OSG65R360DEF

OSG65R360DEF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS® E series is optimized for its switching characteristics to achieve balance between EMI and efficiency. It is designed to enable power supply systems to reach the highest efficiency while still meeting EMI standards. Features  Low RDS(ON) & FOM  Extremely low switching loss  Excellent stability and uniformity  EMI and performance balanced Applications  LED lighting  Charger  Adapter  TV power  Telecom power  Server power  Solar/UPS Key Performance Parameters Parameter Value Unit VDS, min @ Tj(max) 700 V ID, pulse 36 A RDS(ON), max @ VGS=10V 360 mΩ Qg 18.8 nC Product Name Package Marking OSG65R360DEF TO252 OSG65R360DE Marking Information Package & Pin Information Oriental Semiconductor © Copyright Reserved V2.0 Page.1 OSG65R360DEF Enhancement Mode N-Channel Power MOSFET Absolute Maximum Ratings at Tj=25°C unless otherwise noted Parameter Symbol Value Unit Drain-source voltage VDS 650 V Gate-source voltage VGS ±30 V Continuous drain current1), TC=25 °C 12 ID Continuous drain current1), TC=100 °C A 7.6 Pulsed drain current2), TC=25 °C ID, pulse 36 A IS 12 A IS, pulse 36 A Power dissipation3), TC=25 °C PD 83 W Single pulsed avalanche energy 5) EAS 216 mJ MOSFET dv/dt ruggedness, VDS=0…480 V dv/dt 50 V/ns Reverse diode dv/dt, VDS=0…480 V, ISD≤ID dv/dt 15 V/ns Tstg, Tj -55 to 150 °C Symbol Value Unit Thermal resistance, junction-case RθJC 1.51 °C/W Thermal resistance, junction-ambient4) RθJA 62 °C/W Continuous diode forward current 1), TC=25 °C Diode pulsed current2), TC=25 °C Operation and storage temperature Thermal Characteristics Parameter Electrical Characteristics at Tj=25°C unless otherwise specified Parameter Symbol Drain-source breakdown voltage BVDSS Gate threshold voltage VGS(th) Drain-source on-state resistance RDS(ON) Min. Typ. Max. Unit VGS=0 V, ID=250 μA 650 V VGS=0 V, ID=250 μA, Tj=150 °C V VDS=VGS, ID=250 μA 700 2.9 3.9 0.30 0.36 VGS=10 V, ID=3 A Ω 0.77 100 Gate-source leakage current IGSS Drain-source leakage current IDSS Gate resistance RG VGS=10 V, ID=3 A, Tj=150 °C VGS=30 V nA -100 Oriental Semiconductor © Copyright Reserved V2.0 Test condition 1 30 VGS=-30 V μA VDS=650 V, VGS=0 V Ω ƒ=1 MHz, Open drain Page.2 OSG65R360DEF Enhancement Mode N-Channel Power MOSFET Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Input capacitance Ciss 901 pF Output capacitance Coss 52 pF Reverse transfer capacitance Crss 0.9 pF Co(er) 31.2 pF Co(tr) 160 pF td(on) 30.4 ns tr 24.8 ns td(off) 59.6 ns tf 15 ns Effective output capacitance, energy related Effective output capacitance, time related Turn-on delay time Rise time Turn-off delay time Fall time Test condition VGS=0 V, VDS=50 V, ƒ=100 kHz VGS=0 V, VDS=0 V- 400 V VGS=10 V, VDS=400 V, RG=2 Ω, ID=8 A Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Total gate charge Qg 18.7 nC Gate-source charge Qgs 6.4 nC Gate-drain charge Qgd 5.7 nC Vplateau 6.4 V Gate plateau voltage Test condition VGS=10 V, VDS=400 V, ID=8 A Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit 1.3 V Diode forward voltage VSD Reverse recovery time trr 257 ns Reverse recovery charge Qrr 2.6 μC Peak reverse recovery current Irrm 18 A Test condition IS=12 A, VGS=0 V VR=400 V, IS=8 A, di/dt=100 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in square FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C. 5) VDD=100 V, VGS=10 V, L=75 mH, starting Tj=25 °C. Oriental Semiconductor © Copyright Reserved V2.0 Page.3 OSG65R360DEF Enhancement Mode N-Channel Power MOSFET Electrical Characteristics Diagrams 20 100 Tj = 25 ℃ VDS= 10 V VGS= 10 V Tj = 25 ℃ ID, Drain current (A) ID, Drain current(A) VGS= 6.5 V 15 10 10 VGS= 6 V 5 1 VGS= 5.5 V VGS= 5 V 0 0 2 4 6 VDS,Drain-source voltage (V) 8 0.1 2 10 Figure 1. Typ. output characteristics C, Capacitance (pF) 10 f = 100 kHz Ciss 3 6 7 8 9 10 VDS = 400 V 8 10 5 ID = 8 A VGS = 0 V VGS, Gate-source voltage(V) 4 10 4 VGS, Gate-source voltage(V) Figure 2. Typ. transfer