0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MOT13003D

MOT13003D

  • 厂商:

    MOT(仁懋)

  • 封装:

    TO252

  • 描述:

    集电极-基极反向击穿电压700V,集电极-发射极反向击穿电压400V,放大系数10-40,集电极电流IC1.5A

  • 数据手册
  • 价格&库存
MOT13003D 数据手册
MOT MOT13003C/MOT13003D NPN SILICON TRANSISTOR Symbol „ PRODUCT CHARACTERISTICS BVCBO 700V BVCEO 400V 10-40 HFE@5V1A 1.5A IC  FEATURES * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tc = 290ns @ 1A, 100°C. * 700V blocking capability  APPLICATIONS MO T1 30 03 c d 03 30 T1 MO * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits TO-251 TO-252 „ ORDER INFORMATION Order codes Package Packing Halogen-Free Halogen N/A MOT13003C TO-251 70 pieces/Tube N/A MOT13003D TO-252 2500 pieces /Reel  ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage (VBE=0) Collector-Base Voltage Emitter Base Voltage Collector Current Base Current Emitter Current SYMBOL VCEO(SUS) VCES VCBO VEBO IC ICM IB IBM IE IEM Continuous Peak (1) Continuous Peak (1) Continuous Peak (1) TO-251/TO-252 RATINGS 400 700 700 9 1.5 3 0.75 1.5 2.25 4.5 1.56 UNIT V V V V PD Total Power Dissipation TA=25°C TC=25°C TO-251/TO-252 25 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. -1- A A A W W °C °C MOT MOT13003C/MOT13003D NPN SILICON TRANSISTOR „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS (Note) Collector-Emitter Sustaining Voltage Collector Cutoff Current SYMBOL TC=25°C TC=100°C Emitter Cutoff Current SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with base reverse biased ON CHARACTERISTICS (Note) VCEO(SUS) IC=10 mA , IB=0 VCEO=Rated Value, ICEO VBE(OFF)=1.5 V IEBO VEB=9 V, IC=0 400 V 1 5 1 See Fig.5 RBSOA See Fig.6 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product Output Capacitance SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time Fall Time Inductive Load, Clamped (Table 1) Storage Time Crossover Time Fall Time Note: Pulse Test : PW=300μ MIN TYP MAX UNIT Is/b hFE1 hFE2 DC Current Gain TEST CONDITIONS fT COB IC=0.4A, VCE=5V IC=1A, VCE=5V IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.2A, IB=0.4A IC=1A, IB=0.25A, TC=100°C IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1A, IB=0.25A, TC=100°C 14 5 IC=100mA, VCE=10V, f=1MHz VCB=10V, IE=0, f=0.1MHz 4 32 30 0.5 1 3 1 1 1.2 1.1 10 21 mA mA V V MHz pF tD tR tS tF VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25μs, Duty Cycle≤1% 0.05 0.1 0.5 1 2 4 0.4 0.7 μs μs μs μs tSTG tC tF IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C 1.7 4 0.29 0.75 0.15 μs μs μs ≤2% -2- MOT MOT13003C/MOT13003D NPN SILICON TRANSISTOR  TY PICAL CHARACTERISTICS DC Current Gain Collector Saturation Region 2 DC Current Gain, hFE 60 Collector-Emitter Voltage, VCE(V) 80 TJ=150℃ 40 25℃ 30 20 -55℃ 1 0 8 VCE=2V - - - - - -VCE=5V 6 4 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 TJ=25℃ 1.6 Ic=0.1A 0.3A 0.5A 1.2 0.4 0 0.002 0.005 0.01 Base-Emitter Voltage 0.05 0.1 0.2 0.5 1 2 Collector-Emitter Saturation Region 0.35 VBE(SAT) @ IC/IB=3 - - - - - -VBE(ON) @ VCE=2V 1.2 0.3 0.25 1 Voltage, V(V) Voltage, V(V) 0.02 Base Current, IB (A) 1.4 TJ=-55℃ 25℃ 0.8 25℃ 0.6 0.05 0.07 0.1 0.2 0.3 TJ=-55℃ 0.2 25℃ 0.15 0.1 150℃ 150℃ 0.02 0.03 Ic/IB=3 0.05 0.5 0.7 1 0 0.02 0.03 2 0.05 0.07 0.1 Collector Current,IC (A) Collector cut-off Region 4 Capacitance, C (pF) TJ=150℃ 125℃ 100℃ 1 0 2 TJ=25℃ 300 10 10 1 Capacitance VCE=250V 10 0.5 0.7 0.3 500 3 2 0.2 Collector Current, IC (A) 10 Collector Current, IC (μA) 1.5A 0.8 Collector Current,IC (A) 0.4 1A 75℃ 50℃ Cib 200 100 70 50 30 20 10 -1 10 -0.4 7 5 FORWARD REVERSE -0.2 Cob 10 25℃ 0 +0.2 +0.4 0.1 0.2 0.5 +0.6 Base-Emitter Voltage, VBE (V) 1 2 5 10 20 50 100 200 500 Reverse Voltage, VR (V) -3w 1000 MOT MOT13003C/MOT13003D NPN SILICON TRANSISTOR  TY PICAL CHARACTERISTICS(Cont.) -4- MOT MOT13003C/MOT13003D NPN SILICON TRANSISTOR n TO-252-2L PACKAGE OUTLINE DIMENSIONS -5- MOT MOT13003C/MOT13003D NPN SILICON TRANSISTOR n TO-251-3L PACKAGE OUTLINE DIMENSIONS -6-
MOT13003D 价格&库存

很抱歉,暂时无法提供与“MOT13003D”相匹配的价格&库存,您可以联系我们找货

免费人工找货