characteristics 5 10 3 6 2 10 Coss 1 10 Crss 0 10 4 2 -1 0 10 100 200 300 400 500 0 600 5 VDS, Drain-source voltage (V) Figure 3. Typ. capacitances 20 0.8 ID = 250 μA 0.7 VGS = 0 V RDS(ON), On-resistance(Ω) BVDSS, Drain-source breakdown voltage (V) 15 Figure 4. Typ. gate charge 800 775 10 Qg, Gate charge(nC) 750 725 700 675 650 ID =3 A VGS = 10 V 0.6 0.5 0.4 0.3 0.2 625 -50 0 50 100 150 Tj, Junction temperature (℃) Figure 5. Drain-source breakdown voltage Oriental Semiconductor © Copyright Reserved V2.0 0.1 -50 0 50 100 Tj, Junction temperature (℃) 150 Figure 6. Drain-source on-state resistance Page.4 OSG65R360DEF Enhancement Mode N-Channel Power MOSFET 1000 4.5 Tj = 25 ℃ 4.0 100 IS, Source current (A) Vth, Threshold voltage (V) ID = 250 μA 3.5 3.0 10 1 2.5 0.1 2.0 -50 0 50 100 Tj, Junction temperature (℃) 0.4 150 0.8 1.2 1.6 2.0 VSD, Source-drain voltage (V) Figure 7. Threshold voltage Figure 8. Forward characteristic of body diode 1.5 14 VGS=5.5 V 0.9 10 6.5 V 6V ID, Drain current (A) RDS(ON), On-resistance(Ω) 12 1.2 7 V 10 V 0.6 8 6 4 0.3 2 0.0 0 5 10 15 20 25 0 25 50 75 100 125 150 TC, Case temperature (℃) ID, Drain current(A) Figure 9. Drain-source on-state resistance 5µ Figure 10. Drain current 100 4µ ID, Drain current(A) 10 Eoss(J) 3µ 2µ 10 μs 1 RDS(ON) Limited 100 μs 1 ms 10 ms DC 0.1 1µ 0.01 0 0 100 200 300 400 500 600 VDS, Drain-source voltage (V) Figure 11. Typ. Coss stored energy Oriental Semiconductor © Copyright Reserved V2.0 0.1 1 10 100 VDS, Drain-source voltage(V) 1000 Figure 12. Safe operation area T C=25 °C Page.5 OSG65R360DEF Enhancement Mode N-Channel Power MOSFET zthjc, Thermal Response(K/W) 101 D= tp/T 100 10-1 10-5 D= 1 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 10-4 10-3 10-2 tp, Pulse width(s) 10-1 100 Figure 13. Max. transient thermal impedance Oriental Semiconductor © Copyright Reserved V2.0 Page.6 OSG65R360DEF Enhancement Mode N-Channel Power MOSFET Test circuits and waveforms Figure 1. Gate charge test circuit & waveform Figure 2. Switching time test circuit & waveforms Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms Figure 4. Diode reverse recovery test circuit & waveforms Oriental Semiconductor © Copyright Reserved V2.0 Page.7 OSG65R360DEF Enhancement Mode N-Channel Power MOSFET Package Information E c2 D1 L6 L3 θ1 b3 H θ1 L1 θ1 b2 L4 L5 1 RK 0. A ± M 30 E- 1. D p Φ To E1 A2 e b θ2 C L A1 θ A L2 C (L 1 ) Symbol A A1 A2 b b1 b2 b3 c c1 c2 D D1 E E1 e H L L1 L2 L3 L4 L5 L6 θ θ1 θ2 Min 2.20 0.00 0.90 0.72 0.71 0.72 5.13 0.47 0.46 0.47 6.00 5.25 6.50 4.70 2.186 9.80 1.40 0.90 0.60 0.15 0˚ 5˚ 5˚ mm Nom 2.30 1.01 0.76 5.33 0.51 6.10 6.60 2.286 10.10 1.50 2.90 REF 0.508 BSC 0.80 1.80 REF 7˚ 7˚ Max 2.38 0.10 1.10 0.85 0.81 0.90 5.46 0.60 0.56 0.60 6.20 6.70 2.386 10.40 1.70 1.25 1.00 0.75 8˚ 9˚ 9˚ Version 1: TO252-J package outline dimension Oriental Semiconductor © Copyright Reserved V2.0 Page.8 OSG65R360DEF Enhancement Mode N-Channel Power MOSFET Package Information Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 θ Min 2.20 0.00 0.97 0.68 5.20 0.43 5.98 6.40 4.63 9.40 1.38 0.88 0.50 0˚ mm Nom 2.30 1.07 0.78 5.33 0.53 6.10 5.30 REF 6.60 2.286 BSC 10.10 1.50 2.90 REF 0.51 BSC - Max 2.38 0.20 1.17 0.90 5.46 0.61 6.22 6.73 10.50 1.75 1.28 1.00 8˚ Version 2: TO252-P package outline dimension Oriental Semiconductor © Copyright Reserved V2.0 Page.9 OSG65R360DEF Enhancement Mode N-Channel Power MOSFET Ordering Information Package Type Units/ Reel Reels/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box TO252-J 2500 2 5000 5 25000 TO252-P 2500 2 5000 5 25000 Product Information Product Package Pb Free RoHS Halogen Free OSG65R360DEF TO252 yes yes yes Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. For further information on technology, delivery terms and conditions and prices, please contact the Oriental Semiconductor sales representatives (www.orientalsemi.com). © Oriental Semiconductor Co.,Ltd. All Rights Reserved Oriental Semiconductor © Copyright Reserved V2.0 Page.10